Inventor
MENG SHUANG
US44 patents
⚠️ This page may combine multiple inventors who share the name “MENG SHUANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
23 patentsUS7838084B2Nov 23, 2010
Atomic layer deposition method of depositing an oxide on a substrate
MICRON TECHNOLOGY INC528 citations99
US7431966B2Oct 7, 2008
Atomic layer deposition method of depositing an oxide on a substrate
MICRON TECHNOLOGY INC538 citations99
US6967154B2Nov 22, 2005
Enhanced atomic layer deposition
MICRON TECHNOLOGY INC106 citations99
US7390746B2Jun 24, 2008
Multiple deposition for integration of spacers in pitch multiplication process
MICRON TECHNOLOGY INC67 citations98
US7253118B2Aug 7, 2007
Pitch reduced patterns relative to photolithography features
MICRON TECHNOLOGY INC161 citations98
US6844260B2Jan 18, 2005
Insitu post atomic layer deposition destruction of active species
MICRON TECHNOLOGY INC104 citations98
US7651951B2Jan 26, 2010
Pitch reduced patterns relative to photolithography features
MICRON TECHNOLOGY INC46 citations96
US7279732B2Oct 9, 2007
Enhanced atomic layer deposition
MICRON TECHNOLOGY INC58 citations96
US7410898B2Aug 12, 2008
Methods of fabricating interconnects for semiconductor components
MICRON TECHNOLOGY INC12 citations93
US7071098B2Jul 4, 2006
Methods of fabricating interconnects for semiconductor components including a through hole entirely through the component and forming a metal nitride including separate precursor cycles
MICRON TECHNOLOGY INC20 citations93
US6943106B1Sep 13, 2005
Methods of fabricating interconnects for semiconductor components including plating solder-wetting material and solder filling
MICRON TECHNOLOGY INC22 citations93
US10607844B2Mar 31, 2020
Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
MICRON TECHNOLOGY INC4 citations84
US10096483B2Oct 9, 2018
Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
MICRON TECHNOLOGY INC6 citations84
US9761457B2Sep 12, 2017
Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
MICRON TECHNOLOGY INC7 citations84
US7723767B2May 25, 2010
High dielectric constant transition metal oxide materials
MICRON TECHNOLOGY INC8 citations84
US7172947B2Feb 6, 2007
High dielectric constant transition metal oxide materials
MICRON TECHNOLOGY INC11 citations84
US9305782B2Apr 5, 2016
Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
MICRON TECHNOLOGY INC3 citations82
US7189642B2Mar 13, 2007
Methods of fabricating interconnects including depositing a first material in the interconnect with a thickness of angstroms and a low temperature for semiconductor components
MICRON TECHNOLOGY INC6 citations74
US7119034B2Oct 10, 2006
Atomic layer deposition method of forming an oxide comprising layer on a substrate
MICRON TECHNOLOGY INC5 citations74
US7067438B2Jun 27, 2006
Atomic layer deposition method of forming an oxide comprising layer on a substrate
MICRON TECHNOLOGY INC5 citations74
US7329615B2Feb 12, 2008
Atomic layer deposition method of forming an oxide comprising layer on a substrate
MICRON TECHNOLOGY INC3 citations63
US7282239B2Oct 16, 2007
Systems and methods for depositing material onto microfeature workpieces in reaction chambers
MICRON TECHNOLOGY INC6 citations63
US11335563B2May 17, 2022
Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
MICRON TECHNOLOGY INC0 citations62
ROUND ROCK RES LLC
5 patentsUS8048812B2Nov 1, 2011
Pitch reduced patterns relative to photolithography features
ROUND ROCK RES LLC11 citations92
US7884022B2Feb 8, 2011
Multiple deposition for integration of spacers in pitch multiplication process
ROUND ROCK RES LLC20 citations92
US7718540B2May 18, 2010
Pitch reduced patterns relative to photolithography features
ROUND ROCK RES LLC22 citations92
US7872291B2Jan 18, 2011
Enhanced atomic layer deposition
ROUND ROCK RES LLC4 citations74
US8362576B2Jan 29, 2013
Transistor with reduced depletion field width
ROUND ROCK RES LLC2 citations63
TRAN LUAN
3 patentsUS8598632B2Dec 3, 2013
Integrated circuit having pitch reduced patterns relative to photoithography features
TRAN LUAN10 citations92
US8207576B2Jun 26, 2012
Pitch reduced patterns relative to photolithography features
TRAN LUAN18 citations92
US8119535B2Feb 21, 2012
Pitch reduced patterns relative to photolithography features
TRAN LUAN8 citations83
ENTEGRIS INC
3 patentsUS11560625B2Jan 24, 2023
Vapor deposition of molybdenum using a bis(alkyl-arene) molybdenum precursor
ENTEGRIS INC0 citations62
US11107675B2Aug 31, 2021
CVD Mo deposition by using MoOCl4
ENTEGRIS INC0 citations59
US10453744B2Oct 22, 2019
Low temperature molybdenum film deposition utilizing boron nucleation layers
ENTEGRIS INC1 citations54
MATTSON TECH INC
2 patentsLODESTAR LICENSING GROUP LLC
2 patentsUS12463044B2Nov 4, 2025
Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
LODESTAR LICENSING GROUP LLC0 citations62
US11935756B2Mar 19, 2024
Pitch reduction technology using alternating spacer depositions during the formation of a semiconductor device and systems including same
LODESTAR LICENSING GROUP LLC0 citations62