P

Inventor

ISHIBASHI AKIHIKO

JP70 patents
⚠️ This page may combine multiple inventors who share the name “ISHIBASHI AKIHIKO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD

42 patents
US6720586B1Apr 13, 2004

Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD98 citations98
US6614059B1Sep 2, 2003

Semiconductor light-emitting device with quantum well

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD91 citations98
US6030849AFeb 29, 2000

Methods of manufacturing semiconductor, semiconductor device and semiconductor substrate

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD66 citations96
US5923950AJul 13, 1999

Method of manufacturing a semiconductor light-emitting device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD55 citations96
US5787104AJul 28, 1998

Semiconductor light emitting element and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD75 citations96
US5751013AMay 12, 1998

Semiconductor light-emitting device and production method thereof

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD72 citations96
US6165812ADec 26, 2000

Gallium nitride compound semiconductor light emitting device and process for producing gallium nitride compound semiconductor

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD70 citations94
US7176115B2Feb 13, 2007

Method of manufacturing Group III nitride substrate and semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD19 citations93
US6911351B2Jun 28, 2005

Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD22 citations93
US6806109B2Oct 19, 2004

Method of fabricating nitride based semiconductor substrate and method of fabricating nitride based semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD22 citations93
US6611005B2Aug 26, 2003

Method for producing semiconductor and semiconductor laser device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD17 citations93
US6518082B1Feb 11, 2003

Method for fabricating nitride semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD23 citations93
US6136626AOct 24, 2000

Semiconductor light-emitting device and production method thereof

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD34 citations93
US6133058AOct 17, 2000

Fabrication of semiconductor light-emitting device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD27 citations93
US5895225AApr 20, 1999

Semiconductor light-emitting device and production method thereof

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD25 citations93
US7368766B2May 6, 2008

Semiconductor light emitting element and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations92
US7030417B2Apr 18, 2006

Semiconductor light emitting device and fabrication method thereof

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD30 citations92
US6867112B1Mar 15, 2005

Method of fabricating nitride semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD17 citations92
US6861672B2Mar 1, 2005

Semiconductor light emitting element and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD18 citations92
US6858877B2Feb 22, 2005

Nitride semiconductor, method for manufacturing the same and nitride semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD22 citations92
US6586774B2Jul 1, 2003

Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD21 citations92
US6466597B1Oct 15, 2002

Semiconductor laser device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD27 citations92
US6326638B1Dec 4, 2001

Semiconductor light emitting element and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD32 citations92
US5923690AJul 13, 1999

Semiconductor laser device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD50 citations90
US7338827B2Mar 4, 2008

Nitride semiconductor laser and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD16 citations84
US7221037B2May 22, 2007

Method of manufacturing group III nitride substrate and semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations84
US7160748B2Jan 9, 2007

Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations84
US6855571B1Feb 15, 2005

Method of producing GaN-based semiconductor laser device and semiconductor substrate used therefor

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations84
US6777253B2Aug 17, 2004

Method for fabricating semiconductor, method for fabricating semiconductor substrate, and semiconductor light emitting device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD16 citations84
US6764871B2Jul 20, 2004

Method for fabricating a nitride semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations84
US6940100B2Sep 6, 2005

Group III-V nitride semiconductor light-emitting device which allows for efficient injection of electrons into an active layer

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations74
US6927149B2Aug 9, 2005

Nitride semiconductor device and fabrication method thereof, and method for forming nitride semiconductor substrate

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD7 citations74
US6667185B2Dec 23, 2003

Method of fabricating nitride semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD10 citations74
US6544869B1Apr 8, 2003

Method and apparatus for depositing semiconductor film and method for fabricating semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations74
US6324200B1Nov 27, 2001

Semiconductor laser device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations74
US6281522B1Aug 28, 2001

Method of manufacturing a semiconductor and a semiconductor light-emitting device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations74
US6265287B1Jul 24, 2001

Method for producing semiconductor layer for a semiconductor laser device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations74
US6072762AJun 6, 2000

Optical disk recording/reproducing method and apparatus for preventing wave length shift during recording and reproducing operations

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations74
US5561080AOct 1, 1996

Semiconductor laser and method for fabricating the same

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD7 citations73
US5546418AAug 13, 1996

Semiconductor laser having a flat groove for selected crystal planes

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations73
US7056756B2Jun 6, 2006

Nitride semiconductor laser device and fabricating method thereof

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3 citations63
US6921678B2Jul 26, 2005

Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device

MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations63

PANASONIC CORP

6 patents

TOSHIBA KK

1 patent

PANASONIC IP MAN CO LTD

1 patent

Showing the top 50 of 70 patents by PatentIndex Score.