Inventor
TU YUAN-TIEN
TW29 patents
⚠️ This page may combine multiple inventors who share the name “TU YUAN-TIEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TAIWAN SEMICONDUCTOR MFG CO LTD
26 patentsUS11996321B2May 28, 2024
Semiconductor structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD4 citations74
US11818967B2Nov 14, 2023
Sidewall protection for PCRAM device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11664272B2May 30, 2023
Etch profile control of gate contact opening
TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11362277B2Jun 14, 2022
Sidewall protection for PCRAM device
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11961893B2Apr 16, 2024
Contacts for semiconductor devices and methods of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10388531B2Aug 20, 2019
Self-aligned insulated film for high-k metal gate device
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US12538777B2Jan 27, 2026
Fin field effect transistor (FinFET) having hourglass-shaped via structure on source/drain and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12349395B2Jul 1, 2025
Inter block for recessed contacts and methods forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12336192B2Jun 17, 2025
Method of forming semiconductor device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12245526B2Mar 4, 2025
Sidewall protection for PCRAM device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12120968B2Oct 15, 2024
Semiconductor device, memory cell including connecting structure having base portion and pillar portion, and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12119386B2Oct 15, 2024
Conductive capping for work function layer and method forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12107007B2Oct 1, 2024
Recessed contacts at line end and methods forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12107003B2Oct 1, 2024
Etch profile control of gate contact opening
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12041790B2Jul 16, 2024
Semiconductor device, memory cell and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11967622B2Apr 23, 2024
Inter block for recessed contacts and methods forming same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11749732B2Sep 5, 2023
Etch profile control of via opening
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11594576B2Feb 28, 2023
Semiconductor device, memory cell and method of forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11094545B2Aug 17, 2021
Self-aligned insulated film for high-K metal gate device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12183633B2Dec 31, 2024
Dielectric cap structure in semiconductor devices and methods of manufacturing the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12507600B2Dec 23, 2025
Phase change memory device wherein first and second electrodes penetrate through dielectric and phase change layers
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11810919B2Nov 7, 2023
Semiconductor device structure with conductive via structure and method for forming the same
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12363947B2Jul 15, 2025
Structure and formation method of semiconductor device with contact structures
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9779947B2Oct 3, 2017
Self-aligned insulated film for high-k metal gate device
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12550408B2Feb 10, 2026
Connection between gate and source/drain feature
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US12087832B2Sep 10, 2024
Semiconductor device interconnects and methods of formation
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations47