Inventor
WEN TSAI-YU
TW25 patents
⚠️ This page may combine multiple inventors who share the name “WEN TSAI-YU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNITED MICROELECTRONICS CORP
23 patentsUS8853060B1Oct 7, 2014
Epitaxial process
UNITED MICROELECTRONICS CORP44 citations93
US9685533B1Jun 20, 2017
Transistor with SiCN/SiOCN mulitlayer spacer
UNITED MICROELECTRONICS CORP17 citations92
US9431483B1Aug 30, 2016
Nanowire and method of fabricating the same
UNITED MICROELECTRONICS CORP16 citations92
US9379182B1Jun 28, 2016
Method for forming nanowire and semiconductor device formed with the nanowire
UNITED MICROELECTRONICS CORP13 citations84
US9871136B2Jan 16, 2018
Semiconductor device
UNITED MICROELECTRONICS CORP7 citations82
US9859164B1Jan 2, 2018
Method for manufacturing fins
UNITED MICROELECTRONICS CORP5 citations82
US9882022B2Jan 30, 2018
Method for manufacturing transistor with SiCN/SiOCN multilayer spacer
UNITED MICROELECTRONICS CORP2 citations73
US9034705B2May 19, 2015
Method of forming semiconductor device
UNITED MICROELECTRONICS CORP5 citations72
US11791413B2Oct 17, 2023
Semiconductor device and fabrication method thereof
UNITED MICROELECTRONICS CORP0 citations62
US11646349B2May 9, 2023
Structure of semiconductor device
UNITED MICROELECTRONICS CORP0 citations62
US11557654B2Jan 17, 2023
Method for fabricating semiconductor device
UNITED MICROELECTRONICS CORP0 citations62
US11195918B1Dec 7, 2021
Structure of semiconductor device and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations62
US9330902B1May 3, 2016
Method for forming HfOx film based on atomic layer deposition (ALD) process
UNITED MICROELECTRONICS CORP2 citations62
US9117878B2Aug 25, 2015
Method for manufacturing shallow trench isolation
UNITED MICROELECTRONICS CORP3 citations62
US11664425B2May 30, 2023
P-type field effect transistor and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations60
US11271078B2Mar 8, 2022
P-type field effect transistor having channel region with top portion and bottom portion
UNITED MICROELECTRONICS CORP0 citations60
US9735235B2Aug 15, 2017
Nanowire and method of fabricating the same
UNITED MICROELECTRONICS CORP0 citations52
US9653549B2May 16, 2017
Semiconductor device formed with nanowire
UNITED MICROELECTRONICS CORP0 citations52
US11107689B2Aug 31, 2021
Method for fabricating semiconductor device
UNITED MICROELECTRONICS CORP0 citations50
US9947588B1Apr 17, 2018
Method for manufacturing fins
UNITED MICROELECTRONICS CORP0 citations50
US12501694B2Dec 16, 2025
Semiconductor device and method for forming the same
UNITED MICROELECTRONICS CORP0 citations49
US10651275B2May 12, 2020
P-type field effect transistor and method for fabricating the same
UNITED MICROELECTRONICS CORP0 citations49
US9349599B1May 24, 2016
Method for fabricating semiconductor device
UNITED MICROELECTRONICS CORP0 citations48