Inventor
CHENG CHUN-MIN
TW19 patents
⚠️ This page may combine multiple inventors who share the name “CHENG CHUN-MIN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MACRONIX INT CO LTD
15 patentsUS9461063B1Oct 4, 2016
Method for forming a semiconductor structure
MACRONIX INT CO LTD22 citations92
US9911754B1Mar 6, 2018
3D memory structure
MACRONIX INT CO LTD10 citations81
US10388664B2Aug 20, 2019
Integrated circuit device with layered trench conductors
MACRONIX INT CO LTD5 citations71
US9337209B1May 10, 2016
Semiconductor device and method of fabricating the same
MACRONIX INT CO LTD5 citations71
US7879706B2Feb 1, 2011
Memory and manufacturing method thereof
MACRONIX INT CO LTD2 citations62
US12160990B2Dec 3, 2024
Semiconductor structure and method of fabricating the same
MACRONIX INT CO LTD0 citations60
US9224749B1Dec 29, 2015
Method for filling polysilicon gate in semiconductor devices, and semiconductor devices
MACRONIX INT CO LTD2 citations60
US11362101B2Jun 14, 2022
Three dimensional memory device
MACRONIX INT CO LTD0 citations55
US10340283B2Jul 2, 2019
Process for fabricating 3D memory
MACRONIX INT CO LTD0 citations49
US10312253B2Jun 4, 2019
Three-dimensional memory device and method of forming the same
MACRONIX INT CO LTD0 citations49
US10217761B1Feb 26, 2019
Semiconductor structure and manufacturing method thereof
MACRONIX INT CO LTD0 citations48
US9627220B1Apr 18, 2017
Methods of manufacturing semiconductor devices with improved metal gate fill-in for vertical memory cell and devices thereof
MACRONIX INT CO LTD1 citations44
US9337208B2May 10, 2016
Semiconductor memory array with air gaps between adjacent gate structures and method of manufacturing the same
MACRONIX INT CO LTD0 citations39
US9287287B2Mar 15, 2016
Semiconductor device including multi-layer structure
MACRONIX INT CO LTD0 citations39
US10714491B2Jul 14, 2020
Memory device and manufacturing method thereof
MACRONIX INT CO LTD0 citations34