Inventor
YANG I-CHEN
TW34 patents
⚠️ This page may combine multiple inventors who share the name “YANG I-CHEN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
24 patentsUS10879266B1Dec 29, 2020
Semiconductor device and operating method thereof
MACRONIX INT CO LTD4 citations73
US10763273B2Sep 1, 2020
Vertical GAA flash memory including two-transistor memory cells
MACRONIX INT CO LTD4 citations73
US9858995B1Jan 2, 2018
Method for operating a memory device
MACRONIX INT CO LTD4 citations70
US7799638B2Sep 21, 2010
Method for forming a memory array
MACRONIX INT CO LTD2 citations63
US11823751B2Nov 21, 2023
Memory device and operation method thereof
MACRONIX INT CO LTD0 citations62
US11758724B2Sep 12, 2023
Memory device with memory string comprising segmented memory portions and method for fabricating the same
MACRONIX INT CO LTD0 citations62
US9324789B1Apr 26, 2016
Memory device and method for fabricating the same
MACRONIX INT CO LTD2 citations62
US8748963B1Jun 10, 2014
Non-volatile memory and manufacturing method thereof
MACRONIX INT CO LTD2 citations62
US7826262B2Nov 2, 2010
Operation method of nitride-based flash memory and method of reducing coupling interference
MACRONIX INT CO LTD4 citations62
US10886405B2Jan 5, 2021
Semiconductor structure
MACRONIX INT CO LTD0 citations61
US12176058B2Dec 24, 2024
Memory device having switching device of page buffer and erase method thereof
MACRONIX INT CO LTD0 citations59
US11177000B2Nov 16, 2021
Non-volatile memory and operating method thereof
MACRONIX INT CO LTD0 citations52
US9978457B1May 22, 2018
Method for operating memory array
MACRONIX INT CO LTD0 citations52
US9281195B2Mar 8, 2016
Semiconductor structure
MACRONIX INT CO LTD0 citations52
US9208892B2Dec 8, 2015
Operation method of multi-level memory
MACRONIX INT CO LTD0 citations52
US8937347B2Jan 20, 2015
Non-volatile memory
MACRONIX INT CO LTD0 citations52
US12581715B2Mar 17, 2026
Semiconductor device and a method of fabricating the same with increased effective width of the channel without increasing the width of the gate active region
MACRONIX INT CO LTD0 citations51
US11798639B2Oct 24, 2023
Memory device and operation method thereof
MACRONIX INT CO LTD0 citations51
US9460928B2Oct 4, 2016
Method for manufacturing semiconductor devices
MACRONIX INT CO LTD1 citations51
US8004890B2Aug 23, 2011
Operation method of non-volatile memory
MACRONIX INT CO LTD1 citations51
US7898873B2Mar 1, 2011
Window enlargement by selective erase of non-volatile memory cells
MACRONIX INT CO LTD1 citations51
US8014203B2Sep 6, 2011
Memory device and methods for fabricating and operating the same
MACRONIX INT CO LTD0 citations50
US12002522B2Jun 4, 2024
Memory device and operation method thereof
MACRONIX INT CO LTD0 citations49
US9443955B2Sep 13, 2016
Semiconductor device and method for fabricating the same
MACRONIX INT CO LTD0 citations41
TAIWAN SEMICONDUCTOR MFG CO LTD
3 patentsUS10741674B2Aug 11, 2020
Selective silicon growth for gapfill improvement
TAIWAN SEMICONDUCTOR MFG CO LTD2 citations72
US10535751B2Jan 14, 2020
Selective silicon growth for gapfill improvement
TAIWAN SEMICONDUCTOR MFG CO LTD1 citations72
US11107903B2Aug 31, 2021
Selective silicon growth for gapfill improvement
TAIWAN SEMICONDUCTOR MFG CO LTD0 citations62
WU GUAN-WEI
3 patentsUS8338880B2Dec 25, 2012
Flash memory
WU GUAN-WEI4 citations60
US8952484B2Feb 10, 2015
Non-volatile memory having isolation structures in and above a substrate and manufacturing method thereof
WU GUAN-WEI0 citations39
US8411506B2Apr 2, 2013
Non-volatile memory and operating method of memory cell
WU GUAN-WEI0 citations39