P

Inventor

GAUTHIER JR ROBERT J

US253 patents
⚠️ This page may combine multiple inventors who share the name “GAUTHIER JR ROBERT J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

49 patents
US7790524B2Sep 7, 2010

Device and design structures for memory cells in a non-volatile random access memory and methods of fabricating such device structures

IBM248 citations99
US7786535B2Aug 31, 2010

Design structures for high-voltage integrated circuits

IBM249 citations99
US7163851B2Jan 16, 2007

Concurrent Fin-FET and thick-body device fabrication

IBM111 citations99
US6232163B1May 15, 2001

Method of forming a semiconductor diode with depleted polysilicon gate structure

IBM136 citations99
US9281379B1Mar 8, 2016

Gate-all-around fin device

IBM31 citations98
US7790543B2Sep 7, 2010

Device structures for a metal-oxide-semiconductor field effect transistor and methods of fabricating such device structures

IBM80 citations98
US7301210B2Nov 27, 2007

Method and structure to process thick and thin fins and variable fin to fin spacing

IBM65 citations98
US6876035B2Apr 5, 2005

High voltage N-LDMOS transistors having shallow trench isolation region

IBM86 citations98
US6288426B1Sep 11, 2001

Thermal conductivity enhanced semiconductor structures and fabrication processes

IBM87 citations98
US6034388AMar 7, 2000

Depleted polysilicon circuit element and method for producing the same

IBM87 citations98
US6015993AJan 18, 2000

Semiconductor diode with depleted polysilicon gate structure and method

IBM106 citations98
US9818542B2Nov 14, 2017

Gate-all-around fin device

IBM19 citations96
US9590108B2Mar 7, 2017

Gate-all-around fin device

IBM20 citations96
US9397163B2Jul 19, 2016

Gate-all-around fin device

IBM19 citations96
US6646305B2Nov 11, 2003

Grounded body SOI SRAM cell

IBM72 citations96
US6624031B2Sep 23, 2003

Test structure and methodology for semiconductor stress-induced defects and antifuse based on same test structure

IBM62 citations96
US6476445B1Nov 5, 2002

Method and structures for dual depth oxygen layers in silicon-on-insulator processes

IBM75 citations96
US6294419B1Sep 25, 2001

Structure and method for improved latch-up using dual depth STI with impurity implant

IBM61 citations96
US6187617B1Feb 13, 2001

Semiconductor structure having heterogeneous silicide regions and method for forming same

IBM46 citations96
US6144086ANov 7, 2000

Structure for improved latch-up using dual depth STI with impurity implant

IBM84 citations96
US9431388B1Aug 30, 2016

Series-connected nanowire structures

IBM36 citations94
US10381483B2Aug 13, 2019

Gate-all-around fin device

IBM5 citations93
US10147822B2Dec 4, 2018

Gate-all-around fin device

IBM5 citations93
US10090400B2Oct 2, 2018

Gate-all-around fin device

IBM6 citations93
US9978874B2May 22, 2018

Gate-all-around fin device

IBM6 citations93
US9923096B2Mar 20, 2018

Gate-all-around fin device

IBM12 citations93
US9911852B2Mar 6, 2018

Gate-all-around fin device

IBM8 citations93
US8039868B2Oct 18, 2011

Structure and method for an electrostatic discharge (ESD) silicon controlled rectifier (SCR) structure

IBM12 citations93
US7782580B2Aug 24, 2010

Stacked power clamp having a BigFET gate pull-up circuit

IBM25 citations93
US7297582B2Nov 20, 2007

Method of forming high voltage N-LDMOS transistors having shallow trench isolation region with drain extensions

IBM36 citations93
US7276768B2Oct 2, 2007

Semiconductor structures for latch-up suppression and methods of forming such semiconductor structures

IBM30 citations93
US7085113B2Aug 1, 2006

ESD protection power clamp for suppressing ESD events occurring on power supply terminals

IBM31 citations93
US6563176B2May 13, 2003

Asymmetrical semiconductor device for ESD protection

IBM22 citations93
US6512296B1Jan 28, 2003

Semiconductor structure having heterogenous silicide regions having titanium and molybdenum

IBM16 citations93
US6498372B2Dec 24, 2002

Conductive coupling of electrical structures to a semiconductor device located under a buried oxide layer

IBM28 citations93
US6429066B1Aug 6, 2002

Method for producing a polysilicon circuit element

IBM18 citations93
US6420761B1Jul 16, 2002

Asymmetrical semiconductor device for ESD protection

IBM19 citations93
US6387742B2May 14, 2002

Thermal conductivity enhanced semiconductor structures and fabrication processes

IBM18 citations93
US6281593B1Aug 28, 2001

SOI MOSFET body contact and method of fabrication

IBM30 citations93
US6268286B1Jul 31, 2001

Method of fabricating MOSFET with lateral resistor with ballasting

IBM20 citations93
US6256184B1Jul 3, 2001

Method and apparatus for providing electrostatic discharge protection

IBM26 citations93
US6100143AAug 8, 2000

Method of making a depleted poly-silicon edged MOSFET structure

IBM37 citations93
US6049445AApr 11, 2000

Overvoltage and electrostatic discharge protection for a receiver circuit

IBM26 citations93
US5998848ADec 7, 1999

Depleted poly-silicon edged MOSFET structure and method

IBM30 citations93
US7203045B2Apr 10, 2007

High voltage ESD power clamp

IBM30 citations92
US6965503B2Nov 15, 2005

Electro-static discharge protection circuit

IBM27 citations92
US6940130B2Sep 6, 2005

Body contact MOSFET

IBM23 citations92
US6774017B2Aug 10, 2004

Method and structures for dual depth oxygen layers in silicon-on-insulator processes

IBM17 citations92
US6677645B2Jan 13, 2004

Body contact MOSFET

IBM22 citations92

ABOU-KHALIL MICHEL J

1 patent

Showing the top 50 of 253 patents by PatentIndex Score.