Inventor
XU YONGAN
US89 patents
⚠️ This page may combine multiple inventors who share the name “XU YONGAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
34 patentsUS10020254B1Jul 10, 2018
Integration of super via structure in BEOL
IBM39 citations94
US10020255B1Jul 10, 2018
Integration of super via structure in BEOL
IBM36 citations94
US9219007B2Dec 22, 2015
Double self aligned via patterning
IBM24 citations92
US10658180B1May 19, 2020
EUV pattern transfer with ion implantation and reduced impact of resist residue
IBM6 citations84
US10622301B2Apr 14, 2020
Method of forming a straight via profile with precise critical dimension control
IBM8 citations84
US9991365B1Jun 5, 2018
Forming vertical transport field effect transistors with uniform bottom spacer thickness
IBM12 citations84
US9406746B2Aug 2, 2016
Work function metal fill for replacement gate fin field effect transistor process
IBM5 citations84
US9257334B2Feb 9, 2016
Double self-aligned via patterning
IBM13 citations84
US9064813B2Jun 23, 2015
Trench patterning with block first sidewall image transfer
IBM14 citations84
US10157789B2Dec 18, 2018
Via formation using sidewall image transfer process to define lateral dimension
IBM12 citations83
US9490168B1Nov 8, 2016
Via formation using sidewall image transfer process to define lateral dimension
IBM10 citations83
US10032632B2Jul 24, 2018
Selective gas etching for self-aligned pattern transfer
IBM4 citations82
US12094774B2Sep 17, 2024
Back-end-of-line single damascene top via spacer defined by pillar mandrels
IBM2 citations73
US11037822B2Jun 15, 2021
Svia using a single damascene interconnect
IBM2 citations73
US10937653B2Mar 2, 2021
Multiple patterning scheme integration with planarized cut patterning
IBM1 citations73
US10749011B2Aug 18, 2020
Area selective cyclic deposition for VFET top spacer
IBM3 citations73
US10672705B2Jun 2, 2020
Method of forming a straight via profile with precise critical dimension control
IBM3 citations73
US10607922B1Mar 31, 2020
Controlling via critical dimension during fabrication of a semiconductor wafer
IBM3 citations73
US10032633B1Jul 24, 2018
Image transfer using EUV lithographic structure and double patterning process
IBM3 citations73
US9837351B1Dec 5, 2017
Avoiding gate metal via shorting to source or drain contacts
IBM3 citations73
US11152298B2Oct 19, 2021
Metal via structure
IBM3 citations71
US11543793B2Jan 3, 2023
Developer critical dimension control with pulse development
IBM0 citations63
US11171001B2Nov 9, 2021
Multiple patterning scheme integration with planarized cut patterning
IBM0 citations63
US11069564B2Jul 20, 2021
Double metal patterning
IBM0 citations63
US11031246B2Jun 8, 2021
EUV pattern transfer with ion implantation and reduced impact of resist residue
IBM0 citations63
US11022887B2Jun 1, 2021
Tunable adhesion of EUV photoresist on oxide surface
IBM0 citations63
US10957552B2Mar 23, 2021
Extreme ultraviolet lithography patterning with directional deposition
IBM0 citations63
US10915690B2Feb 9, 2021
Via design optimization to improve via resistance
IBM0 citations63
US10915085B2Feb 9, 2021
Developer critical dimension control with pulse development
IBM0 citations63
US10886197B2Jan 5, 2021
Controlling via critical dimension with a titanium nitride hard mask
IBM1 citations63
US10825720B2Nov 3, 2020
Single trench damascene interconnect using TiN HMO
IBM1 citations63
US10629436B2Apr 21, 2020
Spacer image transfer with double mandrel
IBM1 citations63
US10551742B2Feb 4, 2020
Tunable adhesion of EUV photoresist on oxide surface
IBM1 citations63
US11131919B2Sep 28, 2021
Extreme ultraviolet (EUV) mask stack processing
IBM1 citations62
APPLIED MATERIALS INC
11 patentsUS11610925B2Mar 21, 2023
Imaging system and method of creating composite images
APPLIED MATERIALS INC5 citations74
US11111176B1Sep 7, 2021
Methods and apparatus of processing transparent substrates
APPLIED MATERIALS INC2 citations73
US10921721B1Feb 16, 2021
Measurement system and grating pattern array
APPLIED MATERIALS INC2 citations73
US11754919B2Sep 12, 2023
Lithography method to form structures with slanted angle
APPLIED MATERIALS INC2 citations71
US12060297B2Aug 13, 2024
Methods and apparatus of processing transparent substrates
APPLIED MATERIALS INC0 citations63
US12111572B2Oct 8, 2024
Methods of greytone imprint lithography to fabricate optical devices
APPLIED MATERIALS INC0 citations62
US12021102B2Jun 25, 2024
Imaging system and method of creating composite images
APPLIED MATERIALS INC0 citations62
US11977246B2May 7, 2024
Mask orientation
APPLIED MATERIALS INC0 citations62
US11709423B2Jul 25, 2023
Methods of greytone imprint lithography to fabricate optical devices
APPLIED MATERIALS INC0 citations62
US11630251B2Apr 18, 2023
Mask orientation
APPLIED MATERIALS INC0 citations62
US11226440B2Jan 18, 2022
Mask orientation
APPLIED MATERIALS INC0 citations62
TESSERA LLC
2 patentsUS11699591B2Jul 11, 2023
Two-color self-aligned double patterning (SADP) to yield static random access memory (SRAM) and dense logic
TESSERA LLC2 citations73
US11978639B2May 7, 2024
Two-color self-aligned double patterning (SADP) to yield static random access memory (SRAM) and dense logic
TESSERA LLC0 citations63
AGENCY SCIENCE TECH & RES
1 patentGLOBALFOUNDRIES INC
1 patentADEIA SEMICONDUCTOR SOLUTIONS LLC
1 patentShowing the top 50 of 89 patents by PatentIndex Score.