Inventor
PENG CHIH-TANG
TW69 patents
⚠️ This page may combine multiple inventors who share the name “PENG CHIH-TANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
32 patentsUS9853102B2Dec 26, 2017
Tunnel field-effect transistor
TAIWAN SEMICONDUCTOR MFG CO LTD7 citations84
US9704974B2Jul 11, 2017
Process of manufacturing Fin-FET device
TAIWAN SEMICONDUCTOR MFG CO LTD11 citations84
US10332746B1Jun 25, 2019
Post UV cure for gapfill improvement
TAIWAN SEMICONDUCTOR MFG CO LTD9 citations83
US11823960B2Nov 21, 2023
Method for forming semiconductor structure with high aspect ratio
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations73
US10840154B2Nov 17, 2020
Method for forming semiconductor structure with high aspect ratio
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US10269937B2Apr 23, 2019
Semiconductor strips with undercuts and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US9478631B2Oct 25, 2016
Vertical-gate-all-around devices and method of fabrication thereof
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations73
US10388531B2Aug 20, 2019
Self-aligned insulated film for high-k metal gate device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US10361113B2Jul 23, 2019
Formation and in-situ treatment processes for gap fill layers
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10468409B2Nov 5, 2019
FinFET device with oxidation-resist STI liner structure
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations71
US9443961B2Sep 13, 2016
Semiconductor strips with undercuts and methods for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations63
US12369390B2Jul 22, 2025
Method for forming semiconductor structure with high aspect ratio
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12315759B2May 27, 2025
FinFET device and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12266728B2Apr 1, 2025
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12112974B2Oct 8, 2024
Integrated circuit isolation feature and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11942549B2Mar 26, 2024
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11862508B2Jan 2, 2024
FinFET device and method of forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11527653B2Dec 13, 2022
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11387138B2Jul 12, 2022
Integrated circuit isolation feature and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11227788B2Jan 18, 2022
Method of forming isolation layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11222826B2Jan 11, 2022
FinFET structure and device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11094545B2Aug 17, 2021
Self-aligned insulated film for high-K metal gate device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10937686B2Mar 2, 2021
Formation and in-situ treatment processes for gap fill layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US10354923B2Jul 16, 2019
Semiconductor device and method for atomic layer deposition of a dielectric over a substrate
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations62
US12170199B2Dec 17, 2024
Cyclic spin-on coating process for forming dielectric material
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11791154B2Oct 17, 2023
Cyclic spin-on coating process for forming dielectric material
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US11450526B2Sep 20, 2022
Cyclic spin-on coating process for forming dielectric material
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations61
US10727064B2Jul 28, 2020
Post UV cure for gapfill improvement
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations61
US10943820B2Mar 9, 2021
Gap-fill method having improved gap-fill capability
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations58
US10707114B2Jul 7, 2020
Method of forming isolation layer
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10643902B2May 5, 2020
Semiconductor device and method for atomic layer deposition of a dielectric over a substrate
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US10483169B2Nov 19, 2019
FinFET cut-last process using oxide trench fill
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
TAIWAN SEMICONDUCTOR MFG
9 patentsUS8895446B2Nov 25, 2014
Fin deformation modulation
TAIWAN SEMICONDUCTOR MFG31 citations92
US7592710B2Sep 22, 2009
Bond pad structure for wire bonding
TAIWAN SEMICONDUCTOR MFG19 citations92
US9318447B2Apr 19, 2016
Semiconductor device and method of forming vertical structure
TAIWAN SEMICONDUCTOR MFG6 citations84
US9276062B2Mar 1, 2016
Fin deformation modulation
TAIWAN SEMICONDUCTOR MFG6 citations84
US8048752B2Nov 1, 2011
Spacer shape engineering for void-free gap-filling process
TAIWAN SEMICONDUCTOR MFG9 citations84
US9287129B2Mar 15, 2016
Method of fabricating FinFETs
TAIWAN SEMICONDUCTOR MFG3 citations73
US9177955B2Nov 3, 2015
Isolation region gap fill method
TAIWAN SEMICONDUCTOR MFG6 citations72
US8629508B2Jan 14, 2014
Semiconductor device and method of manufacture
TAIWAN SEMICONDUCTOR MFG1 citations63
US8658539B2Feb 25, 2014
Fin profile structure and method of making same
TAIWAN SEMICONDUCTOR MFG2 citations61
Lin yu chao
1 patentCHANG CHIA-WEI
1 patentNG JIN-AUN
1 patentYU WEIBO
1 patentPENG CHIH-TANG
1 patentLU CHANG-SHEN
1 patentLIOU YU-LING
1 patentINTEGRATED CRYSTAL TECHNOLOGY
1 patentLEE TZE-LIANG
1 patentShowing the top 50 of 69 patents by PatentIndex Score.