Inventor
SPOSILI ROBERT S
US19 patents
⚠️ This page may combine multiple inventors who share the name “SPOSILI ROBERT S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
UNIV COLUMBIA
10 patentsUS6555449B1Apr 29, 2003
Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication
UNIV COLUMBIA167 citations99
US6908835B2Jun 21, 2005
Method and system for providing a single-scan, continuous motion sequential lateral solidification
UNIV COLUMBIA103 citations98
US6830993B1Dec 14, 2004
Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
UNIV COLUMBIA79 citations98
US6635554B1Oct 21, 2003
Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures
UNIV COLUMBIA105 citations98
US6573531B1Jun 3, 2003
Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures
UNIV COLUMBIA121 citations98
US7319056B2Jan 15, 2008
Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification
UNIV COLUMBIA43 citations96
US7029996B2Apr 18, 2006
Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification
UNIV COLUMBIA60 citations96
US7679028B2Mar 16, 2010
Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification
UNIV COLUMBIA10 citations92
US7220660B2May 22, 2007
Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
UNIV COLUMBIA17 citations92
US7704862B2Apr 27, 2010
Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method
UNIV COLUMBIA5 citations74
SHARP LAB OF AMERICA INC
4 patentsUS6881686B1Apr 19, 2005
Low-fluence irradiation for lateral crystallization enabled by a heating source
SHARP LAB OF AMERICA INC8 citations74
US7608144B2Oct 27, 2009
Pulse sequencing lateral growth method
SHARP LAB OF AMERICA INC3 citations63
US7056843B2Jun 6, 2006
Low-fluence irradiation for lateral crystallization enabled by a heating source
SHARP LAB OF AMERICA INC1 citations63
US7018468B2Mar 28, 2006
Process for long crystal lateral growth in silicon films by UV and IR pulse sequencing
SHARP LAB OF AMERICA INC3 citations63
IM JAMES S
3 patentsUS8278659B2Oct 2, 2012
Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon
IM JAMES S5 citations74
US8859436B2Oct 14, 2014
Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon
IM JAMES S0 citations52
US8680427B2Mar 25, 2014
Uniform large-grained and gain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon
IM JAMES S0 citations52