P

Inventor

TSAI WILMAN

US57 patents
⚠️ This page may combine multiple inventors who share the name “TSAI WILMAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

26 patents
US10937783B2Mar 2, 2021

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD6 citations84
US11728332B2Aug 15, 2023

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US11456100B2Sep 27, 2022

MRAM stacks, MRAM devices and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11437434B2Sep 6, 2022

Magnetic device and magnetic random access memory

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11107919B2Aug 31, 2021

Method of manufacturing semiconductor device including ferroelectric layer having columnar-shaped crystals

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11043489B2Jun 22, 2021

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US10879307B2Dec 29, 2020

Magnetic device and magnetic random access memory

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10868132B2Dec 15, 2020

Semiconductor device including standard cells with header/footer switch including negative capacitance

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10515857B2Dec 24, 2019

Method for manufacturing semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10516061B2Dec 24, 2019

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10431696B2Oct 1, 2019

Structure and formation method of semiconductor device structure with nanowire

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10056498B2Aug 21, 2018

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US12148829B2Nov 19, 2024

Method of manufacturing semiconductor device including ferroelectric layer having nano crystals

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11862732B2Jan 2, 2024

Method for forming semiconductor device structure with nanowires

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11430699B2Aug 30, 2022

Method of manufacturing semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11398567B2Jul 26, 2022

Semiconductor device with negative capacitance comprising ferroelectric layer including amorphous and crystals

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11107931B2Aug 31, 2021

Structure and formation method of semiconductor device structure with nanowires

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US12527002B2Jan 13, 2026

Sot MRAM having dielectric interfacial layer and method forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12334238B2Jun 17, 2025

MRAM stacks, MRAM devices and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12211836B2Jan 28, 2025

Semiconductor device and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12114510B2Oct 8, 2024

SOT MRAM having dielectric interfacial layer and method forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11963366B2Apr 16, 2024

Magnetic device and magnetic random access memory

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11862373B2Jan 2, 2024

MRAM stacks and memory devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11469267B2Oct 11, 2022

SOT MRAM having dielectric interfacial layer and method forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11114540B2Sep 7, 2021

Semiconductor device including standard cells with header/footer switch including negative capacitance

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10872822B2Dec 22, 2020

Method for manufacturing semiconductor devices

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

INTEL CORP

15 patents
US6458495B1Oct 1, 2002

Transmission and phase balance for phase-shifting mask

INTEL CORP80 citations98
US7208366B2Apr 24, 2007

Bonding gate oxide with high-k additives

INTEL CORP54 citations96
US7928426B2Apr 19, 2011

Forming a non-planar transistor having a quantum well channel

INTEL CORP23 citations93
US7435987B1Oct 14, 2008

Forming a type I heterostructure in a group IV semiconductor

INTEL CORP34 citations93
US8026509B2Sep 27, 2011

Tunnel field effect transistor and method of manufacturing same

INTEL CORP16 citations92
US6485869B2Nov 26, 2002

Photomask frame modification to eliminate process induced critical dimension control variation

INTEL CORP31 citations90
US7777282B2Aug 17, 2010

Self-aligned tunneling pocket in field-effect transistors and processes to form same

INTEL CORP17 citations84
US7629603B2Dec 8, 2009

Strain-inducing semiconductor regions

INTEL CORP18 citations84
US6210843B1Apr 3, 2001

Modulation of peripheral critical dimension on photomask with differential electron beam dose

INTEL CORP15 citations76
US9899505B2Feb 20, 2018

Conductivity improvements for III-V semiconductor devices

INTEL CORP3 citations73
US6692878B2Feb 17, 2004

Photomask frame modification to eliminate process induced critical dimension control variation

INTEL CORP7 citations71
US7763511B2Jul 27, 2010

Dielectric barrier for nanocrystals

INTEL CORP5 citations63
US10998405B2May 4, 2021

Low-defect graphene-based devices and interconnects

INTEL CORP0 citations62
US10355112B2Jul 16, 2019

Forming a non-planar transistor having a quantum well channel

INTEL CORP0 citations52
US9806180B2Oct 31, 2017

Forming a non-planar transistor having a quantum well channel

INTEL CORP0 citations52

DIAMONEX INC

3 patents

RADOSAVLJEVIC MARKO

1 patent

CHUI CHI ON

1 patent

VARIAN ASSOCIATES

1 patent

AIR PROD & CHEM

1 patent

UNIV LELAND STANFORD JUNIOR

1 patent

MICRON TECHNOLOGY INC

1 patent

Showing the top 50 of 57 patents by PatentIndex Score.