P

Inventor

GRIEBL ERICH

DE28 patents
⚠️ This page may combine multiple inventors who share the name “GRIEBL ERICH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

INFINEON TECHNOLOGIES AG

16 patents
US7112868B2Sep 26, 2006

IGBT with monolithic integrated antiparallel diode

INFINEON TECHNOLOGIES AG26 citations92
USD609191SFeb 2, 2010

Package for electronic device

INFINEON TECHNOLOGIES AG17 citations91
US6714397B2Mar 30, 2004

Protection configuration for schottky diode

INFINEON TECHNOLOGIES AG7 citations74
US10304952B2May 28, 2019

Power semiconductor device with dV/dt controllability and cross-trench arrangement

INFINEON TECHNOLOGIES AG2 citations72
US9666663B2May 30, 2017

Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor device

INFINEON TECHNOLOGIES AG5 citations70
US11610986B2Mar 21, 2023

Power semiconductor switch having a cross-trench structure

INFINEON TECHNOLOGIES AG0 citations62
US11515264B2Nov 29, 2022

Method for processing a semiconductor wafer, semiconductor composite structure and support structure for semiconductor wafer

INFINEON TECHNOLOGIES AG0 citations62
US11075290B2Jul 27, 2021

Power semiconductor device having a cross-trench arrangement

INFINEON TECHNOLOGIES AG0 citations62
US9997359B2Jun 12, 2018

Semiconductor device with rear-side insert structure

INFINEON TECHNOLOGIES AG0 citations52
US9640401B2May 2, 2017

Method of manufacturing a semiconductor device having a rear-side insert structure

INFINEON TECHNOLOGIES AG0 citations52
US9385222B2Jul 5, 2016

Semiconductor device with insert structure at a rear side and method of manufacturing

INFINEON TECHNOLOGIES AG0 citations52
US9224806B2Dec 29, 2015

Edge termination structure with trench isolation regions

INFINEON TECHNOLOGIES AG1 citations52
US7821141B2Oct 26, 2010

Semiconductor device

INFINEON TECHNOLOGIES AG1 citations51
US10629676B2Apr 21, 2020

Semiconductor device with cell trench structures and recessed contacts and method of manufacturing a semiconductor device

INFINEON TECHNOLOGIES AG0 citations49
US9406572B2Aug 2, 2016

Method for processing a substrate and a method of process screening for integrated circuits

INFINEON TECHNOLOGIES AG0 citations48
US10424645B2Sep 24, 2019

Semiconductor device, method for testing a semiconductor device and method for forming a semiconductor device

INFINEON TECHNOLOGIES AG0 citations41

INFINEON TECH DRESDEN GMBH & CO KG

5 patents

INFINEON TECHNOLOGIES AUSTRIA AG

4 patents

OTREMBA RALF

2 patents

INFINEON TECHNOLOGIES AUSTRIA

1 patent