Inventor

HONG BYOUNGHAK

US45 patents

Patents

45 patents

US11670677B2Jun 6, 2023

Crossing multi-stack nanosheet structure and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD6 citations85

US11881455B2Jan 23, 2024

Through silicon buried power rail implemented backside power distribution network semiconductor architecture and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD5 citations84

US12051697B2Jul 30, 2024

Integrated circuit devices including stacked gate structures with different dimensions

SAMSUNG ELECTRONICS CO LTD2 citations73

US11735585B2Aug 22, 2023

Stacked semiconductor device having mirror-symmetric pattern

SAMSUNG ELECTRONICS CO LTD2 citations73

US11664433B2May 30, 2023

Integrated circuit devices including stacked transistors

SAMSUNG ELECTRONICS CO LTD2 citations73

US11605708B2Mar 14, 2023

Integrated circuit devices including a vertical field-effect transistor and methods of forming the same

SAMSUNG ELECTRONICS CO LTD2 citations73

US11502167B2Nov 15, 2022

Semiconductor device having stepped multi-stack transistor structure

SAMSUNG ELECTRONICS CO LTD4 citations73

US12356665B2Jul 8, 2025

Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methods

SAMSUNG ELECTRONICS CO LTD2 citations72

US12170322B2Dec 17, 2024

Devices including stacked nanosheet transistors

SAMSUNG ELECTRONICS CO LTD2 citations72

US11282928B2Mar 22, 2022

Semiconductor devices

SAMSUNG ELECTRONICS CO LTD3 citations72

US12230571B2Feb 18, 2025

Integrated circuit devices including a power rail and methods of forming the same

SAMSUNG ELECTRONICS CO LTD3 citations71

US12125788B2Oct 22, 2024

Through silicon buried power rail implemented backside power distribution network semiconductor architecture and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD2 citations71

US12543347B2Feb 3, 2026

Different diffusion break structures for three-dimensional stacked semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62

US12464818B2Nov 4, 2025

Three-dimensional semiconductor device having vertical misalignment

SAMSUNG ELECTRONICS CO LTD0 citations62

US12376352B2Jul 29, 2025

Integrated circuit devices including a vertical field-effect transistor and methods of forming the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US12317588B2May 27, 2025

Step-stacked nanowire CMOS structure for low power logic device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US12317582B2May 27, 2025

Integrated circuit devices including a metal resistor and methods of forming the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US12310106B2May 20, 2025

Devices including stacked nanosheet transistors

SAMSUNG ELECTRONICS CO LTD0 citations62

US12274092B2Apr 8, 2025

Resistance measuring structures of stacked devices

SAMSUNG ELECTRONICS CO LTD0 citations62

US12243946B2Mar 4, 2025

Integrated circuit devices including a common gate electrode and methods of forming the same

SAMSUNG ELECTRONICS CO LTD0 citations62

US12199152B2Jan 14, 2025

Different diffusion break structures for three-dimensional stacked semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations62

US11355640B1Jun 7, 2022

Hybrid multi-stack semiconductor device including self-aligned channel structure and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD1 citations62

US12224314B2Feb 11, 2025

Size-controllable multi-stack semiconductor device and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations61

US11728388B2Aug 15, 2023

Method for manufacturing a semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations61

US12249603B2Mar 11, 2025

Resistor structures of integrated circuit devices including stacked transistors and methods of forming the same

SAMSUNG ELECTRONICS CO LTD0 citations60

US12550375B2Feb 10, 2026

3D-stacked semiconductor device including gate structure with RMG inner spacer protecting lower work-function metal layer

SAMSUNG ELECTRONICS CO LTD0 citations59

US12211760B2Jan 28, 2025

Integrated circuit devices including a parameter measuring structure and methods of forming the same

SAMSUNG ELECTRONICS CO LTD0 citations54

US12477791B2Nov 18, 2025

Semiconductor device having hybrid channel structure

SAMSUNG ELECTRONICS CO LTD0 citations52

US12272647B2Apr 8, 2025

3D stacked chip that shares power rails

SAMSUNG ELECTRONICS CO LTD0 citations52

US11569232B2Jan 31, 2023

Semiconductor device including self-aligned gate structure and method of manufacturing the same

SAMSUNG ELECTRONICS CO LTD0 citations52

US12144163B2Nov 12, 2024

Selective double diffusion break structures for multi-stack semiconductor device

SAMSUNG ELECTRONICS CO LTD0 citations51

US12364018B2Jul 15, 2025

Limited lateral growth of S/D epi by outer dielectric layer in 3-dimensional stacked device

SAMSUNG ELECTRONICS CO LTD0 citations50

US12255099B2Mar 18, 2025

Methods of forming fin-on-nanosheet transistor stacks

SAMSUNG ELECTRONICS CO LTD0 citations50

US12490502B2Dec 2, 2025

Bipolar junction transistors and P-N junction diodes including stacked nano-semiconductor layers

SAMSUNG ELECTRONICS CO LTD0 citations49

US12588489B2Mar 24, 2026

Integrated circuit devices including stacked elements and methods of forming the same

SAMSUNG ELECTRONICS CO LTD0 citations47

HONG BYOUNGHAK

Patents

Crossing multi-stack nanosheet structure and method of manufacturing the same

Through silicon buried power rail implemented backside power distribution network semiconductor architecture and method of manufacturing the same

Integrated circuit devices including stacked gate structures with different dimensions

Stacked semiconductor device having mirror-symmetric pattern

Integrated circuit devices including stacked transistors

Integrated circuit devices including a vertical field-effect transistor and methods of forming the same

Semiconductor device having stepped multi-stack transistor structure

Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methods

Devices including stacked nanosheet transistors

Semiconductor devices

Integrated circuit devices including a power rail and methods of forming the same

Through silicon buried power rail implemented backside power distribution network semiconductor architecture and method of manufacturing the same

Different diffusion break structures for three-dimensional stacked semiconductor device

Three-dimensional semiconductor device having vertical misalignment

Integrated circuit devices including a vertical field-effect transistor and methods of forming the same

Step-stacked nanowire CMOS structure for low power logic device and method of manufacturing the same

Integrated circuit devices including a metal resistor and methods of forming the same

Devices including stacked nanosheet transistors

Resistance measuring structures of stacked devices

Integrated circuit devices including a common gate electrode and methods of forming the same

Selective single diffusion/electrical barrier

Multi-stack semiconductor device with zebra nanosheet structure

Diode structures of stacked devices and methods of forming the same

Crossing multi-stack nanosheet structure and method of manufacturing the same

Stacked semiconductor device having mirror-symmetric pattern

Three-dimensional semiconductor device having vertical misalignment

Semiconductor device having stepped multi-stack transistor structure

Resistance measuring structures of stacked devices

Devices including stacked nanosheet transistors

Diode structures of stacked devices and methods of forming the same

Different diffusion break structures for three-dimensional stacked semiconductor device

Hybrid multi-stack semiconductor device including self-aligned channel structure and method of manufacturing the same

Size-controllable multi-stack semiconductor device and method of manufacturing the same

Method for manufacturing a semiconductor device

Resistor structures of integrated circuit devices including stacked transistors and methods of forming the same

3D-stacked semiconductor device including gate structure with RMG inner spacer protecting lower work-function metal layer

Integrated circuit devices including a parameter measuring structure and methods of forming the same

Semiconductor device having hybrid channel structure

3D stacked chip that shares power rails

Semiconductor device including self-aligned gate structure and method of manufacturing the same

Selective double diffusion break structures for multi-stack semiconductor device

Limited lateral growth of S/D epi by outer dielectric layer in 3-dimensional stacked device

Methods of forming fin-on-nanosheet transistor stacks

Bipolar junction transistors and P-N junction diodes including stacked nano-semiconductor layers

Integrated circuit devices including stacked elements and methods of forming the same