P

Inventor

PENG CHIH-TANG

TW69 patents
⚠️ This page may combine multiple inventors who share the name “PENG CHIH-TANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

32 patents
US9853102B2Dec 26, 2017

Tunnel field-effect transistor

TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9704974B2Jul 11, 2017

Process of manufacturing Fin-FET device

TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US10332746B1Jun 25, 2019

Post UV cure for gapfill improvement

TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US11823960B2Nov 21, 2023

Method for forming semiconductor structure with high aspect ratio

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10840154B2Nov 17, 2020

Method for forming semiconductor structure with high aspect ratio

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10269937B2Apr 23, 2019

Semiconductor strips with undercuts and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9478631B2Oct 25, 2016

Vertical-gate-all-around devices and method of fabrication thereof

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10388531B2Aug 20, 2019

Self-aligned insulated film for high-k metal gate device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10361113B2Jul 23, 2019

Formation and in-situ treatment processes for gap fill layers

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10468409B2Nov 5, 2019

FinFET device with oxidation-resist STI liner structure

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US9443961B2Sep 13, 2016

Semiconductor strips with undercuts and methods for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US12369390B2Jul 22, 2025

Method for forming semiconductor structure with high aspect ratio

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12315759B2May 27, 2025

FinFET device and method of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12266728B2Apr 1, 2025

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12112974B2Oct 8, 2024

Integrated circuit isolation feature and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11942549B2Mar 26, 2024

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11862508B2Jan 2, 2024

FinFET device and method of forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11527653B2Dec 13, 2022

Semiconductor device and method of manufacture

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11387138B2Jul 12, 2022

Integrated circuit isolation feature and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11227788B2Jan 18, 2022

Method of forming isolation layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11222826B2Jan 11, 2022

FinFET structure and device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11094545B2Aug 17, 2021

Self-aligned insulated film for high-K metal gate device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10937686B2Mar 2, 2021

Formation and in-situ treatment processes for gap fill layers

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10354923B2Jul 16, 2019

Semiconductor device and method for atomic layer deposition of a dielectric over a substrate

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12170199B2Dec 17, 2024

Cyclic spin-on coating process for forming dielectric material

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11791154B2Oct 17, 2023

Cyclic spin-on coating process for forming dielectric material

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11450526B2Sep 20, 2022

Cyclic spin-on coating process for forming dielectric material

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10727064B2Jul 28, 2020

Post UV cure for gapfill improvement

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US10943820B2Mar 9, 2021

Gap-fill method having improved gap-fill capability

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations58
US10707114B2Jul 7, 2020

Method of forming isolation layer

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10643902B2May 5, 2020

Semiconductor device and method for atomic layer deposition of a dielectric over a substrate

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10483169B2Nov 19, 2019

FinFET cut-last process using oxide trench fill

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52

TAIWAN SEMICONDUCTOR MFG

9 patents

Lin yu chao

1 patent

CHANG CHIA-WEI

1 patent

NG JIN-AUN

1 patent

YU WEIBO

1 patent

PENG CHIH-TANG

1 patent

LU CHANG-SHEN

1 patent

LIOU YU-LING

1 patent

INTEGRATED CRYSTAL TECHNOLOGY

1 patent

LEE TZE-LIANG

1 patent

Showing the top 50 of 69 patents by PatentIndex Score.