Inventor

WEIMER RONALD A

US96 patents

⚠️ This page may combine multiple inventors who share the name “WEIMER RONALD A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WEIMER RONALD A

MICRON TECHNOLOGY INC

Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces

Method for forming flash memory device having a tunnel dielectric comprising nitrided oxide

Films doped with carbon for use in integrated circuit technology

Nucleation for improved flash erase characteristics

Forming a conductive structure in a semiconductor device

Use of dilute steam ambient for improvement of flash devices

Transistor devices, and methods of forming transistor devices and circuit devices

Method of fabricating an integrated circuit with a dielectric layer exposed to a hydrogen-bearing nitrogen source

Ammonia gas passivation on nitride encapsulated devices

Semiconductor device with barrier layer

Forming a conductive structure in a semiconductor device

Films doped with carbon for use in integrated circuit technology

DRAM capacitors made from silicon-germanium and electrode-limited conduction dielectric films

Method of forming hemispherical grained silicon

Double sided container process used during the manufacture of a semiconductor device

Use of selective oxidation conditions for dielectric conditioning

Double sided container process used during the manufacture of a semiconductor device

Method for processing wafers in a semiconductor fabrication system

DRAM capacitors made from silicon-germanium and electrode-limited conduction dielectric films

Memory cells, electronic systems, methods of forming memory cells, and methods of programming memory cells

Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers

Methods of forming transistor devices and capacitor constructions

System and device including a barrier layer

Method of manufacturing devices comprising conductive nano-dots, and devices comprising same

CMOS constructions

Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces

Forming a conductive structure in a semiconductor device

Method for forming a barrier layer

Method of forming polysilicon having a desired surface roughness

Method of forming polysilicon having a desired surface roughness

Methods for forming small-scale capacitor structures

Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers

Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition

Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces

Use of atomic oxygen process for improved barrier layer

Use of dilute steam ambient for improvement of flash devices

Films doped with carbon for use in integrated circuit technology

Use of selective oxidation conditions for dielectric conditioning

Method of selective oxidation conditions for dielectric conditioning

Methods of forming non-volatile memory cells, and methods of forming NAND cell unit string gates

Methods and systems for controlling temperature during microfeature workpiece processing, E.G. CVD deposition

Method of improved high K dielectric-polysilicon interface for CMOS devices

Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces

Single substrate annealing of magnetoresistive structure

Process of forming an electrically erasable programmable read only memory with an oxide layer exposed to hydrogen and nitrogen

Films doped with carbon for use in integrated circuit technology

QLOGIC CORP

Method and system for signal equalization in communication between computing devices

Method and system for communication with peripheral devices

MICRON TECHNOLOGIES INC

Method for forming hemispherical grained silicon

MIN KYU S

Memory cells containing charge-trapping zones