Inventor
GRIEBL ERICH
DE28 patents
⚠️ This page may combine multiple inventors who share the name “GRIEBL ERICH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
INFINEON TECHNOLOGIES AG
16 patentsUS7112868B2Sep 26, 2006
IGBT with monolithic integrated antiparallel diode
INFINEON TECHNOLOGIES AG26 citations92
USD609191SFeb 2, 2010
Package for electronic device
INFINEON TECHNOLOGIES AG17 citations91
US6714397B2Mar 30, 2004
Protection configuration for schottky diode
INFINEON TECHNOLOGIES AG7 citations74
US10304952B2May 28, 2019
Power semiconductor device with dV/dt controllability and cross-trench arrangement
INFINEON TECHNOLOGIES AG2 citations72
US9666663B2May 30, 2017
Semiconductor device with cell trench structures and contacts and method of manufacturing a semiconductor device
INFINEON TECHNOLOGIES AG5 citations70
US11610986B2Mar 21, 2023
Power semiconductor switch having a cross-trench structure
INFINEON TECHNOLOGIES AG0 citations62
US11515264B2Nov 29, 2022
Method for processing a semiconductor wafer, semiconductor composite structure and support structure for semiconductor wafer
INFINEON TECHNOLOGIES AG0 citations62
US11075290B2Jul 27, 2021
Power semiconductor device having a cross-trench arrangement
INFINEON TECHNOLOGIES AG0 citations62
US9997359B2Jun 12, 2018
Semiconductor device with rear-side insert structure
INFINEON TECHNOLOGIES AG0 citations52
US9640401B2May 2, 2017
Method of manufacturing a semiconductor device having a rear-side insert structure
INFINEON TECHNOLOGIES AG0 citations52
US9385222B2Jul 5, 2016
Semiconductor device with insert structure at a rear side and method of manufacturing
INFINEON TECHNOLOGIES AG0 citations52
US9224806B2Dec 29, 2015
Edge termination structure with trench isolation regions
INFINEON TECHNOLOGIES AG1 citations52
US7821141B2Oct 26, 2010
Semiconductor device
INFINEON TECHNOLOGIES AG1 citations51
US10629676B2Apr 21, 2020
Semiconductor device with cell trench structures and recessed contacts and method of manufacturing a semiconductor device
INFINEON TECHNOLOGIES AG0 citations49
US9406572B2Aug 2, 2016
Method for processing a substrate and a method of process screening for integrated circuits
INFINEON TECHNOLOGIES AG0 citations48
US10424645B2Sep 24, 2019
Semiconductor device, method for testing a semiconductor device and method for forming a semiconductor device
INFINEON TECHNOLOGIES AG0 citations41
INFINEON TECH DRESDEN GMBH & CO KG
5 patentsUS11949006B2Apr 2, 2024
Power semiconductor device with p-contact and doped insulation blocks defining contact holes
INFINEON TECH DRESDEN GMBH & CO KG0 citations62
US11018051B2May 25, 2021
Power semiconductor device with reliably verifiable p-contact and method
INFINEON TECH DRESDEN GMBH & CO KG0 citations62
US11888061B2Jan 30, 2024
Power semiconductor device having elevated source regions and recessed body regions
INFINEON TECH DRESDEN GMBH & CO KG0 citations61
US11257946B2Feb 22, 2022
Method of forming a power semiconductor device
INFINEON TECH DRESDEN GMBH & CO KG0 citations61
US11011629B2May 18, 2021
Power semiconductor switch with improved controllability
INFINEON TECH DRESDEN GMBH & CO KG0 citations51
INFINEON TECHNOLOGIES AUSTRIA AG
4 patentsUS9825023B2Nov 21, 2017
Insulated gate bipolar transistor comprising negative temperature coefficient thermistor
INFINEON TECHNOLOGIES AUSTRIA AG6 citations71
US10600862B2Mar 24, 2020
High voltage termination structure of a power semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG1 citations62
US11469317B2Oct 11, 2022
Rc igbt
INFINEON TECHNOLOGIES AUSTRIA AG0 citations50
US10177248B2Jan 8, 2019
Semiconductor device
INFINEON TECHNOLOGIES AUSTRIA AG0 citations41