Inventor
LU YONG
US212 patents
⚠️ This page may combine multiple inventors who share the name “LU YONG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SEAGATE TECHNOLOGY LLC
14 patentsUS7881095B2Feb 1, 2011
Asymmetric write current compensation using gate overdrive for resistive sense memory cells
SEAGATE TECHNOLOGY LLC70 citations98
US7876604B2Jan 25, 2011
Stram with self-reference read scheme
SEAGATE TECHNOLOGY LLC19 citations93
US7826255B2Nov 2, 2010
Variable write and read methods for resistive random access memory
SEAGATE TECHNOLOGY LLC16 citations93
US7755923B2Jul 13, 2010
Memory array with read reference voltage cells
SEAGATE TECHNOLOGY LLC14 citations93
US8040713B2Oct 18, 2011
Bit set modes for a resistive sense memory cell array
SEAGATE TECHNOLOGY LLC17 citations92
US7755965B2Jul 13, 2010
Temperature dependent system for reading ST-RAM
SEAGATE TECHNOLOGY LLC21 citations92
US7936592B2May 3, 2011
Non-volatile memory cell with precessional switching
SEAGATE TECHNOLOGY LLC18 citations91
US7830726B2Nov 9, 2010
Data storage using read-mask-write operation
SEAGATE TECHNOLOGY LLC13 citations89
US8054673B2Nov 8, 2011
Three dimensionally stacked non volatile memory units
SEAGATE TECHNOLOGY LLC7 citations84
US8009458B2Aug 30, 2011
Asymmetric write current compensation using gate overdrive for resistive sense memory cells
SEAGATE TECHNOLOGY LLC8 citations84
US8004872B2Aug 23, 2011
Floating source line architecture for non-volatile memory
SEAGATE TECHNOLOGY LLC7 citations84
US7935619B2May 3, 2011
Polarity dependent switch for resistive sense memory
SEAGATE TECHNOLOGY LLC9 citations84
US7936588B2May 3, 2011
Memory array with read reference voltage cells
SEAGATE TECHNOLOGY LLC9 citations84
US7881096B2Feb 1, 2011
Asymmetric write current compensation
SEAGATE TECHNOLOGY LLC11 citations84
MICRON TECHNOLOGY INC
13 patentsUS6887719B2May 3, 2005
Magnetoresistive random access memory (MRAM) cell patterning
MICRON TECHNOLOGY INC94 citations98
US6677165B1Jan 13, 2004
Magnetoresistive random access memory (MRAM) cell patterning
MICRON TECHNOLOGY INC97 citations98
US6424561B1Jul 23, 2002
MRAM architecture using offset bits for increased write selectivity
MICRON TECHNOLOGY INC56 citations96
US6396733B1May 28, 2002
Magneto-resistive memory having sense amplifier with offset control
MICRON TECHNOLOGY INC54 citations95
US6714441B1Mar 30, 2004
Bridge-type magnetic random access memory (MRAM) latch
MICRON TECHNOLOGY INC14 citations93
US6522576B2Feb 18, 2003
Magneto-resistive memory array
MICRON TECHNOLOGY INC20 citations93
US6493258B1Dec 10, 2002
Magneto-resistive memory array
MICRON TECHNOLOGY INC28 citations93
US6363007B1Mar 26, 2002
Magneto-resistive memory with shared wordline and sense line
MICRON TECHNOLOGY INC24 citations93
US6765823B1Jul 20, 2004
Magnetic memory cell with shape anisotropy
MICRON TECHNOLOGY INC36 citations92
US6717194B2Apr 6, 2004
Magneto-resistive bit structure and method of manufacture therefor
MICRON TECHNOLOGY INC18 citations92
US6671834B1Dec 30, 2003
Memory redundancy with programmable non-volatile control
MICRON TECHNOLOGY INC14 citations92
US6590805B2Jul 8, 2003
Magneto-resistive memory having sense amplifier with offset control
MICRON TECHNOLOGY INC21 citations92
US6522574B2Feb 18, 2003
MRAM architectures for increased write selectivity
MICRON TECHNOLOGY INC13 citations92
CHEN YIRAN
6 patentsUS8296620B2Oct 23, 2012
Data devices including multiple error correction codes and methods of utilizing
CHEN YIRAN24 citations93
US8514605B2Aug 20, 2013
MRAM diode array and access method
CHEN YIRAN7 citations84
US8416615B2Apr 9, 2013
Transmission gate-based spin-transfer torque memory unit
CHEN YIRAN5 citations84
US8289746B2Oct 16, 2012
MRAM diode array and access method
CHEN YIRAN9 citations84
US8199563B2Jun 12, 2012
Transmission gate-based spin-transfer torque memory unit
CHEN YIRAN7 citations84
US8081504B2Dec 20, 2011
Computer memory device with status register
CHEN YIRAN11 citations84
HONEYWELL INC
3 patentsUS6134138AOct 17, 2000
Method and apparatus for reading a magnetoresistive memory
HONEYWELL INC170 citations99
US6175525B1Jan 16, 2001
Non-volatile storage latch
HONEYWELL INC62 citations93
US6178111B1Jan 23, 2001
Method and apparatus for writing data states to non-volatile storage devices
HONEYWELL INC34 citations89
CISCO TECH INC
3 patentsUS7113484B1Sep 26, 2006
Downstream channel change technique implemented in an access network
CISCO TECH INC196 citations98
US7058007B1Jun 6, 2006
Method for a cable modem to rapidly switch to a backup CMTS
CISCO TECH INC107 citations97
US7656890B2Feb 2, 2010
Downstream channel change technique implemented in an access network
CISCO TECH INC26 citations92
GM GLOBAL TECH OPERATIONS LLC
3 patentsUS11217826B2Jan 4, 2022
Methods of making sulfide-impregnated solid-state battery
GM GLOBAL TECH OPERATIONS LLC10 citations86
US11374257B2Jun 28, 2022
Softened solid-state electrolytes for lithium ion batteries
GM GLOBAL TECH OPERATIONS LLC7 citations85
US11145922B2Oct 12, 2021
Solid-state battery having a capacitor-assisted interlayer
GM GLOBAL TECH OPERATIONS LLC14 citations85
MOFFETT TECH CO LIMITED
2 patentsJIN INSIK
2 patentsLU YONG
1 patentAHN YONGCHUL
1 patentZHAO FUQIANG
1 patentUNIV AUBURN
1 patentShowing the top 50 of 212 patents by PatentIndex Score.