Inventor
PARK BYUNG-GOOK
KR69 patents
⚠️ This page may combine multiple inventors who share the name “PARK BYUNG-GOOK”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
18 patentsUS7646041B2Jan 12, 2010
Non-volatile memory devices including vertical channels, methods of operating, and methods of fabricating the same
SAMSUNG ELECTRONICS CO LTD59 citations98
US7005349B2Feb 28, 2006
Method of manufacturing twin-ONO-type SONOS memory using reverse self-alignment process
SAMSUNG ELECTRONICS CO LTD48 citations96
US7564084B2Jul 21, 2009
Dual-gate dynamic random access memory device having vertical channel transistors and method of fabricating the same
SAMSUNG ELECTRONICS CO LTD32 citations92
US10014219B2Jul 3, 2018
Semiconductor device
SAMSUNG ELECTRONICS CO LTD4 citations84
US9583583B2Feb 28, 2017
Semiconductor device with nanowires in different regions at different heights
SAMSUNG ELECTRONICS CO LTD10 citations84
US9219119B2Dec 22, 2015
Semiconductor device with nanowires in different regions at different heights and fabricating method thereof
SAMSUNG ELECTRONICS CO LTD11 citations84
US7906397B2Mar 15, 2011
Methods of fabricating nonvolatile semiconductor memory devices including a plurality of stripes having impurity layers therein
SAMSUNG ELECTRONICS CO LTD7 citations84
US7525146B2Apr 28, 2009
Nonvolatile semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD10 citations84
US7511334B2Mar 31, 2009
Twin-ONO-type SONOS memory
SAMSUNG ELECTRONICS CO LTD15 citations84
US7439574B2Oct 21, 2008
Silicon/oxide/nitride/silicon nonvolatile memory with vertical channels
SAMSUNG ELECTRONICS CO LTD8 citations74
US9461054B2Oct 4, 2016
Semiconductor devices having vertical device and non-vertical device and methods of forming the same
SAMSUNG ELECTRONICS CO LTD3 citations73
US11482522B2Oct 25, 2022
Semiconductor devices including a narrow active pattern
SAMSUNG ELECTRONICS CO LTD2 citations71
US7928501B2Apr 19, 2011
Semiconductor device and methods of forming and operating the same
SAMSUNG ELECTRONICS CO LTD2 citations62
US9634093B2Apr 25, 2017
Method for fabricating semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations52
US9343549B2May 17, 2016
Semiconductor device and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US8354708B2Jan 15, 2013
Methods of forming and operating semiconductor device
SAMSUNG ELECTRONICS CO LTD0 citations52
US7838365B2Nov 23, 2010
SONOS memory device having curved surface and method for fabricating the same
SAMSUNG ELECTRONICS CO LTD0 citations52
US12118458B2Oct 15, 2024
Inference method and device using spiking neural network
SAMSUNG ELECTRONICS CO LTD0 citations51
UNIV SEOUL NAT R & DB FOUND
6 patentsUS9799706B2Oct 24, 2017
Resistive random access memory device embedding tunnel insulating layer and memory array using the same and fabrication method thereof
UNIV SEOUL NAT R & DB FOUND6 citations84
US8867280B2Oct 21, 2014
3D stacked NAND flash memory array enabling to operate by LSM and operation method thereof
UNIV SEOUL NAT R & DB FOUND10 citations83
US9165242B2Oct 20, 2015
Synaptic semiconductor device and operation method thereof
UNIV SEOUL NAT R & DB FOUND15 citations82
US9036419B2May 19, 2015
3D stacked NAND flash memory array having SSL status check buildings for monitoring threshold voltages of string selection transistors and methods for monitoring and operating the same
UNIV SEOUL NAT R & DB FOUND6 citations68
US8878251B2Nov 4, 2014
Silicon-compatible compound junctionless field effect transistor
UNIV SEOUL NAT R & DB FOUND3 citations59
US9412462B2Aug 9, 2016
3D stacked memory array and method for determining threshold voltages of string selection transistors
UNIV SEOUL NAT R & DB FOUND1 citations52
SEOUL NAT UNIV IND FOUNDATION
5 patentsUS7432552B2Oct 7, 2008
Body biasing structure of SOI
SEOUL NAT UNIV IND FOUNDATION53 citations89
US6800511B2Oct 5, 2004
Method for fabricating semiconductor device with negative differential conductance or transconductance
SEOUL NAT UNIV IND FOUNDATION11 citations74
US7502262B2Mar 10, 2009
NAND type flash memory array and method for operating the same
SEOUL NAT UNIV IND FOUNDATION3 citations63
US7615821B2Nov 10, 2009
Charge trap memory with avalanche generation inducing layer
SEOUL NAT UNIV IND FOUNDATION4 citations62
US7863643B2Jan 4, 2011
Memory cell device having vertical channel and double gate structure
SEOUL NAT UNIV IND FOUNDATION0 citations52
PARK BYUNG-GOOK
4 patentsUS9136363B2Sep 15, 2015
Compound tunneling field effect transistor integrated on silicon substrate and method for fabricating the same
PARK BYUNG-GOOK9 citations80
US8786004B2Jul 22, 2014
3D stacked array having cut-off gate line and fabrication method thereof
PARK BYUNG-GOOK5 citations71
US8394698B2Mar 12, 2013
NAND flash memory array with cut-off gate line and methods for operating and fabricating the same
PARK BYUNG-GOOK4 citations60
US9111843B2Aug 18, 2015
LED display apparatus having active devices and fabrication method thereof
PARK BYUNG-GOOK2 citations52
SEOUL NAT UNIV R&DB FOUNDATION
4 patentsUS10741760B2Aug 11, 2020
Resistive random access memory device for 3D stack and memory array using the same and fabrication method thereof
SEOUL NAT UNIV R&DB FOUNDATION2 citations72
US12154017B2Nov 26, 2024
Integrated circuit emulating neural system with neuron circuit and synapse device array and fabrication method thereof
SEOUL NAT UNIV R&DB FOUNDATION0 citations62
US11275999B2Mar 15, 2022
Neural networks using cross-point array and pattern readout method thereof
SEOUL NAT UNIV R&DB FOUNDATION0 citations61
US12419053B2Sep 16, 2025
Semi-conductor device having double-gate and method for setting synapse weight of target semi-conductor device within neural network
SEOUL NAT UNIV R&DB FOUNDATION0 citations53
HYUNDAI ELECTRONICS IND
3 patentsUS6335245B2Jan 1, 2002
Method for fabricating single electron transistor
HYUNDAI ELECTRONICS IND22 citations93
US6211013B1Apr 3, 2001
Method for fabricating single electron transistor
HYUNDAI ELECTRONICS IND20 citations93
US6420234B1Jul 16, 2002
Short channel length transistor and method of fabricating the same
HYUNDAI ELECTRONICS IND15 citations84
PARK BYUNG GOOK
2 patentsSK HYNIX INC
2 patentsSUN MIN-CHUL
1 patentKOREA INFORMATION & COMMUNICAT
1 patentSONG KI-WHAN
1 patentSEOUL NAT UNIVERSITY FOUNDATIO
1 patentOH JEONG-HOON
1 patentKWON DAE-WOONG
1 patentShowing the top 50 of 69 patents by PatentIndex Score.