P

Inventor

CHATTY KIRAN V

US49 patents
⚠️ This page may combine multiple inventors who share the name “CHATTY KIRAN V”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

32 patents
US7790524B2Sep 7, 2010

Device and design structures for memory cells in a non-volatile random access memory and methods of fabricating such device structures

IBM248 citations99
US7790543B2Sep 7, 2010

Device structures for a metal-oxide-semiconductor field effect transistor and methods of fabricating such device structures

IBM80 citations98
US7301210B2Nov 27, 2007

Method and structure to process thick and thin fins and variable fin to fin spacing

IBM65 citations98
US7763531B2Jul 27, 2010

Method and structure to process thick and thin fins and variable fin to fin spacing

IBM73 citations96
US7087499B2Aug 8, 2006

Integrated antifuse structure for FINFET and CMOS devices

IBM58 citations95
US7203045B2Apr 10, 2007

High voltage ESD power clamp

IBM30 citations92
US8349697B2Jan 8, 2013

Field effect transistor with air gap dielectric

IBM6 citations84
US7138313B2Nov 21, 2006

Method for creating a self-aligned SOI diode by removing a polysilicon gate during processing

IBM13 citations84
US7098513B2Aug 29, 2006

Low trigger voltage, low leakage ESD NFET

IBM11 citations84
US6730552B1May 4, 2004

MOSFET with decoupled halo before extension

IBM14 citations84
US8803276B2Aug 12, 2014

Electrostatic discharge (ESD) device and method of fabricating

IBM6 citations83
US8373956B2Feb 12, 2013

Low leakage electrostatic discharge protection circuit

IBM14 citations83
US7253066B2Aug 7, 2007

MOSFET with decoupled halo before extension

IBM8 citations74
US8354722B2Jan 15, 2013

SCR/MOS clamp for ESD protection of integrated circuits

IBM6 citations73
US8350329B2Jan 8, 2013

Low trigger voltage electrostatic discharge NFET in triple well CMOS technology

IBM6 citations73
US7939395B2May 10, 2011

High-voltage SOI MOS device structure and method of fabrication

IBM6 citations63
US7939911B2May 10, 2011

Back-end-of-line resistive semiconductor structures

IBM2 citations63
US7737498B2Jun 15, 2010

Enhanced stress-retention silicon-on-insulator devices and methods of fabricating enhanced stress retention silicon-on-insulator devices

IBM3 citations63
US7709926B2May 4, 2010

Device structures for active devices fabricated using a semiconductor-on-insulator substrate and design structures for a radiofrequency integrated circuit

IBM3 citations63
US7457086B2Nov 25, 2008

High voltage ESD power clamp

IBM3 citations63
US7167053B2Jan 23, 2007

Integrated circuit amplifier device and method using FET tunneling gate current

IBM3 citations63
US7825475B2Nov 2, 2010

Mixed voltage tolerant input/output electrostatic discharge devices

IBM2 citations59
US10163892B2Dec 25, 2018

Silicon controlled rectifiers (SCR), methods of manufacture and design structures

IBM0 citations52
US8956925B2Feb 17, 2015

Silicon controlled rectifier structure with improved junction breakdown and leakage control

IBM0 citations52
US7977201B2Jul 12, 2011

Methods for forming back-end-of-line resistive semiconductor structures

IBM1 citations52
US7915571B2Mar 29, 2011

On demand circuit function execution employing optical sensing

IBM0 citations52
US7804124B2Sep 28, 2010

Device structures for a memory cell of a non-volatile random access memory and design structures for a non-volatile random access memory

IBM0 citations52
US7790564B2Sep 7, 2010

Methods for fabricating active devices on a semiconductor-on-insulator substrate utilizing multiple depth shallow trench isolations

IBM1 citations52
US7700428B2Apr 20, 2010

Methods of fabricating a device structure for use as a memory cell in a non-volatile random access memory

IBM0 citations52
US7659497B2Feb 9, 2010

On demand circuit function execution employing optical sensing

IBM1 citations52
US8363367B2Jan 29, 2013

Electrical overstress protection circuit

IBM0 citations42
US7005686B1Feb 28, 2006

Mixed voltage tolerant electrostatic discharge protection silicon controlled rectifier with enhanced turn-on time

IBM0 citations39

CAMPI JR JOHN B

4 patents

CHANG SHUNHUA T

2 patents

ABADEER WAGDI W

2 patents

ABOU-KHALIL MICHEL J

2 patents

CHATTY KIRAN V

2 patents

INFINEON TECHNOLOGIES AG

1 patent

CHANG SHUNHUA

1 patent

CAMPI JOHN B

1 patent

GLOBALFOUNDRIES INC

1 patent

ABADEER WAGDI

1 patent