P

Inventor

DENNARD ROBERT H

US87 patents
⚠️ This page may combine multiple inventors who share the name “DENNARD ROBERT H”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

37 patents
US7358166B2Apr 15, 2008

Relaxed, low-defect SGOI for strained Si CMOS applications

IBM62 citations98
US7089515B2Aug 8, 2006

Threshold voltage roll-off compensation using back-gated MOSFET devices for system high-performance and low standby power

IBM135 citations98
US7030481B2Apr 18, 2006

High density chip carrier with integrated passive devices

IBM401 citations98
US6962872B2Nov 8, 2005

High density chip carrier with integrated passive devices

IBM363 citations98
US5540785AJul 30, 1996

Fabrication of defect free silicon on an insulating substrate

IBM106 citations98
US7099216B2Aug 29, 2006

Single cycle read/write/writeback pipeline, full-wordline I/O DRAM architecture with enhanced write and single ended sensing

IBM56 citations96
US5462883AOct 31, 1995

Method of fabricating defect-free silicon on an insulating substrate

IBM81 citations96
US5378943AJan 3, 1995

Low power interface circuit

IBM61 citations96
US5206544AApr 27, 1993

CMOS off-chip driver with reduced signal swing and reduced power supply disturbance

IBM91 citations96
US5198995AMar 30, 1993

Trench-capacitor-one-transistor storage cell and array for dynamic random access memories

IBM71 citations96
US7273785B2Sep 25, 2007

Method to control device threshold of SOI MOSFET's

IBM34 citations93
US7106620B2Sep 12, 2006

Memory cell having improved read stability

IBM32 citations93
US7018873B2Mar 28, 2006

Method of making a device threshold control of front-gate silicon-on-insulator MOSFET using a self-aligned back-gate

IBM46 citations93
US6946373B2Sep 20, 2005

Relaxed, low-defect SGOI for strained Si CMOS applications

IBM24 citations93
US6815296B2Nov 9, 2004

Polysilicon back-gated SOI MOSFET for dynamic threshold voltage control

IBM28 citations93
US6812527B2Nov 2, 2004

Method to control device threshold of SOI MOSFET's

IBM37 citations93
US6664598B1Dec 16, 2003

Polysilicon back-gated SOI MOSFET for dynamic threshold voltage control

IBM40 citations93
US5526319AJun 11, 1996

Memory with adiabatically switched bit lines

IBM36 citations93
US7116594B2Oct 3, 2006

Sense amplifier circuits and high speed latch circuits using gated diodes

IBM23 citations92
US7027326B2Apr 11, 2006

3T1D memory cells using gated diodes and methods of use thereof

IBM30 citations92
US6982897B2Jan 3, 2006

Nondestructive read, two-switch, single-charge-storage device RAM devices

IBM31 citations92
US6426914B1Jul 30, 2002

Floating wordline using a dynamic row decoder and bitline VDD precharge

IBM37 citations92
US6426905B1Jul 30, 2002

High speed DRAM local bit line sense amplifier

IBM50 citations92
US3949381AApr 6, 1976

Differential charge transfer sense amplifier

IBM35 citations89
US6518827B1Feb 11, 2003

Sense amplifier threshold compensation

IBM31 citations88
US9627378B2Apr 18, 2017

Methods of forming FINFETs with locally thinned channels from fins having in-situ doped epitaxial cladding

IBM7 citations84
US9466492B2Oct 11, 2016

Method of lateral oxidation of NFET and PFET high-K gate stacks

IBM9 citations84
US8815684B2Aug 26, 2014

Bulk finFET with super steep retrograde well

IBM12 citations84
US7417288B2Aug 26, 2008

Substrate solution for back gate controlled SRAM with coexisting logic devices

IBM13 citations84
US6999370B2Feb 14, 2006

Low power circuits with small voltage swing transmission, voltage regeneration, and wide bandwidth architecture

IBM12 citations84
US6995376B2Feb 7, 2006

Silicon-on-insulator latch-up pulse-radiation detector

IBM14 citations84
US6370072B1Apr 9, 2002

Low voltage single-input DRAM current-sensing amplifier

IBM19 citations84
US7767546B1Aug 3, 2010

Low cost fabrication of double box back gate silicon-on-insulator wafers with built-in shallow trench isolation in back gate layer

IBM12 citations83
US7242629B2Jul 10, 2007

High speed latch circuits using gated diodes

IBM14 citations83
US4182636AJan 8, 1980

Method of fabricating self-aligned contact vias

IBM25 citations81
US4160987AJul 10, 1979

Field effect transistors with polycrystalline silicon gate self-aligned to both conductive and non-conductive regions and fabrication of integrated circuits containing the transistors

IBM29 citations81
US4095251AJun 13, 1978

Field effect transistors and fabrication of integrated circuits containing the transistors

IBM28 citations79

DENNARD ROBERT H

9 patents

CAI JIN

3 patents

CHANG LELAND

1 patent

Showing the top 50 of 87 patents by PatentIndex Score.