Inventor
BAKER TROY J
US17 patents
⚠️ This page may combine multiple inventors who share the name “BAKER TROY J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNIV CALIFORNIA
11 patentsUS7691658B2Apr 6, 2010
Method for improved growth of semipolar (Al,In,Ga,B)N
UNIV CALIFORNIA266 citations98
US7220324B2May 22, 2007
Technique for the growth of planar semi-polar gallium nitride
UNIV CALIFORNIA317 citations98
US7846757B2Dec 7, 2010
Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devices
UNIV CALIFORNIA33 citations95
US7704331B2Apr 27, 2010
Technique for the growth of planar semi-polar gallium nitride
UNIV CALIFORNIA14 citations92
US7687293B2Mar 30, 2010
Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition
UNIV CALIFORNIA17 citations92
US7575947B2Aug 18, 2009
Method for enhancing growth of semi-polar (Al,In,Ga,B)N via metalorganic chemical vapor deposition
UNIV CALIFORNIA20 citations92
US8368179B2Feb 5, 2013
Miscut semipolar optoelectronic device
UNIV CALIFORNIA5 citations84
US10529892B2Jan 7, 2020
Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices
UNIV CALIFORNIA0 citations51
US9793435B2Oct 17, 2017
Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices
UNIV CALIFORNIA0 citations51
US9231376B2Jan 5, 2016
Technique for the growth and fabrication of semipolar (Ga,Al,In,B)N thin films, heterostructures, and devices
UNIV CALIFORNIA0 citations51
US7795146B2Sep 14, 2010
Etching technique for the fabrication of thin (Al, In, Ga)N layers
UNIV CALIFORNIA0 citations41
BAKER TROY J
3 patentsUS8128756B2Mar 6, 2012
Technique for the growth of planar semi-polar gallium nitride
BAKER TROY J5 citations71
US8148244B2Apr 3, 2012
Lateral growth method for defect reduction of semipolar nitride films
BAKER TROY J5 citations61
US8524012B2Sep 3, 2013
Technique for the growth of planar semi-polar gallium nitride
BAKER TROY J2 citations60