Inventor · disambiguated record
Ronald W. Grundbacher
Also filed as: GRUNDBACHER RONALD · GRUNDBACHER RONALD W
9 granted patents·152 citations·filing 2000–2013
87Inventor score
Top patents by PatentIndex Score
9 records- 0192US6515316B1Partially relaxed channel HEMT deviceTRW INC·Filed 2000·Granted Feb 4, 2003·93 cites·9 claims
- 0278US6452221B1Enhancement mode deviceTRW INC·Filed 2000·Granted Sep 17, 2002·26 cites·10 claims
- 0372US6524899B1Process for forming a large area, high gate current HEMT diodeTRW INC·Filed 2000·Granted Feb 25, 2003·15 cites·11 claims
- 0467US7411226B2High electron mobility transistor (HEMT) structure with refractory gate metalNORTHROP GRUMMAN CORP·Filed 2005·Granted Aug 12, 2008·5 cites·12 claims
- 0555US6383826B1Method for determining etch depthTRW INC·Filed 2000·Granted May 7, 2002·6 cites·2 claims
- 0654US6710379B2Fully relaxed channel HEMT deviceNORTHROP GRUMMAN CORP·Filed 2003·Granted Mar 23, 2004·6 cites·2 claims
- 0742US6569763B1Method to separate a metal film from an insulating film in a semiconductor device using adhesive tapeNORTHROP GRUMMAN CORP·Filed 2002·Granted May 27, 2003·1 cites·13 claims
- 0832US9048184B2Method of forming a gate contactNAMBA CAROL O·Filed 2013·Granted Jun 2, 2015·0 cites·16 claims
- 0932US6396679B1Single-layer dielectric structure with rounded corners, and circuits including such structuresTRW INC·Filed 2000·Granted May 28, 2002·0 cites·12 claims
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