Inventor
AIHARA KEN
JP12 patents
Patents
12 patentsUS6478883B1Nov 12, 2002
Silicon single crystal wafer, epitaxial silicon wafer, and methods for producing them
SHINETSU HANDOTAI KK84 citations97
US6544656B1Apr 8, 2003
Production method for silicon wafer and silicon wafer
SHINETSU HANDOTAI KK127 citations96
US6548035B1Apr 15, 2003
Silicon single crystal wafer for epitaxial wafer, epitaxial wafer, and methods for producing the same and evaluating the same
SHINETSU HANDOTAI KK30 citations92
US6264906B1Jul 24, 2001
Method for heat treatment of silicon substrate, substrate treated by the method, and epitaxial wafer utilizing the substrate
SHINETSU HANDOTAI KK17 citations92
US6206961B1Mar 27, 2001
Method of determining oxygen precipitation behavior in a silicon monocrystal
SHINETSU HANDOTAI KK24 citations92
US6143071ANov 7, 2000
Method for heat treatment of silicon substrate, substrate treated by the method, and epitaxial wafer utilizing the substrate
SHINETSU HANDOTAI KK31 citations92
US6162708ADec 19, 2000
Method for producing an epitaxial silicon single crystal wafer and the epitaxial silicon single crystal wafer
SHINETSU HANDOTAI KK47 citations91
US7189293B2Mar 13, 2007
Method of producing annealed wafer and annealed wafer
SHINETSU HANDOTAI KK7 citations73
US7078357B2Jul 18, 2006
Method for manufacturing silicon wafer and silicon wafer
SHINETSU HANDOTAI KK7 citations71
US6479312B1Nov 12, 2002
Gallium phosphide luminescent device
SHINETSU HANDOTAI KK7 citations70
US5533387AJul 9, 1996
Method of evaluating silicon wafers
SHINETSU HANDOTAI KK6 citations62
US7713851B2May 11, 2010
Method of manufacturing silicon epitaxial wafer
SHINETSU HANDOTAI KK1 citations48