Inventor
NISHIKAWA NAOHIRO
JP18 patents
⚠️ This page may combine multiple inventors who share the name “NISHIKAWA NAOHIRO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
RENESAS ELECTRONICS CORP
8 patentsUS10198301B2Feb 5, 2019
Semiconductor device
RENESAS ELECTRONICS CORP1 citations61
US10642768B2May 5, 2020
Semiconductor device and control method of semiconductor device
RENESAS ELECTRONICS CORP0 citations51
US10191872B2Jan 29, 2019
Semiconductor device and control method of semiconductor device
RENESAS ELECTRONICS CORP0 citations51
US10067806B2Sep 4, 2018
Semiconductor device
RENESAS ELECTRONICS CORP0 citations51
US10200741B2Feb 5, 2019
Content output device and program
RENESAS ELECTRONICS CORP0 citations49
US9854295B2Dec 26, 2017
Content output device and program
RENESAS ELECTRONICS CORP0 citations49
US9723355B2Aug 1, 2017
Content output device and program
RENESAS ELECTRONICS CORP0 citations49
US9521450B2Dec 13, 2016
Content output device and program
RENESAS ELECTRONICS CORP0 citations49
SUMITOMO CHEMICAL CO
5 patentsUS8053811B2Nov 8, 2011
Group 3-5 nitride semiconductor multilayer substrate, method for manufacturing group 3-5 nitride semiconductor free-standing subtrate, and semiconductor element
SUMITOMO CHEMICAL CO19 citations92
US9559196B2Jan 31, 2017
Semiconductor wafer, method of producing semiconductor wafer, electronic device, and method of producing electronic device
SUMITOMO CHEMICAL CO2 citations73
US8350292B2Jan 8, 2013
Gallium nitride epitaxial crystal, method for production thereof, and field effect transistor
SUMITOMO CHEMICAL CO2 citations61
US7951685B2May 31, 2011
Method for manufacturing semiconductor epitaxial crystal substrate
SUMITOMO CHEMICAL CO1 citations50
US9761686B2Sep 12, 2017
Semiconductor wafer, method of producing semiconductor wafer, and heterojunction bipolar transistor
SUMITOMO CHEMICAL CO0 citations41