Inventor

DOMENICUCCI ANTHONY G

US35 patents

⚠️ This page may combine multiple inventors who share the name “DOMENICUCCI ANTHONY G”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

DOMENICUCCI ANTHONY G

IBM

Relaxed, low-defect SGOI for strained Si CMOS applications

Ultra-thin, high quality strained silicon-on-insulator formed by elastic strain transfer

High performance strained silicon FinFETs device and method for forming same

Relaxed, low-defect SGOI for strained Si CMOS applications

Titanium polycide stabilization with a porous barrier

Method for forming an atomically flat interface for a highly disordered metal-silicon barrier film

Capping layer for improved silicide formation in narrow semiconductor structures

Controlling internal thermal oxidation and eliminating deep divots in SIMOX by chlorine-based annealing

Reducing dislocation formation in semiconductor devices through targeted carbon implantation

High-quality SGOI by annealing near the alloy melting point

High-quality SGOI by oxidation near the alloy melting temperature

High-quality SGOI by oxidation near the alloy melting temperature

Defect reduction by oxidation of silicon

Electron holography method

Electron microscope magnification standard providing precise calibration in the magnification range 5000X-2000,000X

Flat interface for a metal-silicon contract barrier film

Flat interface for a metal-silicon contact barrier film

Method of silicide formation by adding graded amount of impurity during metal deposition

Structure and method to form a thermally stable silicide in narrow dimension gate stacks

Defect reduction by oxidation of silicon

High-quality SGOI by annealing near the alloy melting point

Semiconductor heterostructure including a substantially relaxed, low defect density SiGe layer

Ultra-thin, high quality strained silicon-on-insulator formed by elastic strain transfer

System and method for improving spatial resolution of electron holography

Method of reducing stacking faults through annealing

Method for enhanced uni-directional diffusion of metal and subsequent silicide formation

Process for manufacturing a contact barrier

Transmission electron microscopy sample preparation method for electron holography

Surface roughness improvement of SIMOX substrates by controlling orientation of angle of starting material

Decoder for a stationary switch machine

Programmable precision resistor and method of programming the same

Process for manufacturing a contact barrier

DOMENICUCCI ANTHONY G

Method of fabricating a device using low temperature anneal processes, a device and design structure

Method of fabricating a device using low temperature anneal processes, a device and design structure

AGNELLO PAUL D

Relaxed low-defect SGOI for strained SI CMOS applications