P

Inventor

NG JIN-AUN

TW38 patents
⚠️ This page may combine multiple inventors who share the name “NG JIN-AUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

21 patents
US10692769B2Jun 23, 2020

Fin critical dimension loading optimization

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations82
US11404325B2Aug 2, 2022

Silicon and silicon germanium nanowire formation

TAIWAN SEMICONDUCTOR MFG CO LTD5 citations73
US11398476B2Jul 26, 2022

Structure and formation method of semiconductor device with hybrid fins

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9947528B2Apr 17, 2018

Structure and method for nFET with high k metal gate

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US9865510B2Jan 9, 2018

Device and methods for high-K and metal gate slacks

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10388531B2Aug 20, 2019

Self-aligned insulated film for high-k metal gate device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11004747B2May 11, 2021

Fin critical dimension loading optimization

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations71
US12426356B2Sep 23, 2025

Semiconductor device structure with hybrid fins

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11854905B2Dec 26, 2023

Silicon and silicon germanium nanowire formation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11670711B2Jun 6, 2023

Metal gate electrode of a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations63
US11545490B2Jan 3, 2023

Semiconductor structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11133221B2Sep 28, 2021

Method for forming semiconductor device structure with gate electrode layer

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US11094545B2Aug 17, 2021

Self-aligned insulated film for high-K metal gate device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11749679B2Sep 5, 2023

Integrated circuit structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US11075199B2Jul 27, 2021

Method of forming semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations60
US12211844B2Jan 28, 2025

Semiconductor structure

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10854742B2Dec 1, 2020

Metal gate electrode of a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10332991B2Jun 25, 2019

Metal gate electrode of a semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US9576855B2Feb 21, 2017

Device and methods for high-k and metal gate stacks

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations52
US9779947B2Oct 3, 2017

Self-aligned insulated film for high-k metal gate device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US10204905B2Feb 12, 2019

Semiconductor structure and manufacturing method thereof

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations50

TAIWAN SEMICONDUCTOR MFG

6 patents

NG JIN-AUN

4 patents

CHEN CHIEN-HAO

2 patents

CHEN PO-NIEN

1 patent

TAIWAM SEMICONDUCTOR MFG COMPANY LTD

1 patent

WU WEI CHENG

1 patent

LIN JR JUNG

1 patent

CHUANG HARRY HAK-LAY

1 patent