Inventor
CHOI KI-HWAN
KR41 patents
⚠️ This page may combine multiple inventors who share the name “CHOI KI-HWAN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SAMSUNG ELECTRONICS CO LTD
32 patentsUS10034630B2Jul 31, 2018
Apparatus and method to train autonomous driving model, and autonomous driving apparatus
SAMSUNG ELECTRONICS CO LTD64 citations97
US6233198B1May 15, 2001
High density flash memory device with improved row decoding structure
SAMSUNG ELECTRONICS CO LTD61 citations96
US6137729AOct 24, 2000
Method for erasing memory cells in a flash memory device
SAMSUNG ELECTRONICS CO LTD64 citations96
US5986947ANov 16, 1999
Charge pump circuits having floating wells
SAMSUNG ELECTRONICS CO LTD64 citations96
US7778084B2Aug 17, 2010
Non-volatile memory devices and operating methods thereof
SAMSUNG ELECTRONICS CO LTD49 citations94
US6407944B1Jun 18, 2002
Method for protecting an over-erasure of redundant memory cells during test for high-density nonvolatile memory semiconductor devices
SAMSUNG ELECTRONICS CO LTD17 citations93
US6249461B1Jun 19, 2001
Flash memory device with a status read operation
SAMSUNG ELECTRONICS CO LTD35 citations93
US6222772B1Apr 24, 2001
Methods of performing sector erase operations on non-volatile semiconductor memory devices
SAMSUNG ELECTRONICS CO LTD27 citations93
US6914827B2Jul 5, 2005
Flash memory device capable of preventing an over-erase of flash memory cells and erase method thereof
SAMSUNG ELECTRONICS CO LTD25 citations92
US6577540B2Jun 10, 2003
Flash memory device capable of preventing an over-erase of flash memory cells and erase method thereof
SAMSUNG ELECTRONICS CO LTD24 citations92
US6314027B1Nov 6, 2001
Flash memory device capable of preventing an over-erasure of flash memory cells and erase method thereof
SAMSUNG ELECTRONICS CO LTD31 citations92
US7489558B2Feb 10, 2009
Program method of flash memory capable of compensating read margin reduced due to charge loss
SAMSUNG ELECTRONICS CO LTD12 citations84
US7366020B2Apr 29, 2008
Flash memory device capable of preventing an overerase of flash memory cells and erase method thereof
SAMSUNG ELECTRONICS CO LTD18 citations84
US6442071B2Aug 27, 2002
Non-volatile semiconductor memory device with improved erase algorithm
SAMSUNG ELECTRONICS CO LTD18 citations84
US10489684B2Nov 26, 2019
Image processing apparatus and method based on deep learning and neural network learning
SAMSUNG ELECTRONICS CO LTD8 citations83
US8385120B2Feb 26, 2013
Method of programming a nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD9 citations82
US10133938B2Nov 20, 2018
Apparatus and method for object recognition and for training object recognition model
SAMSUNG ELECTRONICS CO LTD10 citations81
US6492832B2Dec 10, 2002
Methods for testing a group of semiconductor devices simultaneously, and devices amenable to such methods of testing
SAMSUNG ELECTRONICS CO LTD9 citations74
US6483747B2Nov 19, 2002
Method for protecting an over-erasure of redundant memory cells during test for high-density nonvolatile memory semiconductor devices
SAMSUNG ELECTRONICS CO LTD6 citations74
US6151250ANov 21, 2000
Flash memory device and verify method thereof
SAMSUNG ELECTRONICS CO LTD11 citations74
US6064596AMay 16, 2000
Nonvolatile integrated circuit memory devices and methods of operating same
SAMSUNG ELECTRONICS CO LTD8 citations74
US9524782B2Dec 20, 2016
Nonvolatile memory device and method of writing data in nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD4 citations73
US11341375B2May 24, 2022
Image processing apparatus and method based on deep learning and neural network learning
SAMSUNG ELECTRONICS CO LTD2 citations72
US7760551B2Jul 20, 2010
Method of programming nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD4 citations63
US7190624B2Mar 13, 2007
Flash memory device capable of preventing an over-erase of flash memory cells and erase method thereof
SAMSUNG ELECTRONICS CO LTD5 citations63
US6483759B1Nov 19, 2002
Methods for testing a group of semiconductor devices simultaneously, and devices amenable to such methods of testing
SAMSUNG ELECTRONICS CO LTD2 citations63
US8018781B2Sep 13, 2011
Method of operating nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD0 citations52
US7554386B2Jun 30, 2009
High voltage generation circuit and method for reducing peak current and power noise for a semiconductor memory device
SAMSUNG ELECTRONICS CO LTD1 citations52
US5940326AAug 17, 1999
Method for erasing data stored in a nonvolatile memory device
SAMSUNG ELECTRONICS CO LTD1 citations52
US10791979B2Oct 6, 2020
Apparatus and method to train autonomous driving model, and autonomous driving apparatus
SAMSUNG ELECTRONICS CO LTD0 citations51
US10681270B2Jun 9, 2020
Electronic device for creating panoramic image or motion picture and method for the same
SAMSUNG ELECTRONICS CO LTD0 citations48
US10339675B2Jul 2, 2019
Tomography apparatus and method for reconstructing tomography image thereof
SAMSUNG ELECTRONICS CO LTD0 citations41