Inventor
HWANG JEONG-MO
US13 patents
⚠️ This page may combine multiple inventors who share the name “HWANG JEONG-MO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
TEXAS INSTRUMENTS INC
3 patentsUS5359219AOct 25, 1994
Silicon on insulator device comprising improved substrate doping
TEXAS INSTRUMENTS INC160 citations98
US5567966AOct 22, 1996
Local thinning of channel region for ultra-thin film SOI MOSFET with elevated source/drain
TEXAS INSTRUMENTS INC115 citations97
US5426062AJun 20, 1995
Method for forming a silicon on insulator device
TEXAS INSTRUMENTS INC79 citations95
HYUNDAI ELECTRONICS IND
3 patentsUS6218248B1Apr 17, 2001
Semiconductor device and method for fabricating the same
HYUNDAI ELECTRONICS IND52 citations95
US6337505B2Jan 8, 2002
Semiconductor device and method for fabricating the same
HYUNDAI ELECTRONICS IND17 citations92
US6326252B1Dec 4, 2001
Method for fabricating MOS transistor having dual gate
HYUNDAI ELECTRONICS IND3 citations62
HWANG JEONG-MO
2 patentsUS8222111B1Jul 17, 2012
Simultaneous formation of a top oxide layer in a silicon-oxide-nitride-oxide-silicon (SONOS) transistor and a gate oxide in a metal oxide semiconductor (MOS)
HWANG JEONG-MO13 citations81
US8338211B2Dec 25, 2012
Systems and methods for charging solar cell layers
HWANG JEONG-MO4 citations60
CYPRESS SEMICONDUCTOR CORP
2 patentsUS9583501B1Feb 28, 2017
Simultaneous formation of a top oxide layer in a silicon-oxide-nitride-oxide-silicon (SONOS) transistor and a gate oxide in a metal oxide semiconductor (MOS)
CYPRESS SEMICONDUCTOR CORP0 citations51
US7957192B2Jun 7, 2011
Read and volatile NV standby disturb
CYPRESS SEMICONDUCTOR CORP1 citations51