Inventor

CROWDER MARK A

US33 patents

⚠️ This page may combine multiple inventors who share the name “CROWDER MARK A”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

CROWDER MARK A

SHARP LAB OF AMERICA INC

Laser annealing mask and method for smoothing an annealed surface

Sub-resolutional laser annealing mask

Recessed-gate thin-film transistor with self-aligned lightly doped drain

Isotropic polycrystalline silicon

Thin film structure from LILAC annealing

Apparatus for performing anastomosis

Isotropic polycrystalline silicon and method for producing same

Low-fluence irradiation for lateral crystallization enabled by a heating source

Method for reducing surface protrusions in the fabrication of lilac films

Method for suppressing energy spikes of a partially-coherent beam using triangular end-regions

Variable quality semiconductor film substrate

Symmetrical mask system and method for laser irradiation

Substrate and method for producing variable quality substrate material

Nanowire transistor and method for forming same

Core-shell-shell nanowire transistor and fabrication method

Pulse sequencing lateral growth method

Low-fluence irradiation for lateral crystallization enabled by a heating source

Process for long crystal lateral growth in silicon films by UV and IR pulse sequencing

Method of suppressing energy spikes of a partially-coherent beam

UNIV COLUMBIA

Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication

Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method

Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures

Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures

Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification

Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification

Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidification

Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method

Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method

IM JAMES S

Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon

Uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon

Uniform large-grained and gain boundary location manipulated polycrystalline thin film semiconductors formed using sequential lateral solidification and devices formed thereon

SHARP LABRATORIES OF AMERICA INC

Self-aligned lightly doped drain recessed-gate thin-film transistor

CROWDER MARK A

Core-shell-shell nanowire transistor