Inventor

MASZARA WITOLD

US16 patents

⚠️ This page may combine multiple inventors who share the name “MASZARA WITOLD”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

ADVANCED MICRO DEVICES INC

8 patents

US6599831B1Jul 29, 2003

Metal gate electrode using silicidation and method of formation thereof

ADVANCED MICRO DEVICES INC40 citations92

US6492209B1Dec 10, 2002

Selectively thin silicon film for creating fully and partially depleted SOI on same wafer

ADVANCED MICRO DEVICES INC28 citations92

US6399452B1Jun 4, 2002

Method of fabricating transistors with low thermal budget

ADVANCED MICRO DEVICES INC28 citations92

US5965917AOct 12, 1999

Structure and method of formation of body contacts in SOI MOSFETS to elimate floating body effects

ADVANCED MICRO DEVICES INC66 citations91

US6873030B2Mar 29, 2005

Metal gate electrode using silicidation and method of formation thereof

ADVANCED MICRO DEVICES INC6 citations74

US6274915B1Aug 14, 2001

Method of improving MOS device performance by controlling degree of depletion in the gate electrode

ADVANCED MICRO DEVICES INC6 citations62

US6284608B1Sep 4, 2001

Method for making accumulation mode N-channel SOI

ADVANCED MICRO DEVICES INC2 citations56

US6787436B1Sep 7, 2004

Silicide-silicon contacts for reduction of MOSFET source-drain resistances

ADVANCED MICRO DEVICES INC0 citations52

MASZARA WITOLD

5 patents

US8466034B2Jun 18, 2013

Thin body semiconductor devices having improved contact resistance and methods for the fabrication thereof

MASZARA WITOLD2 citations61

US8334177B2Dec 18, 2012

Methods for forming isolated fin structures on bulk semiconductor material

MASZARA WITOLD2 citations60

GLOBAL FOUNDRIES INC

1 patent

US7871873B2Jan 18, 2011

Method of forming fin structures using a sacrificial etch stop layer on bulk semiconductor material

GLOBAL FOUNDRIES INC23 citations92

KAWASAKI HIROHISA

1 patent

US8859389B2Oct 14, 2014

Methods of making fins and fin field effect transistors (FinFETs)

KAWASAKI HIROHISA20 citations87

GLOBALFOUNDRIES INC

1 patent

US8828839B2Sep 9, 2014

Methods for fabricating electrically-isolated finFET semiconductor devices

GLOBALFOUNDRIES INC15 citations82

MASZARA WITOLD

ADVANCED MICRO DEVICES INC

Metal gate electrode using silicidation and method of formation thereof

Selectively thin silicon film for creating fully and partially depleted SOI on same wafer

Method of fabricating transistors with low thermal budget

Structure and method of formation of body contacts in SOI MOSFETS to elimate floating body effects

Metal gate electrode using silicidation and method of formation thereof

Method of improving MOS device performance by controlling degree of depletion in the gate electrode

Method for making accumulation mode N-channel SOI

Silicide-silicon contacts for reduction of MOSFET source-drain resistances

MASZARA WITOLD

Method of manufacturing a finned semiconductor device structure

Methods for forming isolated fin structures on bulk semiconductor material

Methods for forming isolated fin structures on bulk semiconductor material

Thin body semiconductor devices having improved contact resistance and methods for the fabrication thereof

Methods for forming isolated fin structures on bulk semiconductor material

GLOBAL FOUNDRIES INC

Method of forming fin structures using a sacrificial etch stop layer on bulk semiconductor material

KAWASAKI HIROHISA

Methods of making fins and fin field effect transistors (FinFETs)

GLOBALFOUNDRIES INC

Methods for fabricating electrically-isolated finFET semiconductor devices