Inventor
YAMASHITA KENYA
JP32 patents
⚠️ This page may combine multiple inventors who share the name “YAMASHITA KENYA”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
PANASONIC CORP
12 patentsUS7507999B2Mar 24, 2009
Semiconductor device and method for manufacturing same
PANASONIC CORP133 citations98
US7473929B2Jan 6, 2009
Semiconductor device and method for fabricating the same
PANASONIC CORP23 citations92
US8916967B1Dec 23, 2014
Semiconductor device
PANASONIC CORP7 citations84
US7791308B2Sep 7, 2010
Semiconductor element and electrical apparatus
PANASONIC CORP14 citations84
US7786565B2Aug 31, 2010
Semiconductor apparatus including power semiconductor device constructed by using wide band gap semiconductor
PANASONIC CORP8 citations84
US7709403B2May 4, 2010
Silicon carbide-oxide layered structure, production method thereof, and semiconductor device
PANASONIC CORP11 citations84
US7671409B2Mar 2, 2010
Wide gap semiconductor power device with temperature independent resistivity due to channel region resistivity having negative temperature dependence
PANASONIC CORP18 citations84
US7462540B2Dec 9, 2008
Silicon carbide semiconductor device and process for producing the same
PANASONIC CORP7 citations74
US7964911B2Jun 21, 2011
Semiconductor element and electrical apparatus
PANASONIC CORP4 citations63
US7816688B2Oct 19, 2010
Semiconductor device and production method therefor
PANASONIC CORP2 citations63
US11335839B2May 17, 2022
Group III nitride semiconductor light emitting diode, and method for producing same
PANASONIC CORP0 citations52
US7846828B2Dec 7, 2010
Semiconductor device and method for fabricating the same
PANASONIC CORP1 citations52
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
11 patentsUS6995397B2Feb 7, 2006
Semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD114 citations98
US7230273B2Jun 12, 2007
Semiconductor device with a plurality of semiconductor elements each including a wide band-gap semiconductor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD24 citations93
US6995396B2Feb 7, 2006
Semiconductor substrate, semiconductor device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD25 citations93
US7217954B2May 15, 2007
Silicon carbide semiconductor device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations84
US6940110B2Sep 6, 2005
SiC-MISFET and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD18 citations84
US6580125B2Jun 17, 2003
Semiconductor device and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD18 citations84
US6600203B2Jul 29, 2003
Semiconductor device with silicon carbide suppression layer for preventing extension of micropipe
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations74
US7436031B2Oct 14, 2008
Device for implementing an inverter having a reduced size
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations63
US7381993B2Jun 3, 2008
High-breakdown-voltage insulated gate semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD4 citations63
US7214984B2May 8, 2007
High-breakdown-voltage insulated gate semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3 citations63
US6900483B2May 31, 2005
Semiconductor device and method for manufacturing the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations63
PANASONIC IP MAN CO LTD
3 patentsUS9520344B2Dec 13, 2016
Semiconductor module for electric power
PANASONIC IP MAN CO LTD2 citations63
US10923346B2Feb 16, 2021
Group III nitride semiconductor and method for producing same
PANASONIC IP MAN CO LTD0 citations62
US10763395B2Sep 1, 2020
Light emitting diode element and method for manufacturing same
PANASONIC IP MAN CO LTD0 citations42