Inventor
ASABA TETSUO
JP25 patents
⚠️ This page may combine multiple inventors who share the name “ASABA TETSUO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
CANON KK
15 patentsUS5850242ADec 15, 1998
Recording head and recording apparatus and method of manufacturing same
CANON KK66 citations96
US5534069AJul 9, 1996
Method of treating active material
CANON KK47 citations96
US5383970AJan 24, 1995
Chemical vapor deposition method for forming a deposited film with the use of a liquid raw material and apparatus suitable for practicing said method
CANON KK102 citations96
US5569614AOct 29, 1996
Method of forming metal pattern including a schottky diode
CANON KK40 citations95
US5776255AJul 7, 1998
Chemical vapor deposition apparatus
CANON KK43 citations92
US5614439AMar 25, 1997
Method of making a planar wiring in an insulated groove using alkylaluminum hydride
CANON KK23 citations92
US5547708AAug 20, 1996
Chemical vapor deposition method for forming a deposited film with the use of liquid raw material
CANON KK15 citations74
US6156657ADec 5, 2000
Method of treating active material
CANON KK11 citations73
US5963812AOct 5, 1999
Manufacturing method of a semiconductor apparatus having an electron donative surface in a side wall portion
CANON KK10 citations73
US5364802ANov 15, 1994
Method of making a semiconductor device with buried electrode
CANON KK14 citations73
US6128052AOct 3, 2000
Semiconductor device applicable for liquid crystal display device, and process for its fabrication
CANON KK15 citations72
US5975685ANov 2, 1999
Ink jet recording head having an oriented p-n junction diode, and recording apparatus using the head
CANON KK4 citations63
US5534453AJul 9, 1996
Method of manufacturing titanium silicide containing semiconductors
CANON KK5 citations63
US5580808ADec 3, 1996
Method of manufacturing a ROM device having contact holes treated with hydrogen atoms and energy beam
CANON KK2 citations62
US5306934AApr 26, 1994
Semiconductor device with buried electrode
CANON KK0 citations51
SAMSUNG ELECTRONICS CO LTD
9 patentsUS7256381B2Aug 14, 2007
Driving an image sensor with reduced area and high image quality
SAMSUNG ELECTRONICS CO LTD55 citations96
US7414233B2Aug 19, 2008
Pixel circuit with surface doped region between multiple transfer transistors and image sensor including the same
SAMSUNG ELECTRONICS CO LTD25 citations92
US7750281B2Jul 6, 2010
CMOS image sensor with current mirror
SAMSUNG ELECTRONICS CO LTD13 citations84
US7521661B2Apr 21, 2009
Driving an image sensor with reduced area and high image quality
SAMSUNG ELECTRONICS CO LTD8 citations84
US7508429B2Mar 24, 2009
Solid-state image-sensing device for averaging sub-sampled analog signals and method of driving the same
SAMSUNG ELECTRONICS CO LTD10 citations83
US7521659B2Apr 21, 2009
Driving an image sensor with reduced area and high image quality
SAMSUNG ELECTRONICS CO LTD7 citations73
US7888715B2Feb 15, 2011
Active pixel sensor with coupled gate transfer transistor
SAMSUNG ELECTRONICS CO LTD5 citations63
US7679112B2Mar 16, 2010
Color image sensors having pixels with cyan-type and yellow-type color characteristics therein
SAMSUNG ELECTRONICS CO LTD5 citations63
US7652707B2Jan 26, 2010
Pixel circuit with reduced wiring
SAMSUNG ELECTRONICS CO LTD2 citations63