Inventor
OHSAWA TAKASHI
JP177 patents
⚠️ This page may combine multiple inventors who share the name “OHSAWA TAKASHI”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TOSHIBA KK
47 patentsUS7609551B2Oct 27, 2009
Semiconductor memory device
TOSHIBA KK255 citations99
US6825524B1Nov 30, 2004
Semiconductor integrated circuit device
TOSHIBA KK181 citations99
US6650565B1Nov 18, 2003
Semiconductor memory device
TOSHIBA KK154 citations99
US6621725B2Sep 16, 2003
Semiconductor memory device with floating storage bulk region and method of manufacturing the same
TOSHIBA KK240 citations99
US6617651B2Sep 9, 2003
Semiconductor memory device
TOSHIBA KK276 citations99
US6567330B2May 20, 2003
Semiconductor memory device
TOSHIBA KK252 citations99
US6548848B2Apr 15, 2003
Semiconductor memory device
TOSHIBA KK260 citations99
US6538916B2Mar 25, 2003
Semiconductor memory device
TOSHIBA KK411 citations99
US6351426B1Feb 26, 2002
DRAM having a power supply voltage lowering circuit
TOSHIBA KK216 citations99
US6891225B2May 10, 2005
Dynamic semiconductor memory device
TOSHIBA KK83 citations98
US6778424B2Aug 17, 2004
Semiconductor memory device and method of manufacturing the same
TOSHIBA KK80 citations98
US6632723B2Oct 14, 2003
Semiconductor device
TOSHIBA KK191 citations98
US6292424B1Sep 18, 2001
DRAM having a power supply voltage lowering circuit
TOSHIBA KK151 citations98
US6882008B1Apr 19, 2005
Semiconductor integrated circuit device
TOSHIBA KK58 citations96
US6687152B2Feb 3, 2004
Semiconductor memory device
TOSHIBA KK56 citations96
US5917764AJun 29, 1999
Semiconductor memory device
TOSHIBA KK71 citations96
US5828611AOct 27, 1998
Semiconductor memory device having internal voltage booster circuit coupled to bit line charging/equalizing circuit
TOSHIBA KK47 citations96
US5751639AMay 12, 1998
DRAM having a power supply voltage lowering circuit
TOSHIBA KK71 citations96
US5592421AJan 7, 1997
Semiconductor integrated circuit for generating an internal power source voltage with reduced potential changes
TOSHIBA KK57 citations96
US5381373AJan 10, 1995
Voltage stress test circuit for a DRAM
TOSHIBA KK60 citations96
US4943745AJul 24, 1990
Delay circuit for semiconductor integrated circuit devices
TOSHIBA KK76 citations96
US4748627AMay 31, 1988
Semiconductor memory device with an error correction function
TOSHIBA KK56 citations96
US7257015B2Aug 14, 2007
Semiconductor memory device having a floating storage bulk region
TOSHIBA KK17 citations93
US7123509B2Oct 17, 2006
Floating body cell memory and reading and writing circuit thereof
TOSHIBA KK20 citations93
US7027334B2Apr 11, 2006
Semiconductor memory device
TOSHIBA KK48 citations93
US7023054B2Apr 4, 2006
Semiconductor storage device and semiconductor integrated circuit
TOSHIBA KK20 citations93
US6781875B2Aug 24, 2004
Semiconductor memory device and semiconductor device
TOSHIBA KK21 citations93
US6771546B2Aug 3, 2004
Semiconductor memory device and method of controlling the same
TOSHIBA KK25 citations93
US6075746AJun 13, 2000
DRAM device with function of producing wordline drive signal based on stored charge in capacitor
TOSHIBA KK24 citations93
US6069828AMay 30, 2000
Semiconductor memory device having voltage booster circuit
TOSHIBA KK22 citations93
US5970016AOct 19, 1999
Dynamic semiconductor memory device with banks capable of operating independently
TOSHIBA KK34 citations93
US5870340AFeb 9, 1999
Multiplexer
TOSHIBA KK18 citations93
US5761109AJun 2, 1998
Semiconductor memory device having folded bit line array and an open bit line array with imbalance correction
TOSHIBA KK46 citations93
US5701095ADec 23, 1997
High speed, low noise CMOS multiplexer with precharge
TOSHIBA KK36 citations93
US5689461ANov 18, 1997
Semiconductor memory device having voltage booster circuit coupled to a bit line charging/equalizing circuit or switch
TOSHIBA KK30 citations93
US5528129AJun 18, 1996
Semiconductor integrated circuit for generating constant internal voltage
TOSHIBA KK20 citations93
US5517450AMay 14, 1996
Semiconductor memory device with redundancy circuit
TOSHIBA KK25 citations93
US5424990AJun 13, 1995
Semiconductor memory having built-in voltage stress test mode
TOSHIBA KK40 citations93
US5416741AMay 16, 1995
Semiconductor memory with built-in parallel bit test mode
TOSHIBA KK30 citations93
US5398207AMar 14, 1995
MOS random access memory device with an internal voltage-down converting transistor
TOSHIBA KK48 citations93
US5373472ADec 13, 1994
Semiconductor memory apparatus
TOSHIBA KK28 citations93
US5220527AJun 15, 1993
Dynamic type semiconductor memory device
TOSHIBA KK26 citations93
US5166558ANov 24, 1992
Cmos ecl/ttl output circuit
TOSHIBA KK34 citations93
US5091885AFeb 25, 1992
Dynamic type random-access memory having improved timing characteristics
TOSHIBA KK28 citations93
US5019729AMay 28, 1991
TTL to CMOS buffer circuit
TOSHIBA KK39 citations93
US4906914AMar 6, 1990
Intermediate potential generation circuit for generating a potential intermediate between a power source potential and ground potential
TOSHIBA KK31 citations93
US7977738B2Jul 12, 2011
Semiconductor memory device and manufacturing method thereof
TOSHIBA KK31 citations92
MITSUBISHI ELECTRIC CORP
2 patentsTANABE SEIYAKU CO
1 patentShowing the top 50 of 177 patents by PatentIndex Score.