Inventor
Lin cheng-jun
TW2 patents
Patents
2 patentsUS12426517B2Sep 23, 2025
Resistive memory device with protrusion covered with resistance changing element and method for manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12041860B2Jul 16, 2024
Resistive memory device and method for manufacturing with protrusion of electrode
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59