Inventor
GAUTHIER JR ROBERT J
US253 patents
⚠️ This page may combine multiple inventors who share the name “GAUTHIER JR ROBERT J”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
IBM
49 patentsUS7790524B2Sep 7, 2010
Device and design structures for memory cells in a non-volatile random access memory and methods of fabricating such device structures
IBM248 citations99
US7786535B2Aug 31, 2010
Design structures for high-voltage integrated circuits
IBM249 citations99
US7163851B2Jan 16, 2007
Concurrent Fin-FET and thick-body device fabrication
IBM111 citations99
US6232163B1May 15, 2001
Method of forming a semiconductor diode with depleted polysilicon gate structure
IBM136 citations99
US9281379B1Mar 8, 2016
Gate-all-around fin device
IBM31 citations98
US7790543B2Sep 7, 2010
Device structures for a metal-oxide-semiconductor field effect transistor and methods of fabricating such device structures
IBM80 citations98
US7301210B2Nov 27, 2007
Method and structure to process thick and thin fins and variable fin to fin spacing
IBM65 citations98
US6876035B2Apr 5, 2005
High voltage N-LDMOS transistors having shallow trench isolation region
IBM86 citations98
US6288426B1Sep 11, 2001
Thermal conductivity enhanced semiconductor structures and fabrication processes
IBM87 citations98
US6034388AMar 7, 2000
Depleted polysilicon circuit element and method for producing the same
IBM87 citations98
US6015993AJan 18, 2000
Semiconductor diode with depleted polysilicon gate structure and method
IBM106 citations98
US9818542B2Nov 14, 2017
Gate-all-around fin device
IBM19 citations96
US9590108B2Mar 7, 2017
Gate-all-around fin device
IBM20 citations96
US9397163B2Jul 19, 2016
Gate-all-around fin device
IBM19 citations96
US6646305B2Nov 11, 2003
Grounded body SOI SRAM cell
IBM72 citations96
US6624031B2Sep 23, 2003
Test structure and methodology for semiconductor stress-induced defects and antifuse based on same test structure
IBM62 citations96
US6476445B1Nov 5, 2002
Method and structures for dual depth oxygen layers in silicon-on-insulator processes
IBM75 citations96
US6294419B1Sep 25, 2001
Structure and method for improved latch-up using dual depth STI with impurity implant
IBM61 citations96
US6187617B1Feb 13, 2001
Semiconductor structure having heterogeneous silicide regions and method for forming same
IBM46 citations96
US6144086ANov 7, 2000
Structure for improved latch-up using dual depth STI with impurity implant
IBM84 citations96
US9431388B1Aug 30, 2016
Series-connected nanowire structures
IBM36 citations94
US10381483B2Aug 13, 2019
Gate-all-around fin device
IBM5 citations93
US10147822B2Dec 4, 2018
Gate-all-around fin device
IBM5 citations93
US10090400B2Oct 2, 2018
Gate-all-around fin device
IBM6 citations93
US9978874B2May 22, 2018
Gate-all-around fin device
IBM6 citations93
US9923096B2Mar 20, 2018
Gate-all-around fin device
IBM12 citations93
US9911852B2Mar 6, 2018
Gate-all-around fin device
IBM8 citations93
US8039868B2Oct 18, 2011
Structure and method for an electrostatic discharge (ESD) silicon controlled rectifier (SCR) structure
IBM12 citations93
US7782580B2Aug 24, 2010
Stacked power clamp having a BigFET gate pull-up circuit
IBM25 citations93
US7297582B2Nov 20, 2007
Method of forming high voltage N-LDMOS transistors having shallow trench isolation region with drain extensions
IBM36 citations93
US7276768B2Oct 2, 2007
Semiconductor structures for latch-up suppression and methods of forming such semiconductor structures
IBM30 citations93
US7085113B2Aug 1, 2006
ESD protection power clamp for suppressing ESD events occurring on power supply terminals
IBM31 citations93
US6563176B2May 13, 2003
Asymmetrical semiconductor device for ESD protection
IBM22 citations93
US6512296B1Jan 28, 2003
Semiconductor structure having heterogenous silicide regions having titanium and molybdenum
IBM16 citations93
US6498372B2Dec 24, 2002
Conductive coupling of electrical structures to a semiconductor device located under a buried oxide layer
IBM28 citations93
US6429066B1Aug 6, 2002
Method for producing a polysilicon circuit element
IBM18 citations93
US6420761B1Jul 16, 2002
Asymmetrical semiconductor device for ESD protection
IBM19 citations93
US6387742B2May 14, 2002
Thermal conductivity enhanced semiconductor structures and fabrication processes
IBM18 citations93
US6281593B1Aug 28, 2001
SOI MOSFET body contact and method of fabrication
IBM30 citations93
US6268286B1Jul 31, 2001
Method of fabricating MOSFET with lateral resistor with ballasting
IBM20 citations93
US6256184B1Jul 3, 2001
Method and apparatus for providing electrostatic discharge protection
IBM26 citations93
US6100143AAug 8, 2000
Method of making a depleted poly-silicon edged MOSFET structure
IBM37 citations93
US6049445AApr 11, 2000
Overvoltage and electrostatic discharge protection for a receiver circuit
IBM26 citations93
US5998848ADec 7, 1999
Depleted poly-silicon edged MOSFET structure and method
IBM30 citations93
US7203045B2Apr 10, 2007
High voltage ESD power clamp
IBM30 citations92
US6965503B2Nov 15, 2005
Electro-static discharge protection circuit
IBM27 citations92
US6940130B2Sep 6, 2005
Body contact MOSFET
IBM23 citations92
US6774017B2Aug 10, 2004
Method and structures for dual depth oxygen layers in silicon-on-insulator processes
IBM17 citations92
US6677645B2Jan 13, 2004
Body contact MOSFET
IBM22 citations92
ABOU-KHALIL MICHEL J
1 patentShowing the top 50 of 253 patents by PatentIndex Score.