Inventor
HARSHFIELD STEVEN T
US37 patents
⚠️ This page may combine multiple inventors who share the name “HARSHFIELD STEVEN T”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
MICRON TECHNOLOGY INC
30 patentsUS6607974B2Aug 19, 2003
Method of forming a contact structure in a semiconductor device
MICRON TECHNOLOGY INC295 citations99
US6563156B2May 13, 2003
Memory elements and methods for making same
MICRON TECHNOLOGY INC343 citations99
US6455424B1Sep 24, 2002
Selective cap layers over recessed polysilicon plugs
MICRON TECHNOLOGY INC124 citations99
US6440837B1Aug 27, 2002
Method of forming a contact structure in a semiconductor device
MICRON TECHNOLOGY INC317 citations99
US6420725B1Jul 16, 2002
Method and apparatus for forming an integrated circuit electrode having a reduced contact area
MICRON TECHNOLOGY INC547 citations99
US6117720ASep 12, 2000
Method of making an integrated circuit electrode having a reduced contact area
MICRON TECHNOLOGY INC627 citations99
US6077729AJun 20, 2000
Memory array having a multi-state element and method for forming such array or cellis thereof
MICRON TECHNOLOGY INC625 citations99
US6031287AFeb 29, 2000
Contact structure and memory element incorporating the same
MICRON TECHNOLOGY INC865 citations99
US5869843AFeb 9, 1999
Memory array having a multi-state element and method for forming such array or cells thereof
MICRON TECHNOLOGY INC671 citations99
US5851882ADec 22, 1998
ZPROM manufacture and design and methods for forming thin structures using spacers as an etching mask
MICRON TECHNOLOGY INC168 citations99
US5818749AOct 6, 1998
Integrated circuit memory device
MICRON TECHNOLOGY INC315 citations99
US5612558AMar 18, 1997
Hemispherical grained silicon on refractory metal nitride
MICRON TECHNOLOGY INC111 citations99
US7687793B2Mar 30, 2010
Resistance variable memory cells
MICRON TECHNOLOGY INC69 citations98
US6111264AAug 29, 2000
Small pores defined by a disposable internal spacer for use in chalcogenide memories
MICRON TECHNOLOGY INC417 citations98
US5814527ASep 29, 1998
Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories
MICRON TECHNOLOGY INC560 citations98
US7071021B2Jul 4, 2006
PCRAM memory cell and method of making same
MICRON TECHNOLOGY INC34 citations96
US5646879AJul 8, 1997
Zener programmable read only memory
MICRON TECHNOLOGY INC42 citations96
US7271440B2Sep 18, 2007
Method and apparatus for forming an integrated circuit electrode having a reduced contact area
MICRON TECHNOLOGY INC14 citations93
US6831330B2Dec 14, 2004
Method and apparatus for forming an integrated circuit electrode having a reduced contact area
MICRON TECHNOLOGY INC22 citations93
US6440795B1Aug 27, 2002
Hemispherical grained silicon on conductive nitride
MICRON TECHNOLOGY INC18 citations93
US5899725AMay 4, 1999
Method of forming a hemispherical grained silicon on refractory metal nitride
MICRON TECHNOLOGY INC28 citations93
US7235419B2Jun 26, 2007
Method of making a memory cell
MICRON TECHNOLOGY INC11 citations84
US7687796B2Mar 30, 2010
Method and apparatus for forming an integrated circuit electrode having a reduced contact area
MICRON TECHNOLOGY INC3 citations74
US7504730B2Mar 17, 2009
Memory elements
MICRON TECHNOLOGY INC3 citations74
US7078755B2Jul 18, 2006
Memory cell with selective deposition of refractory metals
MICRON TECHNOLOGY INC6 citations74
US6413812B1Jul 2, 2002
Methods for forming ZPROM using spacers as an etching mask
MICRON TECHNOLOGY INC13 citations74
US6187631B1Feb 13, 2001
Hemispherical grained silicon on conductive nitride
MICRON TECHNOLOGY INC9 citations74
US5719418AFeb 17, 1998
Contact-substrate for a semiconductor device comprising a contour
MICRON TECHNOLOGY INC12 citations74
US6077740AJun 20, 2000
Method for forming a semiconductor device contact structure comprising a contour
MICRON TECHNOLOGY INC3 citations63
USRE40842EJul 14, 2009
Memory elements and methods for making same
MICRON TECHNOLOGY INC0 citations52
ROUND ROCK RES LLC
3 patentsUS8362625B2Jan 29, 2013
Contact structure in a memory device
ROUND ROCK RES LLC2 citations63
US8786101B2Jul 22, 2014
Contact structure in a memory device
ROUND ROCK RES LLC0 citations52
US8017453B2Sep 13, 2011
Method and apparatus for forming an integrated circuit electrode having a reduced contact area
ROUND ROCK RES LLC0 citations52