Inventor
BARGE THIERRY
FR26 patents
⚠️ This page may combine multiple inventors who share the name “BARGE THIERRY”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SOITEC SILICON ON INSULATOR
20 patentsUS7288418B2Oct 30, 2007
Process for treating substrates for the microelectronics industry, and substrates obtained by this process
SOITEC SILICON ON INSULATOR20 citations91
US7029993B1Apr 18, 2006
Method for treating substrates for microelectronics and substrates obtained according to said method
SOITEC SILICON ON INSULATOR31 citations91
US6902988B2Jun 7, 2005
Method for treating substrates for microelectronics and substrates obtained by said method
SOITEC SILICON ON INSULATOR20 citations91
US7406994B2Aug 5, 2008
Substrate layer cutting device and method
SOITEC SILICON ON INSULATOR17 citations90
US11711065B2Jul 25, 2023
Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device
SOITEC SILICON ON INSULATOR5 citations85
US7189304B2Mar 13, 2007
Substrate layer cutting device and method
SOITEC SILICON ON INSULATOR10 citations82
US10924081B2Feb 16, 2021
Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device
SOITEC SILICON ON INSULATOR1 citations73
US10608610B2Mar 31, 2020
Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device
SOITEC SILICON ON INSULATOR3 citations73
US12272540B2Apr 8, 2025
Method for manufacturing a substrate
SOITEC SILICON ON INSULATOR0 citations62
US12143093B2Nov 12, 2024
Substrate for a temperature-compensated surface acoustic wave device or volume acoustic wave device
SOITEC SILICON ON INSULATOR0 citations62
US11837463B2Dec 5, 2023
Method for manufacturing a substrate
SOITEC SILICON ON INSULATOR0 citations62
US10943778B2Mar 9, 2021
Method for manufacturing a substrate
SOITEC SILICON ON INSULATOR0 citations62
US7235427B2Jun 26, 2007
Method for treating substrates for microelectronics and substrates obtained by said method
SOITEC SILICON ON INSULATOR3 citations61
US12278608B2Apr 15, 2025
Method for manufacturing a substrate for a radiofrequency device
SOITEC SILICON ON INSULATOR0 citations59
US12167694B2Dec 10, 2024
Method for transferring a piezoelectric layer onto a support substrate
SOITEC SILICON ON INSULATOR0 citations59
US11979132B2May 7, 2024
Method for manufacturing a substrate for a radiofrequency filter
SOITEC SILICON ON INSULATOR0 citations59
US11870411B2Jan 9, 2024
Method for manufacturing a substrate for a radiofrequency device
SOITEC SILICON ON INSULATOR1 citations59
US9812371B2Nov 7, 2017
Methods for reducing metal contamination on a surface of a sapphire substrate by plasma treatment
SOITEC SILICON ON INSULATOR0 citations52
US7648888B2Jan 19, 2010
Apparatus and method for splitting substrates
SOITEC SILICON ON INSULATOR0 citations48
US7017570B2Mar 28, 2006
Apparatus and method for splitting substrates
SOITEC SILICON ON INSULATOR1 citations48
COMMISSARIAT ENERGIE ATOMIQUE
2 patentsUS6335258B1Jan 1, 2002
Method for making a thin film on a support and resulting structure including an additional thinning stage before heat treatment causes micro-cavities to separate substrate element
COMMISSARIAT ENERGIE ATOMIQUE174 citations99
US6403450B1Jun 11, 2002
Heat treatment method for semiconductor substrates
COMMISSARIAT ENERGIE ATOMIQUE101 citations97