Inventor
Feng li-wei
TW96 patents
⚠️ This page may combine multiple inventors who share the name “Feng li-wei”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
44 patentsUS9530778B1Dec 27, 2016
Semiconductor devices having metal gate and method for manufacturing semiconductor devices having metal gate
UNITED MICROELECTRONICS CORP40 citations94
US9123659B1Sep 1, 2015
Method for manufacturing finFET device
UNITED MICROELECTRONICS CORP30 citations94
US10074656B1Sep 11, 2018
Semiconductor memory device and manufacturing method thereof
UNITED MICROELECTRONICS CORP19 citations93
US10600790B2Mar 24, 2020
Manufacturing method of semiconductor memory device
UNITED MICROELECTRONICS CORP6 citations84
US10079277B2Sep 18, 2018
Method of fabricating metal-insulator-metal capacitor
UNITED MICROELECTRONICS CORP9 citations84
US10068907B1Sep 4, 2018
Dynamic random access memory
UNITED MICROELECTRONICS CORP10 citations84
US9960167B1May 1, 2018
Method for forming semiconductor device
UNITED MICROELECTRONICS CORP7 citations84
US9929162B1Mar 27, 2018
Semiconductor device and method for forming the same
UNITED MICROELECTRONICS CORP9 citations84
US9859283B1Jan 2, 2018
Semiconductor memory structure
UNITED MICROELECTRONICS CORP10 citations84
US9704737B2Jul 11, 2017
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP10 citations84
US9559164B2Jan 31, 2017
Nanowire transistor device and method for manufacturing nanowire transistor device
UNITED MICROELECTRONICS CORP9 citations84
US9552978B1Jan 24, 2017
Method of decreasing fin bending
UNITED MICROELECTRONICS CORP11 citations84
US9502410B1Nov 22, 2016
Semiconductor structure and manufacturing method thereof
UNITED MICROELECTRONICS CORP13 citations84
US9484263B1Nov 1, 2016
Method of removing a hard mask on a gate
UNITED MICROELECTRONICS CORP8 citations84
US9455194B1Sep 27, 2016
Method for fabricating semiconductor device
UNITED MICROELECTRONICS CORP7 citations84
US10978457B2Apr 13, 2021
Semiconductor device and manufacturing method thereof
UNITED MICROELECTRONICS CORP4 citations73
US10643997B2May 5, 2020
Semiconductor device with metal gates
UNITED MICROELECTRONICS CORP2 citations73
US10396073B2Aug 27, 2019
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP2 citations73
US10170481B2Jan 1, 2019
Semiconductor memory device and method of forming the same
UNITED MICROELECTRONICS CORP2 citations73
US10056467B2Aug 21, 2018
Semiconductor fin structure and method of forming the same
UNITED MICROELECTRONICS CORP2 citations73
US9985035B1May 29, 2018
Semiconductor memory structure
UNITED MICROELECTRONICS CORP4 citations73
US9947792B2Apr 17, 2018
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP3 citations73
US9773887B2Sep 26, 2017
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP3 citations73
US9754938B1Sep 5, 2017
Semiconductor device and method of fabricating the same
UNITED MICROELECTRONICS CORP3 citations73
US9653290B2May 16, 2017
Method for manufacturing nanowire transistor device
UNITED MICROELECTRONICS CORP3 citations73
US9627268B2Apr 18, 2017
Method for fabricating semiconductor device
UNITED MICROELECTRONICS CORP5 citations73
US9508715B1Nov 29, 2016
Semiconductor structure
UNITED MICROELECTRONICS CORP3 citations73
US9384978B1Jul 5, 2016
Method of forming trenches
UNITED MICROELECTRONICS CORP3 citations73
US11508614B2Nov 22, 2022
Method of forming semiconductor device having capped air gaps between buried bit lines and buried gate
UNITED MICROELECTRONICS CORP2 citations72
US10854676B2Dec 1, 2020
Semiconductor device having capped air caps between buried bit lines and buried gate
UNITED MICROELECTRONICS CORP4 citations72
US10672864B2Jun 2, 2020
Manufacturing method of semiconductor memory device
UNITED MICROELECTRONICS CORP2 citations72
US10546861B2Jan 28, 2020
Semiconductor device for avoiding short circuit between adjacent storage nodes and manufacturing method thereof
UNITED MICROELECTRONICS CORP4 citations72
US10361209B2Jul 23, 2019
Semiconductor memory device
UNITED MICROELECTRONICS CORP4 citations72
US10276650B2Apr 30, 2019
Semiconductor memory device and manufacturing method thereof
UNITED MICROELECTRONICS CORP2 citations72
US10181473B2Jan 15, 2019
Semiconductor device
UNITED MICROELECTRONICS CORP4 citations72
US9653603B1May 16, 2017
Semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP2 citations72
US11233057B2Jan 25, 2022
Semiconductor structure and fabrication method thereof
UNITED MICROELECTRONICS CORP2 citations71
US11049863B2Jun 29, 2021
Semiconductor structure with capacitor landing pad and method of making the same
UNITED MICROELECTRONICS CORP3 citations71
US10529719B2Jan 7, 2020
Semiconductor structure and fabrication method thereof
UNITED MICROELECTRONICS CORP2 citations71
US10290736B2May 14, 2019
Semiconductor device and method of forming the same
UNITED MICROELECTRONICS CORP2 citations71
US10169521B2Jan 1, 2019
Method for forming contact plug layout
UNITED MICROELECTRONICS CORP3 citations69
US11271000B2Mar 8, 2022
Method for fabricating semiconductor device
UNITED MICROELECTRONICS CORP2 citations64
US11121136B2Sep 14, 2021
Insulating structure and method of forming the same
UNITED MICROELECTRONICS CORP0 citations63
US11069689B2Jul 20, 2021
Manufacturing method of semiconductor memory device
UNITED MICROELECTRONICS CORP0 citations63
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
6 patentsUS11600622B2Mar 7, 2023
Method of forming semiconductor memory device comprises a bit line having a plurality of pins extending along a direction being perpendicular to a substrate
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD2 citations73
US11380754B2Jul 5, 2022
Manufacturing method of semiconductor device and semiconductor device
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD2 citations73
US12477722B2Nov 18, 2025
Semiconductor memory device comprises a bit line having a plurality of pins extending toward a substrate
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD0 citations62
US12274048B2Apr 8, 2025
Dynamic random access memory device
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD0 citations62
US12200923B2Jan 14, 2025
Method of fabricating semiconductor device having bit line comprising a plurality of pins extending toward the substrate
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD0 citations62
US12114487B2Oct 8, 2024
Semiconductor memory device having bit lines and isolation fins disposed on the substrate
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD0 citations62
Showing the top 50 of 96 patents by PatentIndex Score.