P

Inventor

SHI YUN

US80 patents
⚠️ This page may combine multiple inventors who share the name “SHI YUN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

IBM

19 patents
US7790524B2Sep 7, 2010

Device and design structures for memory cells in a non-volatile random access memory and methods of fabricating such device structures

IBM248 citations99
US7790543B2Sep 7, 2010

Device structures for a metal-oxide-semiconductor field effect transistor and methods of fabricating such device structures

IBM80 citations98
US9224858B1Dec 29, 2015

Lateral double-diffused metal oxide semiconductor field effect transistor (LDMOSFET) with a below source isolation region and a method of forming the LDMOSFET

IBM20 citations93
US7999320B2Aug 16, 2011

SOI radio frequency switch with enhanced signal fidelity and electrical isolation

IBM21 citations93
US10050115B2Aug 14, 2018

Tapered gate oxide in LDMOS devices

IBM11 citations84
US8349697B2Jan 8, 2013

Field effect transistor with air gap dielectric

IBM6 citations84
US7670889B2Mar 2, 2010

Structure and method for fabrication JFET in CMOS

IBM12 citations84
US7485965B2Feb 3, 2009

Through via in ultra high resistivity wafer and related methods

IBM10 citations84
US9337310B2May 10, 2016

Low leakage, high frequency devices

IBM5 citations73
US9236449B2Jan 12, 2016

High voltage laterally diffused metal oxide semiconductor

IBM3 citations73
US9059276B2Jun 16, 2015

High voltage laterally diffused metal oxide semiconductor

IBM3 citations63
US8981475B2Mar 17, 2015

Lateral diffusion metal oxide semiconductor (LDMOS)

IBM2 citations63
US8962402B1Feb 24, 2015

Lateral diffusion metal oxide semiconductor (LDMOS) device with tapered drift electrode

IBM3 citations63
US8350338B2Jan 8, 2013

Semiconductor device including high field regions and related method

IBM2 citations63
US8012814B2Sep 6, 2011

Method of forming a high performance fet and a high voltage fet on a SOI substrate

IBM2 citations63
US7939395B2May 10, 2011

High-voltage SOI MOS device structure and method of fabrication

IBM6 citations63
US7939911B2May 10, 2011

Back-end-of-line resistive semiconductor structures

IBM2 citations63
US7804119B2Sep 28, 2010

Device structures with a hyper-abrupt P-N junction, methods of forming a hyper-abrupt P-N junction, and design structures for an integrated circuit

IBM2 citations63
US8912597B2Dec 16, 2014

Semiconductor device including asymmetric lightly doped drain (LDD) region, related method and design structure

IBM2 citations62

SKYWORKS SOLUTIONS INC

6 patents

BOTULA ALAN B

5 patents

GOOGLE LLC

4 patents

GLOBALFOUNDRIES INC

3 patents

BOEING CO

3 patents

CAMILLO-CASTILLO RENATA

2 patents

ABOU-KHALIL MICHEL J

1 patent

ANDERSON FREDERICK G

1 patent

ABADEER WAGDI W

1 patent

DING HANYI

1 patent

ATLAS COPCO AIRPOWER NV

1 patent

CLARK JR WILLIAM F

1 patent

JOHNSON JEFFREY B

1 patent

HANGZHOU LIJIAN DIGITAL TECH CO LTD

1 patent

Showing the top 50 of 80 patents by PatentIndex Score.