Inventor
TSAI WILMAN
US57 patents
⚠️ This page may combine multiple inventors who share the name “TSAI WILMAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
26 patentsUS10937783B2Mar 2, 2021
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US11728332B2Aug 15, 2023
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11456100B2Sep 27, 2022
MRAM stacks, MRAM devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11437434B2Sep 6, 2022
Magnetic device and magnetic random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11107919B2Aug 31, 2021
Method of manufacturing semiconductor device including ferroelectric layer having columnar-shaped crystals
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11043489B2Jun 22, 2021
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10879307B2Dec 29, 2020
Magnetic device and magnetic random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10868132B2Dec 15, 2020
Semiconductor device including standard cells with header/footer switch including negative capacitance
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10515857B2Dec 24, 2019
Method for manufacturing semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10516061B2Dec 24, 2019
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10431696B2Oct 1, 2019
Structure and formation method of semiconductor device structure with nanowire
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10056498B2Aug 21, 2018
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US12148829B2Nov 19, 2024
Method of manufacturing semiconductor device including ferroelectric layer having nano crystals
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11862732B2Jan 2, 2024
Method for forming semiconductor device structure with nanowires
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11430699B2Aug 30, 2022
Method of manufacturing semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11398567B2Jul 26, 2022
Semiconductor device with negative capacitance comprising ferroelectric layer including amorphous and crystals
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11107931B2Aug 31, 2021
Structure and formation method of semiconductor device structure with nanowires
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12527002B2Jan 13, 2026
Sot MRAM having dielectric interfacial layer and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12334238B2Jun 17, 2025
MRAM stacks, MRAM devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12211836B2Jan 28, 2025
Semiconductor device and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12114510B2Oct 8, 2024
SOT MRAM having dielectric interfacial layer and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11963366B2Apr 16, 2024
Magnetic device and magnetic random access memory
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11862373B2Jan 2, 2024
MRAM stacks and memory devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11469267B2Oct 11, 2022
SOT MRAM having dielectric interfacial layer and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11114540B2Sep 7, 2021
Semiconductor device including standard cells with header/footer switch including negative capacitance
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10872822B2Dec 22, 2020
Method for manufacturing semiconductor devices
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
INTEL CORP
15 patentsUS6458495B1Oct 1, 2002
Transmission and phase balance for phase-shifting mask
INTEL CORP80 citations98
US7208366B2Apr 24, 2007
Bonding gate oxide with high-k additives
INTEL CORP54 citations96
US7928426B2Apr 19, 2011
Forming a non-planar transistor having a quantum well channel
INTEL CORP23 citations93
US7435987B1Oct 14, 2008
Forming a type I heterostructure in a group IV semiconductor
INTEL CORP34 citations93
US8026509B2Sep 27, 2011
Tunnel field effect transistor and method of manufacturing same
INTEL CORP16 citations92
US6485869B2Nov 26, 2002
Photomask frame modification to eliminate process induced critical dimension control variation
INTEL CORP31 citations90
US7777282B2Aug 17, 2010
Self-aligned tunneling pocket in field-effect transistors and processes to form same
INTEL CORP17 citations84
US7629603B2Dec 8, 2009
Strain-inducing semiconductor regions
INTEL CORP18 citations84
US6210843B1Apr 3, 2001
Modulation of peripheral critical dimension on photomask with differential electron beam dose
INTEL CORP15 citations76
US9899505B2Feb 20, 2018
Conductivity improvements for III-V semiconductor devices
INTEL CORP3 citations73
US6692878B2Feb 17, 2004
Photomask frame modification to eliminate process induced critical dimension control variation
INTEL CORP7 citations71
US7763511B2Jul 27, 2010
Dielectric barrier for nanocrystals
INTEL CORP5 citations63
US10998405B2May 4, 2021
Low-defect graphene-based devices and interconnects
INTEL CORP0 citations62
US10355112B2Jul 16, 2019
Forming a non-planar transistor having a quantum well channel
INTEL CORP0 citations52
US9806180B2Oct 31, 2017
Forming a non-planar transistor having a quantum well channel
INTEL CORP0 citations52
DIAMONEX INC
3 patentsUS5186973AFeb 16, 1993
HFCVD method for producing thick, adherent and coherent polycrystalline diamonds films
DIAMONEX INC57 citations96
US5126206AJun 30, 1992
Diamond-on-a-substrate for electronic applications
DIAMONEX INC85 citations96
US5160544ANov 3, 1992
Hot filament chemical vapor deposition reactor
DIAMONEX INC108 citations94
RADOSAVLJEVIC MARKO
1 patentCHUI CHI ON
1 patentVARIAN ASSOCIATES
1 patentAIR PROD & CHEM
1 patentUNIV LELAND STANFORD JUNIOR
1 patentMICRON TECHNOLOGY INC
1 patentShowing the top 50 of 57 patents by PatentIndex Score.