Inventor
ISHIBASHI AKIHIKO
JP70 patents
⚠️ This page may combine multiple inventors who share the name “ISHIBASHI AKIHIKO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD
42 patentsUS6720586B1Apr 13, 2004
Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD98 citations98
US6614059B1Sep 2, 2003
Semiconductor light-emitting device with quantum well
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD91 citations98
US6030849AFeb 29, 2000
Methods of manufacturing semiconductor, semiconductor device and semiconductor substrate
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD66 citations96
US5923950AJul 13, 1999
Method of manufacturing a semiconductor light-emitting device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD55 citations96
US5787104AJul 28, 1998
Semiconductor light emitting element and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD75 citations96
US5751013AMay 12, 1998
Semiconductor light-emitting device and production method thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD72 citations96
US6165812ADec 26, 2000
Gallium nitride compound semiconductor light emitting device and process for producing gallium nitride compound semiconductor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD70 citations94
US7176115B2Feb 13, 2007
Method of manufacturing Group III nitride substrate and semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD19 citations93
US6911351B2Jun 28, 2005
Method of fabricating nitride semiconductor, method of fabricating nitride semiconductor device, nitride semiconductor device, semiconductor light emitting device and method of fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD22 citations93
US6806109B2Oct 19, 2004
Method of fabricating nitride based semiconductor substrate and method of fabricating nitride based semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD22 citations93
US6611005B2Aug 26, 2003
Method for producing semiconductor and semiconductor laser device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD17 citations93
US6518082B1Feb 11, 2003
Method for fabricating nitride semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD23 citations93
US6136626AOct 24, 2000
Semiconductor light-emitting device and production method thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD34 citations93
US6133058AOct 17, 2000
Fabrication of semiconductor light-emitting device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD27 citations93
US5895225AApr 20, 1999
Semiconductor light-emitting device and production method thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD25 citations93
US7368766B2May 6, 2008
Semiconductor light emitting element and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations92
US7030417B2Apr 18, 2006
Semiconductor light emitting device and fabrication method thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD30 citations92
US6867112B1Mar 15, 2005
Method of fabricating nitride semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD17 citations92
US6861672B2Mar 1, 2005
Semiconductor light emitting element and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD18 citations92
US6858877B2Feb 22, 2005
Nitride semiconductor, method for manufacturing the same and nitride semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD22 citations92
US6586774B2Jul 1, 2003
Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD21 citations92
US6466597B1Oct 15, 2002
Semiconductor laser device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD27 citations92
US6326638B1Dec 4, 2001
Semiconductor light emitting element and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD32 citations92
US5923690AJul 13, 1999
Semiconductor laser device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD50 citations90
US7338827B2Mar 4, 2008
Nitride semiconductor laser and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD16 citations84
US7221037B2May 22, 2007
Method of manufacturing group III nitride substrate and semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations84
US7160748B2Jan 9, 2007
Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations84
US6855571B1Feb 15, 2005
Method of producing GaN-based semiconductor laser device and semiconductor substrate used therefor
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations84
US6777253B2Aug 17, 2004
Method for fabricating semiconductor, method for fabricating semiconductor substrate, and semiconductor light emitting device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD16 citations84
US6764871B2Jul 20, 2004
Method for fabricating a nitride semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations84
US6940100B2Sep 6, 2005
Group III-V nitride semiconductor light-emitting device which allows for efficient injection of electrons into an active layer
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11 citations74
US6927149B2Aug 9, 2005
Nitride semiconductor device and fabrication method thereof, and method for forming nitride semiconductor substrate
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD7 citations74
US6667185B2Dec 23, 2003
Method of fabricating nitride semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD10 citations74
US6544869B1Apr 8, 2003
Method and apparatus for depositing semiconductor film and method for fabricating semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD8 citations74
US6324200B1Nov 27, 2001
Semiconductor laser device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD13 citations74
US6281522B1Aug 28, 2001
Method of manufacturing a semiconductor and a semiconductor light-emitting device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD6 citations74
US6265287B1Jul 24, 2001
Method for producing semiconductor layer for a semiconductor laser device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations74
US6072762AJun 6, 2000
Optical disk recording/reproducing method and apparatus for preventing wave length shift during recording and reproducing operations
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD15 citations74
US5561080AOct 1, 1996
Semiconductor laser and method for fabricating the same
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD7 citations73
US5546418AAug 13, 1996
Semiconductor laser having a flat groove for selected crystal planes
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD12 citations73
US7056756B2Jun 6, 2006
Nitride semiconductor laser device and fabricating method thereof
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3 citations63
US6921678B2Jul 26, 2005
Method for fabricating nitride semiconductor, method for fabricating nitride semiconductor device, and nitride semiconductor device
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD2 citations63
PANASONIC CORP
6 patentsUS7501667B2Mar 10, 2009
Nitride semiconductor light-emitting device
PANASONIC CORP16 citations93
US7846820B2Dec 7, 2010
Nitride semiconductor device and process for producing the same
PANASONIC CORP10 citations84
US7524691B2Apr 28, 2009
Method of manufacturing group III nitride substrate
PANASONIC CORP8 citations84
US7470608B2Dec 30, 2008
Semiconductor light emitting device and fabrication method thereof
PANASONIC CORP5 citations63
US8981340B2Mar 17, 2015
Nitride semiconductor device and production method thereof
PANASONIC CORP2 citations62
US8030677B2Oct 4, 2011
Semiconductor light emitting element and method for manufacturing same
PANASONIC CORP2 citations62
TOSHIBA KK
1 patentPANASONIC IP MAN CO LTD
1 patentShowing the top 50 of 70 patents by PatentIndex Score.