Inventor
CANDELIER PHILIPPE
FR21 patents
⚠️ This page may combine multiple inventors who share the name “CANDELIER PHILIPPE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
ST MICROELECTRONICS SA
18 patentsUS6421293B1Jul 16, 2002
One-time programmable memory cell in CMOS technology
ST MICROELECTRONICS SA93 citations97
US7333362B2Feb 19, 2008
Electrically erasable and programmable, non-volatile semiconductor memory device having a single layer of gate material, and corresponding memory plane
ST MICROELECTRONICS SA24 citations89
US7675106B2Mar 9, 2010
Non-volatile reprogrammable memory
ST MICROELECTRONICS SA8 citations81
US7567464B2Jul 28, 2009
Non-volatile memory device with periodic refresh and method of programming such a device
ST MICROELECTRONICS SA15 citations79
US11164647B2Nov 2, 2021
Electronic chip memory
ST MICROELECTRONICS SA2 citations71
US11250930B2Feb 15, 2022
Electronic chip memory
ST MICROELECTRONICS SA2 citations70
US9881928B2Jan 30, 2018
Method for producing one-time-programmable memory cells and corresponding integrated circuit
ST MICROELECTRONICS SA3 citations68
US6977840B2Dec 20, 2005
Storage element with a defined number of write cycles
ST MICROELECTRONICS SA2 citations62
US6351407B1Feb 26, 2002
Differential one-time programmable memory cell structure in CMOS technology
ST MICROELECTRONICS SA5 citations62
US7502985B2Mar 10, 2009
Method of detecting and correcting errors for a memory and corresponding integrated circuit
ST MICROELECTRONICS SA3 citations61
US11355503B2Jun 7, 2022
Electronic chip memory
ST MICROELECTRONICS SA0 citations60
US7184299B2Feb 27, 2007
Nonvolatile SRAM memory cell
ST MICROELECTRONICS SA4 citations60
US7504683B2Mar 17, 2009
Integrated electronic circuit incorporating a capacitor
ST MICROELECTRONICS SA3 citations59
US9406372B2Aug 2, 2016
Secure non-volatile memory
ST MICROELECTRONICS SA2 citations55
US7289355B2Oct 30, 2007
Pre-written volatile memory cell
ST MICROELECTRONICS SA0 citations51
US9589968B2Mar 7, 2017
Method for producing one-time-programmable memory cells and corresponding integrated circuit
ST MICROELECTRONICS SA0 citations48
US9564242B2Feb 7, 2017
Method for controlling the breakdown of an antifuse memory cell
ST MICROELECTRONICS SA0 citations46
US9142318B2Sep 22, 2015
Method for controlling the breakdown of an antifuse memory cell
ST MICROELECTRONICS SA0 citations43