Inventor
CHATTY KIRAN V
US49 patents
⚠️ This page may combine multiple inventors who share the name “CHATTY KIRAN V”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
32 patentsUS7790524B2Sep 7, 2010
Device and design structures for memory cells in a non-volatile random access memory and methods of fabricating such device structures
IBM248 citations99
US7790543B2Sep 7, 2010
Device structures for a metal-oxide-semiconductor field effect transistor and methods of fabricating such device structures
IBM80 citations98
US7301210B2Nov 27, 2007
Method and structure to process thick and thin fins and variable fin to fin spacing
IBM65 citations98
US7763531B2Jul 27, 2010
Method and structure to process thick and thin fins and variable fin to fin spacing
IBM73 citations96
US7087499B2Aug 8, 2006
Integrated antifuse structure for FINFET and CMOS devices
IBM58 citations95
US7203045B2Apr 10, 2007
High voltage ESD power clamp
IBM30 citations92
US8349697B2Jan 8, 2013
Field effect transistor with air gap dielectric
IBM6 citations84
US7138313B2Nov 21, 2006
Method for creating a self-aligned SOI diode by removing a polysilicon gate during processing
IBM13 citations84
US7098513B2Aug 29, 2006
Low trigger voltage, low leakage ESD NFET
IBM11 citations84
US6730552B1May 4, 2004
MOSFET with decoupled halo before extension
IBM14 citations84
US8803276B2Aug 12, 2014
Electrostatic discharge (ESD) device and method of fabricating
IBM6 citations83
US8373956B2Feb 12, 2013
Low leakage electrostatic discharge protection circuit
IBM14 citations83
US7253066B2Aug 7, 2007
MOSFET with decoupled halo before extension
IBM8 citations74
US8354722B2Jan 15, 2013
SCR/MOS clamp for ESD protection of integrated circuits
IBM6 citations73
US8350329B2Jan 8, 2013
Low trigger voltage electrostatic discharge NFET in triple well CMOS technology
IBM6 citations73
US7939395B2May 10, 2011
High-voltage SOI MOS device structure and method of fabrication
IBM6 citations63
US7939911B2May 10, 2011
Back-end-of-line resistive semiconductor structures
IBM2 citations63
US7737498B2Jun 15, 2010
Enhanced stress-retention silicon-on-insulator devices and methods of fabricating enhanced stress retention silicon-on-insulator devices
IBM3 citations63
US7709926B2May 4, 2010
Device structures for active devices fabricated using a semiconductor-on-insulator substrate and design structures for a radiofrequency integrated circuit
IBM3 citations63
US7457086B2Nov 25, 2008
High voltage ESD power clamp
IBM3 citations63
US7167053B2Jan 23, 2007
Integrated circuit amplifier device and method using FET tunneling gate current
IBM3 citations63
US7825475B2Nov 2, 2010
Mixed voltage tolerant input/output electrostatic discharge devices
IBM2 citations59
US10163892B2Dec 25, 2018
Silicon controlled rectifiers (SCR), methods of manufacture and design structures
IBM0 citations52
US8956925B2Feb 17, 2015
Silicon controlled rectifier structure with improved junction breakdown and leakage control
IBM0 citations52
US7977201B2Jul 12, 2011
Methods for forming back-end-of-line resistive semiconductor structures
IBM1 citations52
US7915571B2Mar 29, 2011
On demand circuit function execution employing optical sensing
IBM0 citations52
US7804124B2Sep 28, 2010
Device structures for a memory cell of a non-volatile random access memory and design structures for a non-volatile random access memory
IBM0 citations52
US7790564B2Sep 7, 2010
Methods for fabricating active devices on a semiconductor-on-insulator substrate utilizing multiple depth shallow trench isolations
IBM1 citations52
US7700428B2Apr 20, 2010
Methods of fabricating a device structure for use as a memory cell in a non-volatile random access memory
IBM0 citations52
US7659497B2Feb 9, 2010
On demand circuit function execution employing optical sensing
IBM1 citations52
US8363367B2Jan 29, 2013
Electrical overstress protection circuit
IBM0 citations42
US7005686B1Feb 28, 2006
Mixed voltage tolerant electrostatic discharge protection silicon controlled rectifier with enhanced turn-on time
IBM0 citations39
CAMPI JR JOHN B
4 patentsUS8760827B2Jun 24, 2014
Robust ESD protection circuit, method and design structure for tolerant and failsafe designs
CAMPI JR JOHN B12 citations83
US8299533B2Oct 30, 2012
Vertical NPNP structure in a triple well CMOS process
CAMPI JR JOHN B8 citations83
US8513738B2Aug 20, 2013
ESD field-effect transistor and integrated diffusion resistor
CAMPI JR JOHN B5 citations72
US8634172B2Jan 21, 2014
Silicon controlled rectifier based electrostatic discharge protection circuit with integrated JFETs, method of operation and design structure
CAMPI JR JOHN B1 citations51
CHANG SHUNHUA T
2 patentsABADEER WAGDI W
2 patentsABOU-KHALIL MICHEL J
2 patentsUS8796731B2Aug 5, 2014
Low leakage, low capacitance electrostatic discharge (ESD) silicon controlled recitifer (SCR), methods of manufacture and design structure
ABOU-KHALIL MICHEL J5 citations73
US8906751B2Dec 9, 2014
Silicon controlled rectifiers (SCR), methods of manufacture and design structures
ABOU-KHALIL MICHEL J0 citations52
CHATTY KIRAN V
2 patentsUS8692290B2Apr 8, 2014
Silicon controlled rectifier structure with improved junction breakdown and leakage control
CHATTY KIRAN V0 citations48
US8084822B2Dec 27, 2011
Enhanced stress-retention fin-FET devices and methods of fabricating enhanced stress retention fin-FET devices
CHATTY KIRAN V1 citations48