Inventor
CELLER GEORGE K
23 patents
⚠️ This page may combine multiple inventors who share the name “CELLER GEORGE K”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
AT & T BELL LAB
5 patentsUS4497683AFeb 5, 1985
Process for producing dielectrically isolated silicon devices
AT & T BELL LAB119 citations96
US5051326ASep 24, 1991
X-Ray lithography mask and devices made therewith
AT & T BELL LAB51 citations91
US4461670AJul 24, 1984
Process for producing silicon devices
AT & T BELL LAB28 citations90
US4494303AJan 22, 1985
Method of making dielectrically isolated silicon devices
AT & T BELL LAB24 citations80
US4581814AApr 15, 1986
Process for fabricating dielectrically isolated devices utilizing heating of the polycrystalline support layer to prevent substrate deformation
AT & T BELL LAB15 citations71
SOITEC SILICON ON INSULATOR
5 patentsUS7605054B2Oct 20, 2009
Method of forming a device wafer with recyclable support
SOITEC SILICON ON INSULATOR8 citations84
US7585792B2Sep 8, 2009
Relaxation of a strained layer using a molten layer
SOITEC SILICON ON INSULATOR12 citations84
US7968911B2Jun 28, 2011
Relaxation of a strained layer using a molten layer
SOITEC SILICON ON INSULATOR2 citations63
US7605055B2Oct 20, 2009
Wafer with diamond layer
SOITEC SILICON ON INSULATOR5 citations63
US7956436B2Jun 7, 2011
Method of forming a device wafer with recyclable support
SOITEC SILICON ON INSULATOR0 citations52
BELL TELEPHONE LABOR INC
3 patentsUS4406709ASep 27, 1983
Method of increasing the grain size of polycrystalline materials by directed energy-beams
BELL TELEPHONE LABOR INC83 citations94
US4258078AMar 24, 1981
Metallization for integrated circuits
BELL TELEPHONE LABOR INC30 citations92
US4240843ADec 23, 1980
Forming self-guarded p-n junctions by epitaxial regrowth of amorphous regions using selective radiation annealing
BELL TELEPHONE LABOR INC36 citations92
WESTERN ELECTRIC CO
2 patentsAMERICAN TELEPHONE & TELEGRAPH
2 patentsUS4676841AJun 30, 1987
Fabrication of dielectrically isolated devices utilizing buried oxygen implant and subsequent heat treatment at temperatures above 1300° C.
AMERICAN TELEPHONE & TELEGRAPH20 citations82
US4835113AMay 30, 1989
Fabrication of dielectrically isolated devices with buried conductive layers
AMERICAN TELEPHONE & TELEGRAPH13 citations72