Inventor

KO KEI-YU

US24 patents

⚠️ This page may combine multiple inventors who share the name “KO KEI-YU”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KO KEI-YU

MICRON TECHNOLOGY INC

Etchant with selectivity for doped silicon dioxide over undoped silicon dioxide and silicon nitride, processes which employ the etchant, and structures formed thereby

Undoped silicon dioxide as etch stop for selective etch of doped silicon dioxide

Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes

Undoped silicon dioxide as etch mask for patterning of doped silicon dioxide

Method of forming a self aligned contact opening

Self-aligned contact (SAC) etch with dual-chemistry process

Method of etching doped silicon dioxide with selectivity to undoped silicon dioxide with a high density plasma etcher

Semiconductor device having a substrate, an undoped silicon oxide structure, and an overlying doped silicon oxide structure with a side wall terminating at the undoped silicon oxide structure

Semiconductor etching methods

Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes

Process variation resistant self aligned contact etch

Method of forming a self-aligned contact opening

Etchant gas composition

Gate stack structure

Semiconductor structure having a plurality of gate stacks

Etching methods

Gas compositions

Semiconductor device having a substrate an undoped silicon oxide structure and an overlaying doped silicon oxide structure with a sidewall terminating at the undoped silicon oxide structure

Etchant with selectivity for doped silicon dioxide over undoped silicon dioxide and silicon nitride, processes which employ the etchant, and structures formed thereby

Etchant with selectivity for doped silicon dioxide over undoped silicon dioxide and silicon nitride, processes which employ the etchant, and structures formed thereby

Method of etching doped silicon dioxide with selectivity to undoped silicon dioxide with a high density plasma etcher

Etchant with selectivity for doped silicon dioxide over undoped silicon dioxide and silicon nitride, processes which employ the etchant, and structures formed thereby

EASTMAN KODAK CO

Isolation region in a group III-V semiconductor device and method of making the same

APPLIED MATERIALS INC

Process chamber having tunable showerhead and tunable liner