Inventor
JO GUNHO
US8 patents
Patents
8 patentsUS12356665B2Jul 8, 2025
Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methods
SAMSUNG ELECTRONICS CO LTD2 citations72
US12310106B2May 20, 2025
Devices including stacked nanosheet transistors
SAMSUNG ELECTRONICS CO LTD0 citations62
US11843001B2Dec 12, 2023
Devices including stacked nanosheet transistors
SAMSUNG ELECTRONICS CO LTD0 citations62
US12224314B2Feb 11, 2025
Size-controllable multi-stack semiconductor device and method of manufacturing the same
SAMSUNG ELECTRONICS CO LTD0 citations61
US12550375B2Feb 10, 2026
3D-stacked semiconductor device including gate structure with RMG inner spacer protecting lower work-function metal layer
SAMSUNG ELECTRONICS CO LTD0 citations59
US12255099B2Mar 18, 2025
Methods of forming fin-on-nanosheet transistor stacks
SAMSUNG ELECTRONICS CO LTD0 citations50
US12490502B2Dec 2, 2025
Bipolar junction transistors and P-N junction diodes including stacked nano-semiconductor layers
SAMSUNG ELECTRONICS CO LTD0 citations49
US12463136B2Nov 4, 2025
Integrated circuit devices including backside power rail and methods of forming the same
SAMSUNG ELECTRONICS CO LTD0 citations48