Inventor

RYOO KYUNG-CHANG

KR21 patents

⚠️ This page may combine multiple inventors who share the name “RYOO KYUNG-CHANG”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

RYOO KYUNG-CHANG

SAMSUNG ELECTRONICS CO LTD

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

Phase-change memory device having a barrier layer and manufacturing method

PRAMS having phase-change layer pattern with electrode contact area and methods of forming the same

Neuromophic system and configuration method thereof

Phase-change memory device

Resistive memory device

Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same

Phase change memory devices having dual lower electrodes

Phase changeable memory device and method of formation thereof

Phase-changeable memory devices having reduced susceptibility to thermal interference

Variable resistance memory device and a variable resistance memory system including the same

Computing system generating map data, and method of operating the same

Wear leveling for storage or memory device

Phase change memory and method of fabricating the same

Storage device, memory device, and computing system including the same

System and method of host and storage device path selection by memory device

Method of operating resistive memory device capable of reducing write latency

Methods of forming phase-change memory units, and methods of manufacturing phase-change memory devices using the same

SONG YOON-JONG

Phase change memory

Phase change memory devices having dual lower electrodes and methods of fabricating the same

OH JEONG-HOON

Semiconductor devices and methods of driving the same