Inventor
NG JIN-AUN
TW38 patents
⚠️ This page may combine multiple inventors who share the name “NG JIN-AUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
21 patentsUS10692769B2Jun 23, 2020
Fin critical dimension loading optimization
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations82
US11404325B2Aug 2, 2022
Silicon and silicon germanium nanowire formation
TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11398476B2Jul 26, 2022
Structure and formation method of semiconductor device with hybrid fins
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9947528B2Apr 17, 2018
Structure and method for nFET with high k metal gate
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9865510B2Jan 9, 2018
Device and methods for high-K and metal gate slacks
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10388531B2Aug 20, 2019
Self-aligned insulated film for high-k metal gate device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11004747B2May 11, 2021
Fin critical dimension loading optimization
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12426356B2Sep 23, 2025
Semiconductor device structure with hybrid fins
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11854905B2Dec 26, 2023
Silicon and silicon germanium nanowire formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11670711B2Jun 6, 2023
Metal gate electrode of a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11545490B2Jan 3, 2023
Semiconductor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11133221B2Sep 28, 2021
Method for forming semiconductor device structure with gate electrode layer
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11094545B2Aug 17, 2021
Self-aligned insulated film for high-K metal gate device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11749679B2Sep 5, 2023
Integrated circuit structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11075199B2Jul 27, 2021
Method of forming semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12211844B2Jan 28, 2025
Semiconductor structure
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10854742B2Dec 1, 2020
Metal gate electrode of a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10332991B2Jun 25, 2019
Metal gate electrode of a semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9576855B2Feb 21, 2017
Device and methods for high-k and metal gate stacks
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9779947B2Oct 3, 2017
Self-aligned insulated film for high-k metal gate device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10204905B2Feb 12, 2019
Semiconductor structure and manufacturing method thereof
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50
TAIWAN SEMICONDUCTOR MFG
6 patentsUS8343867B2Jan 1, 2013
Method for main spacer trim-back
TAIWAN SEMICONDUCTOR MFG16 citations92
US8003467B2Aug 23, 2011
Method for making a semiconductor device having metal gate stacks
TAIWAN SEMICONDUCTOR MFG11 citations83
US9219125B2Dec 22, 2015
Device and methods for high-k and metal gate stacks
TAIWAN SEMICONDUCTOR MFG4 citations73
US8871625B2Oct 28, 2014
Spacer structure of a field effect transistor with an oxygen-containing layer between two oxygen-sealing layers
TAIWAN SEMICONDUCTOR MFG4 citations73
US8373199B2Feb 12, 2013
Semiconductor device having a SiGe feature and a metal gate stack
TAIWAN SEMICONDUCTOR MFG4 citations60
US9252224B2Feb 2, 2016
Self-aligned insulated film for high-k metal gate device
TAIWAN SEMICONDUCTOR MFG0 citations51
NG JIN-AUN
4 patentsUS8586436B2Nov 19, 2013
Method of forming a variety of replacement gate types including replacement gate types on a hybrid semiconductor device
NG JIN-AUN50 citations93
US8450834B2May 28, 2013
Spacer structure of a field effect transistor with an oxygen-containing layer between two oxygen-sealing layers
NG JIN-AUN16 citations92
US8822283B2Sep 2, 2014
Self-aligned insulated film for high-k metal gate device
NG JIN-AUN7 citations83
US9093559B2Jul 28, 2015
Method of hybrid high-k/metal-gate stack fabrication
NG JIN-AUN4 citations72