P

Inventor

OHSAWA TAKASHI

JP177 patents
⚠️ This page may combine multiple inventors who share the name “OHSAWA TAKASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TOSHIBA KK

47 patents
US7609551B2Oct 27, 2009

Semiconductor memory device

TOSHIBA KK255 citations99
US6825524B1Nov 30, 2004

Semiconductor integrated circuit device

TOSHIBA KK181 citations99
US6650565B1Nov 18, 2003

Semiconductor memory device

TOSHIBA KK154 citations99
US6621725B2Sep 16, 2003

Semiconductor memory device with floating storage bulk region and method of manufacturing the same

TOSHIBA KK240 citations99
US6617651B2Sep 9, 2003

Semiconductor memory device

TOSHIBA KK276 citations99
US6567330B2May 20, 2003

Semiconductor memory device

TOSHIBA KK252 citations99
US6548848B2Apr 15, 2003

Semiconductor memory device

TOSHIBA KK260 citations99
US6538916B2Mar 25, 2003

Semiconductor memory device

TOSHIBA KK411 citations99
US6351426B1Feb 26, 2002

DRAM having a power supply voltage lowering circuit

TOSHIBA KK216 citations99
US6891225B2May 10, 2005

Dynamic semiconductor memory device

TOSHIBA KK83 citations98
US6778424B2Aug 17, 2004

Semiconductor memory device and method of manufacturing the same

TOSHIBA KK80 citations98
US6632723B2Oct 14, 2003

Semiconductor device

TOSHIBA KK191 citations98
US6292424B1Sep 18, 2001

DRAM having a power supply voltage lowering circuit

TOSHIBA KK151 citations98
US6882008B1Apr 19, 2005

Semiconductor integrated circuit device

TOSHIBA KK58 citations96
US6687152B2Feb 3, 2004

Semiconductor memory device

TOSHIBA KK56 citations96
US5917764AJun 29, 1999

Semiconductor memory device

TOSHIBA KK71 citations96
US5828611AOct 27, 1998

Semiconductor memory device having internal voltage booster circuit coupled to bit line charging/equalizing circuit

TOSHIBA KK47 citations96
US5751639AMay 12, 1998

DRAM having a power supply voltage lowering circuit

TOSHIBA KK71 citations96
US5592421AJan 7, 1997

Semiconductor integrated circuit for generating an internal power source voltage with reduced potential changes

TOSHIBA KK57 citations96
US5381373AJan 10, 1995

Voltage stress test circuit for a DRAM

TOSHIBA KK60 citations96
US4943745AJul 24, 1990

Delay circuit for semiconductor integrated circuit devices

TOSHIBA KK76 citations96
US4748627AMay 31, 1988

Semiconductor memory device with an error correction function

TOSHIBA KK56 citations96
US7257015B2Aug 14, 2007

Semiconductor memory device having a floating storage bulk region

TOSHIBA KK17 citations93
US7123509B2Oct 17, 2006

Floating body cell memory and reading and writing circuit thereof

TOSHIBA KK20 citations93
US7027334B2Apr 11, 2006

Semiconductor memory device

TOSHIBA KK48 citations93
US7023054B2Apr 4, 2006

Semiconductor storage device and semiconductor integrated circuit

TOSHIBA KK20 citations93
US6781875B2Aug 24, 2004

Semiconductor memory device and semiconductor device

TOSHIBA KK21 citations93
US6771546B2Aug 3, 2004

Semiconductor memory device and method of controlling the same

TOSHIBA KK25 citations93
US6075746AJun 13, 2000

DRAM device with function of producing wordline drive signal based on stored charge in capacitor

TOSHIBA KK24 citations93
US6069828AMay 30, 2000

Semiconductor memory device having voltage booster circuit

TOSHIBA KK22 citations93
US5970016AOct 19, 1999

Dynamic semiconductor memory device with banks capable of operating independently

TOSHIBA KK34 citations93
US5870340AFeb 9, 1999

Multiplexer

TOSHIBA KK18 citations93
US5761109AJun 2, 1998

Semiconductor memory device having folded bit line array and an open bit line array with imbalance correction

TOSHIBA KK46 citations93
US5701095ADec 23, 1997

High speed, low noise CMOS multiplexer with precharge

TOSHIBA KK36 citations93
US5689461ANov 18, 1997

Semiconductor memory device having voltage booster circuit coupled to a bit line charging/equalizing circuit or switch

TOSHIBA KK30 citations93
US5528129AJun 18, 1996

Semiconductor integrated circuit for generating constant internal voltage

TOSHIBA KK20 citations93
US5517450AMay 14, 1996

Semiconductor memory device with redundancy circuit

TOSHIBA KK25 citations93
US5424990AJun 13, 1995

Semiconductor memory having built-in voltage stress test mode

TOSHIBA KK40 citations93
US5416741AMay 16, 1995

Semiconductor memory with built-in parallel bit test mode

TOSHIBA KK30 citations93
US5398207AMar 14, 1995

MOS random access memory device with an internal voltage-down converting transistor

TOSHIBA KK48 citations93
US5373472ADec 13, 1994

Semiconductor memory apparatus

TOSHIBA KK28 citations93
US5220527AJun 15, 1993

Dynamic type semiconductor memory device

TOSHIBA KK26 citations93
US5166558ANov 24, 1992

Cmos ecl/ttl output circuit

TOSHIBA KK34 citations93
US5091885AFeb 25, 1992

Dynamic type random-access memory having improved timing characteristics

TOSHIBA KK28 citations93
US5019729AMay 28, 1991

TTL to CMOS buffer circuit

TOSHIBA KK39 citations93
US4906914AMar 6, 1990

Intermediate potential generation circuit for generating a potential intermediate between a power source potential and ground potential

TOSHIBA KK31 citations93
US7977738B2Jul 12, 2011

Semiconductor memory device and manufacturing method thereof

TOSHIBA KK31 citations92

MITSUBISHI ELECTRIC CORP

2 patents

TANABE SEIYAKU CO

1 patent

Showing the top 50 of 177 patents by PatentIndex Score.