P

Inventor

TU YUAN-TIEN

TW29 patents
⚠️ This page may combine multiple inventors who share the name “TU YUAN-TIEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TAIWAN SEMICONDUCTOR MFG CO LTD

26 patents
US11996321B2May 28, 2024

Semiconductor structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD4 citations74
US11818967B2Nov 14, 2023

Sidewall protection for PCRAM device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11664272B2May 30, 2023

Etch profile control of gate contact opening

TAIWAN SEMICONDUCTOR MFG CO LTD3 citations73
US11362277B2Jun 14, 2022

Sidewall protection for PCRAM device

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations73
US11961893B2Apr 16, 2024

Contacts for semiconductor devices and methods of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10388531B2Aug 20, 2019

Self-aligned insulated film for high-k metal gate device

TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US12538777B2Jan 27, 2026

Fin field effect transistor (FinFET) having hourglass-shaped via structure on source/drain and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12349395B2Jul 1, 2025

Inter block for recessed contacts and methods forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12336192B2Jun 17, 2025

Method of forming semiconductor device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12245526B2Mar 4, 2025

Sidewall protection for PCRAM device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12120968B2Oct 15, 2024

Semiconductor device, memory cell including connecting structure having base portion and pillar portion, and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12119386B2Oct 15, 2024

Conductive capping for work function layer and method forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12107007B2Oct 1, 2024

Recessed contacts at line end and methods forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12107003B2Oct 1, 2024

Etch profile control of gate contact opening

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12041790B2Jul 16, 2024

Semiconductor device, memory cell and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11967622B2Apr 23, 2024

Inter block for recessed contacts and methods forming same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11749732B2Sep 5, 2023

Etch profile control of via opening

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11594576B2Feb 28, 2023

Semiconductor device, memory cell and method of forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US11094545B2Aug 17, 2021

Self-aligned insulated film for high-K metal gate device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
US12183633B2Dec 31, 2024

Dielectric cap structure in semiconductor devices and methods of manufacturing the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations59
US12507600B2Dec 23, 2025

Phase change memory device wherein first and second electrodes penetrate through dielectric and phase change layers

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US11810919B2Nov 7, 2023

Semiconductor device structure with conductive via structure and method for forming the same

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations52
US12363947B2Jul 15, 2025

Structure and formation method of semiconductor device with contact structures

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US9779947B2Oct 3, 2017

Self-aligned insulated film for high-k metal gate device

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations51
US12550408B2Feb 10, 2026

Connection between gate and source/drain feature

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations49
US12087832B2Sep 10, 2024

Semiconductor device interconnects and methods of formation

TAIWAN SEMICONDUCTOR MFG CO LTD0 citations47

NG JIN-AUN

1 patent

TU YUAN-TIEN

1 patent

TAIWAN SEMICONDUCTOR MFG

1 patent