P

Inventor

JINBO TOSHIKATSU

JP44 patents
⚠️ This page may combine multiple inventors who share the name “JINBO TOSHIKATSU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

NEC CORP

29 patents
US6175264B1Jan 16, 2001

Charge pump for generating negative voltage without change of threshold due to undesirable back-gate biasing effect

NEC CORP61 citations96
US5305273AApr 19, 1994

Semiconductor memory device

NEC CORP60 citations96
US6456534B2Sep 24, 2002

Method for controlling a flash memory erase operation and flash memory erase operation controller

NEC CORP21 citations92
US6339549B1Jan 15, 2002

Semiconductor storage apparatus having main bit line and sub bit line

NEC CORP32 citations92
US6198685B1Mar 6, 2001

Word-line driving circuit and semiconductor memory device

NEC CORP40 citations92
US5966043AOct 12, 1999

Power supply switching circuit

NEC CORP22 citations92
US5821805AOct 13, 1998

Charge pump circuit having different threshold biases of the transistors

NEC CORP45 citations92
US5675535AOct 7, 1997

Sense amplifier having a high operation speed and a low power consumption

NEC CORP21 citations92
US5526309AJun 11, 1996

Flash memory device having high speed erase mode and method for performing the erase mode

NEC CORP21 citations92
US5448518ASep 5, 1995

Virtual ground type nonvolatile semiconductor memory device capable of simultaneously accessing two memory cells

NEC CORP31 citations92
US5295106AMar 15, 1994

Row decoding circuit

NEC CORP49 citations92
US4982113AJan 1, 1991

Signal distributing unit for various input signals different in voltage level

NEC CORP23 citations92
US5931563AAug 3, 1999

Method and device for erasing non-volatile semiconductor memory with smaller erase variation

NEC CORP13 citations74
US5907506AMay 25, 1999

Erasing method and erasing device for non-volatile semiconductor memory

NEC CORP14 citations74
US5862079AJan 19, 1999

Method and device for erasing non-volatile semiconductor memory with smaller erase variation

NEC CORP7 citations74
US5313086AMay 17, 1994

Semiconductor device

NEC CORP7 citations74
US5301149AApr 5, 1994

Data read-out circuit for semiconductor memory device

NEC CORP19 citations74
US5276371AJan 4, 1994

Output buffer having high resistance against electrostatic breakdown

NEC CORP7 citations74
US5239211AAug 24, 1993

Output buffer circuit

NEC CORP14 citations74
US4962482AOct 9, 1990

Nonvolatile memory device using a sense circuit including variable threshold transistors

NEC CORP15 citations74
US4947378AAug 7, 1990

Memory element exchange control circuit capable of automatically refreshing a defective address

NEC CORP20 citations74
US6163171ADec 19, 2000

Pull-up and pull-down circuit

NEC CORP6 citations63
US6064089AMay 16, 2000

Semiconductor device

NEC CORP3 citations63
US5267207ANov 30, 1993

Electrically programmable read only memory device with reliable sense amplifier circuit

NEC CORP3 citations63
US4947056AAug 7, 1990

MOSFET for producing a constant voltage

NEC CORP5 citations63
US4876462AOct 24, 1989

Control circuit for multipurpose input terminal

NEC CORP6 citations63
US4868788ASep 19, 1989

Semiconductor memory device with improved word line drive circuit

NEC CORP6 citations63
US5998831ADec 7, 1999

Non-volatile semiconductor memory device

NEC CORP3 citations62
US5808940ASep 15, 1998

Nonvolatile semiconductor memory

NEC CORP2 citations62

NEC ELECTRONICS CORP

7 patents

RENESAS ELECTRONICS CORP

5 patents

JINBO TOSHIKATSU

3 patents