Inventor
NAKAMURA YASUNA
JP3 patents
Patents
3 patentsUS5381032AJan 10, 1995
Semiconductor device having a gate electrode of polycrystal layer and a method of manufacturing thereof
MITSUBISHI ELECTRIC CORP26 citations90
US5177569AJan 5, 1993
Semiconductor device having a two layered structure gate electrode
MITSUBISHI ELECTRIC CORP40 citations90
US5221630AJun 22, 1993
Method of manufacturing semiconductor device having a two layered structure gate electrode
MITSUBISHI ELECTRIC CORP11 citations71