P

Inventor

ABADEER WAGDI W

US71 patents
⚠️ This page may combine multiple inventors who share the name “ABADEER WAGDI W”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

47 patents
US7790524B2Sep 7, 2010

Device and design structures for memory cells in a non-volatile random access memory and methods of fabricating such device structures

IBM248 citations99
US7163851B2Jan 16, 2007

Concurrent Fin-FET and thick-body device fabrication

IBM111 citations99
US5334880AAug 2, 1994

Low voltage programmable storage element

IBM124 citations99
US7790543B2Sep 7, 2010

Device structures for a metal-oxide-semiconductor field effect transistor and methods of fabricating such device structures

IBM80 citations98
US7301210B2Nov 27, 2007

Method and structure to process thick and thin fins and variable fin to fin spacing

IBM65 citations98
US6876035B2Apr 5, 2005

High voltage N-LDMOS transistors having shallow trench isolation region

IBM86 citations98
US7763531B2Jul 27, 2010

Method and structure to process thick and thin fins and variable fin to fin spacing

IBM73 citations96
US6624031B2Sep 23, 2003

Test structure and methodology for semiconductor stress-induced defects and antifuse based on same test structure

IBM62 citations96
US5418738AMay 23, 1995

Low voltage programmable storage element

IBM53 citations96
US7087499B2Aug 8, 2006

Integrated antifuse structure for FINFET and CMOS devices

IBM58 citations95
US8021950B1Sep 20, 2011

Semiconductor wafer processing method that allows device regions to be selectively annealed following back end of the line (BEOL) metal wiring layer formation

IBM20 citations93
US7904658B2Mar 8, 2011

Structure for power-efficient cache memory

IBM27 citations93
US7358823B2Apr 15, 2008

Programmable capacitors and methods of using the same

IBM20 citations93
US7297582B2Nov 20, 2007

Method of forming high voltage N-LDMOS transistors having shallow trench isolation region with drain extensions

IBM36 citations93
US7061308B2Jun 13, 2006

Voltage divider for integrated circuits

IBM20 citations93
US6879021B1Apr 12, 2005

Electronically programmable antifuse and circuits made therewith

IBM43 citations93
US6049213AApr 11, 2000

Method and system for testing the reliability of gate dielectric films

IBM51 citations93
US6140885AOct 31, 2000

On-chip automatic system for impedance matching in very high speed input-output chip interfacing

IBM24 citations92
US6188234B1Feb 13, 2001

Method of determining dielectric time-to-breakdown

IBM22 citations91
US8349697B2Jan 8, 2013

Field effect transistor with air gap dielectric

IBM6 citations84
US7872310B2Jan 18, 2011

Semiconductor structure and system for fabricating an integrated circuit chip

IBM11 citations84
US7466171B2Dec 16, 2008

Voltage detection circuit and circuit for generating a trigger flag signal

IBM10 citations84
US6730552B1May 4, 2004

MOSFET with decoupled halo before extension

IBM14 citations84
US6982591B2Jan 3, 2006

Method and circuit for compensating for tunneling current

IBM15 citations83
US5929667AJul 27, 1999

Method and apparatus for protecting circuits subjected to high voltage

IBM19 citations83
US7573300B2Aug 11, 2009

Current control mechanism for dynamic logic keeper circuits in an integrated circuit and method of regulating same

IBM7 citations74
US7498869B2Mar 3, 2009

Voltage reference circuit for low voltage applications in an integrated circuit

IBM7 citations74
US7253066B2Aug 7, 2007

MOSFET with decoupled halo before extension

IBM8 citations74
US6278339B2Aug 21, 2001

Termination resistance independent system for impedance matching in high speed input-output chip interfacing

IBM9 citations74
US6249193B1Jun 19, 2001

Termination impedance independent system for impedance matching in high speed input-output chip interfacing

IBM7 citations74
US7132325B2Nov 7, 2006

Test structure and methodology for semiconductor stress-induced defects and antifuse based on same test structure

IBM10 citations73
US6770907B2Aug 3, 2004

Test structure and methodology for semiconductor stress-induced defects and antifuse based on same test structure

IBM5 citations73
US7939395B2May 10, 2011

High-voltage SOI MOS device structure and method of fabrication

IBM6 citations63
US7939911B2May 10, 2011

Back-end-of-line resistive semiconductor structures

IBM2 citations63
US7873921B2Jan 18, 2011

Structure for a voltage detection circuit in an integrated circuit and method of generating a trigger flag signal

IBM3 citations63
US7825469B2Nov 2, 2010

Threshold voltage compensation for pixel design of CMOS image sensors

IBM4 citations63
US7791010B2Sep 7, 2010

CMOS image sensor having a third FET device with the gate terminal coupled to the diffusion region of a first FET device, the second terminal coupled to a column signal line, and the first terminal coupled to a row select signal

IBM5 citations63
US7709926B2May 4, 2010

Device structures for active devices fabricated using a semiconductor-on-insulator substrate and design structures for a radiofrequency integrated circuit

IBM3 citations63
US7692130B2Apr 6, 2010

CMOS imaging sensor having a third FET device with a gate terminal coupled to a second diffusion region of a first FET device and a first terminal coupled to a row select signal

IBM2 citations63
US7687883B2Mar 30, 2010

Electronically programmable antifuse and circuits made therewith

IBM3 citations63
US7622946B2Nov 24, 2009

Design structure for an automatic driver/transmission line/receiver impedance matching circuitry

IBM3 citations63
US7477541B2Jan 13, 2009

Memory elements and methods of using the same

IBM5 citations63
US7471114B2Dec 30, 2008

Design structure for a current control mechanism for power networks and dynamic logic keeper circuits

IBM5 citations63
US7262987B2Aug 28, 2007

SRAM cell using tunnel current loading devices

IBM2 citations63
US7215002B2May 8, 2007

Electronically programmable antifuse and circuits made therewith

IBM1 citations63
US7167053B2Jan 23, 2007

Integrated circuit amplifier device and method using FET tunneling gate current

IBM3 citations63
US6917319B1Jul 12, 2005

Digital to analog converter using tunneling current element

IBM5 citations63

ABADEER WAGDI W

2 patents

KAMAL LILIAN

1 patent

Showing the top 50 of 71 patents by PatentIndex Score.