Inventor
DENNARD ROBERT H
US87 patents
⚠️ This page may combine multiple inventors who share the name “DENNARD ROBERT H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
37 patentsUS7358166B2Apr 15, 2008
Relaxed, low-defect SGOI for strained Si CMOS applications
IBM62 citations98
US7089515B2Aug 8, 2006
Threshold voltage roll-off compensation using back-gated MOSFET devices for system high-performance and low standby power
IBM135 citations98
US7030481B2Apr 18, 2006
High density chip carrier with integrated passive devices
IBM401 citations98
US6962872B2Nov 8, 2005
High density chip carrier with integrated passive devices
IBM363 citations98
US5540785AJul 30, 1996
Fabrication of defect free silicon on an insulating substrate
IBM106 citations98
US7099216B2Aug 29, 2006
Single cycle read/write/writeback pipeline, full-wordline I/O DRAM architecture with enhanced write and single ended sensing
IBM56 citations96
US5462883AOct 31, 1995
Method of fabricating defect-free silicon on an insulating substrate
IBM81 citations96
US5378943AJan 3, 1995
Low power interface circuit
IBM61 citations96
US5206544AApr 27, 1993
CMOS off-chip driver with reduced signal swing and reduced power supply disturbance
IBM91 citations96
US5198995AMar 30, 1993
Trench-capacitor-one-transistor storage cell and array for dynamic random access memories
IBM71 citations96
US7273785B2Sep 25, 2007
Method to control device threshold of SOI MOSFET's
IBM34 citations93
US7106620B2Sep 12, 2006
Memory cell having improved read stability
IBM32 citations93
US7018873B2Mar 28, 2006
Method of making a device threshold control of front-gate silicon-on-insulator MOSFET using a self-aligned back-gate
IBM46 citations93
US6946373B2Sep 20, 2005
Relaxed, low-defect SGOI for strained Si CMOS applications
IBM24 citations93
US6815296B2Nov 9, 2004
Polysilicon back-gated SOI MOSFET for dynamic threshold voltage control
IBM28 citations93
US6812527B2Nov 2, 2004
Method to control device threshold of SOI MOSFET's
IBM37 citations93
US6664598B1Dec 16, 2003
Polysilicon back-gated SOI MOSFET for dynamic threshold voltage control
IBM40 citations93
US5526319AJun 11, 1996
Memory with adiabatically switched bit lines
IBM36 citations93
US7116594B2Oct 3, 2006
Sense amplifier circuits and high speed latch circuits using gated diodes
IBM23 citations92
US7027326B2Apr 11, 2006
3T1D memory cells using gated diodes and methods of use thereof
IBM30 citations92
US6982897B2Jan 3, 2006
Nondestructive read, two-switch, single-charge-storage device RAM devices
IBM31 citations92
US6426914B1Jul 30, 2002
Floating wordline using a dynamic row decoder and bitline VDD precharge
IBM37 citations92
US6426905B1Jul 30, 2002
High speed DRAM local bit line sense amplifier
IBM50 citations92
US3949381AApr 6, 1976
Differential charge transfer sense amplifier
IBM35 citations89
US6518827B1Feb 11, 2003
Sense amplifier threshold compensation
IBM31 citations88
US9627378B2Apr 18, 2017
Methods of forming FINFETs with locally thinned channels from fins having in-situ doped epitaxial cladding
IBM7 citations84
US9466492B2Oct 11, 2016
Method of lateral oxidation of NFET and PFET high-K gate stacks
IBM9 citations84
US8815684B2Aug 26, 2014
Bulk finFET with super steep retrograde well
IBM12 citations84
US7417288B2Aug 26, 2008
Substrate solution for back gate controlled SRAM with coexisting logic devices
IBM13 citations84
US6999370B2Feb 14, 2006
Low power circuits with small voltage swing transmission, voltage regeneration, and wide bandwidth architecture
IBM12 citations84
US6995376B2Feb 7, 2006
Silicon-on-insulator latch-up pulse-radiation detector
IBM14 citations84
US6370072B1Apr 9, 2002
Low voltage single-input DRAM current-sensing amplifier
IBM19 citations84
US7767546B1Aug 3, 2010
Low cost fabrication of double box back gate silicon-on-insulator wafers with built-in shallow trench isolation in back gate layer
IBM12 citations83
US7242629B2Jul 10, 2007
High speed latch circuits using gated diodes
IBM14 citations83
US4182636AJan 8, 1980
Method of fabricating self-aligned contact vias
IBM25 citations81
US4160987AJul 10, 1979
Field effect transistors with polycrystalline silicon gate self-aligned to both conductive and non-conductive regions and fabrication of integrated circuits containing the transistors
IBM29 citations81
US4095251AJun 13, 1978
Field effect transistors and fabrication of integrated circuits containing the transistors
IBM28 citations79
DENNARD ROBERT H
9 patentsUS8276002B2Sep 25, 2012
Power delivery in a heterogeneous 3-D stacked apparatus
DENNARD ROBERT H46 citations98
US8236661B2Aug 7, 2012
Self-aligned well implant for improving short channel effects control, parasitic capacitance, and junction leakage
DENNARD ROBERT H134 citations98
US8174288B2May 8, 2012
Voltage conversion and integrated circuits with stacked voltage domains
DENNARD ROBERT H31 citations92
US8754672B2Jun 17, 2014
Voltage conversion and integrated circuits with stacked voltage domains
DENNARD ROBERT H10 citations84
US8587063B2Nov 19, 2013
Hybrid double box back gate silicon-on-insulator wafers with enhanced mobility channels
DENNARD ROBERT H8 citations84
US8552500B2Oct 8, 2013
Structure for CMOS ETSOI with multiple threshold voltages and active well bias capability
DENNARD ROBERT H18 citations84
US8492838B2Jul 23, 2013
Isolation structures for SOI devices with ultrathin SOI and ultrathin box
DENNARD ROBERT H6 citations84
US8473762B2Jun 25, 2013
Power delivery in a heterogeneous 3-D stacked apparatus
DENNARD ROBERT H13 citations84
US8248152B2Aug 21, 2012
Switched capacitor voltage converters
DENNARD ROBERT H12 citations84
CAI JIN
3 patentsCHANG LELAND
1 patentShowing the top 50 of 87 patents by PatentIndex Score.