P

Inventor

WEN TSAI-YU

TW25 patents
⚠️ This page may combine multiple inventors who share the name “WEN TSAI-YU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

UNITED MICROELECTRONICS CORP

23 patents
US8853060B1Oct 7, 2014

Epitaxial process

UNITED MICROELECTRONICS CORP44 citations93
US9685533B1Jun 20, 2017

Transistor with SiCN/SiOCN mulitlayer spacer

UNITED MICROELECTRONICS CORP17 citations92
US9431483B1Aug 30, 2016

Nanowire and method of fabricating the same

UNITED MICROELECTRONICS CORP16 citations92
US9379182B1Jun 28, 2016

Method for forming nanowire and semiconductor device formed with the nanowire

UNITED MICROELECTRONICS CORP13 citations84
US9871136B2Jan 16, 2018

Semiconductor device

UNITED MICROELECTRONICS CORP7 citations82
US9859164B1Jan 2, 2018

Method for manufacturing fins

UNITED MICROELECTRONICS CORP5 citations82
US9882022B2Jan 30, 2018

Method for manufacturing transistor with SiCN/SiOCN multilayer spacer

UNITED MICROELECTRONICS CORP2 citations73
US9034705B2May 19, 2015

Method of forming semiconductor device

UNITED MICROELECTRONICS CORP5 citations72
US11791413B2Oct 17, 2023

Semiconductor device and fabrication method thereof

UNITED MICROELECTRONICS CORP0 citations62
US11646349B2May 9, 2023

Structure of semiconductor device

UNITED MICROELECTRONICS CORP0 citations62
US11557654B2Jan 17, 2023

Method for fabricating semiconductor device

UNITED MICROELECTRONICS CORP0 citations62
US11195918B1Dec 7, 2021

Structure of semiconductor device and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations62
US9330902B1May 3, 2016

Method for forming HfOx film based on atomic layer deposition (ALD) process

UNITED MICROELECTRONICS CORP2 citations62
US9117878B2Aug 25, 2015

Method for manufacturing shallow trench isolation

UNITED MICROELECTRONICS CORP3 citations62
US11664425B2May 30, 2023

P-type field effect transistor and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations60
US11271078B2Mar 8, 2022

P-type field effect transistor having channel region with top portion and bottom portion

UNITED MICROELECTRONICS CORP0 citations60
US9735235B2Aug 15, 2017

Nanowire and method of fabricating the same

UNITED MICROELECTRONICS CORP0 citations52
US9653549B2May 16, 2017

Semiconductor device formed with nanowire

UNITED MICROELECTRONICS CORP0 citations52
US11107689B2Aug 31, 2021

Method for fabricating semiconductor device

UNITED MICROELECTRONICS CORP0 citations50
US9947588B1Apr 17, 2018

Method for manufacturing fins

UNITED MICROELECTRONICS CORP0 citations50
US12501694B2Dec 16, 2025

Semiconductor device and method for forming the same

UNITED MICROELECTRONICS CORP0 citations49
US10651275B2May 12, 2020

P-type field effect transistor and method for fabricating the same

UNITED MICROELECTRONICS CORP0 citations49
US9349599B1May 24, 2016

Method for fabricating semiconductor device

UNITED MICROELECTRONICS CORP0 citations48

Chen jia-jia

1 patent

WEN TSAI-YU

1 patent