P

Inventor

XU YONGAN

US89 patents
⚠️ This page may combine multiple inventors who share the name “XU YONGAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

34 patents
US10020254B1Jul 10, 2018

Integration of super via structure in BEOL

IBM39 citations94
US10020255B1Jul 10, 2018

Integration of super via structure in BEOL

IBM36 citations94
US9219007B2Dec 22, 2015

Double self aligned via patterning

IBM24 citations92
US10658180B1May 19, 2020

EUV pattern transfer with ion implantation and reduced impact of resist residue

IBM6 citations84
US10622301B2Apr 14, 2020

Method of forming a straight via profile with precise critical dimension control

IBM8 citations84
US9991365B1Jun 5, 2018

Forming vertical transport field effect transistors with uniform bottom spacer thickness

IBM12 citations84
US9406746B2Aug 2, 2016

Work function metal fill for replacement gate fin field effect transistor process

IBM5 citations84
US9257334B2Feb 9, 2016

Double self-aligned via patterning

IBM13 citations84
US9064813B2Jun 23, 2015

Trench patterning with block first sidewall image transfer

IBM14 citations84
US10157789B2Dec 18, 2018

Via formation using sidewall image transfer process to define lateral dimension

IBM12 citations83
US9490168B1Nov 8, 2016

Via formation using sidewall image transfer process to define lateral dimension

IBM10 citations83
US10032632B2Jul 24, 2018

Selective gas etching for self-aligned pattern transfer

IBM4 citations82
US12094774B2Sep 17, 2024

Back-end-of-line single damascene top via spacer defined by pillar mandrels

IBM2 citations73
US11037822B2Jun 15, 2021

Svia using a single damascene interconnect

IBM2 citations73
US10937653B2Mar 2, 2021

Multiple patterning scheme integration with planarized cut patterning

IBM1 citations73
US10749011B2Aug 18, 2020

Area selective cyclic deposition for VFET top spacer

IBM3 citations73
US10672705B2Jun 2, 2020

Method of forming a straight via profile with precise critical dimension control

IBM3 citations73
US10607922B1Mar 31, 2020

Controlling via critical dimension during fabrication of a semiconductor wafer

IBM3 citations73
US10032633B1Jul 24, 2018

Image transfer using EUV lithographic structure and double patterning process

IBM3 citations73
US9837351B1Dec 5, 2017

Avoiding gate metal via shorting to source or drain contacts

IBM3 citations73
US11152298B2Oct 19, 2021

Metal via structure

IBM3 citations71
US11543793B2Jan 3, 2023

Developer critical dimension control with pulse development

IBM0 citations63
US11171001B2Nov 9, 2021

Multiple patterning scheme integration with planarized cut patterning

IBM0 citations63
US11069564B2Jul 20, 2021

Double metal patterning

IBM0 citations63
US11031246B2Jun 8, 2021

EUV pattern transfer with ion implantation and reduced impact of resist residue

IBM0 citations63
US11022887B2Jun 1, 2021

Tunable adhesion of EUV photoresist on oxide surface

IBM0 citations63
US10957552B2Mar 23, 2021

Extreme ultraviolet lithography patterning with directional deposition

IBM0 citations63
US10915690B2Feb 9, 2021

Via design optimization to improve via resistance

IBM0 citations63
US10915085B2Feb 9, 2021

Developer critical dimension control with pulse development

IBM0 citations63
US10886197B2Jan 5, 2021

Controlling via critical dimension with a titanium nitride hard mask

IBM1 citations63
US10825720B2Nov 3, 2020

Single trench damascene interconnect using TiN HMO

IBM1 citations63
US10629436B2Apr 21, 2020

Spacer image transfer with double mandrel

IBM1 citations63
US10551742B2Feb 4, 2020

Tunable adhesion of EUV photoresist on oxide surface

IBM1 citations63
US11131919B2Sep 28, 2021

Extreme ultraviolet (EUV) mask stack processing

IBM1 citations62

APPLIED MATERIALS INC

11 patents

TESSERA LLC

2 patents

AGENCY SCIENCE TECH & RES

1 patent

GLOBALFOUNDRIES INC

1 patent

ADEIA SEMICONDUCTOR SOLUTIONS LLC

1 patent

Showing the top 50 of 89 patents by PatentIndex Score.