Inventor

KLOSTERMANN ULRICH

DE37 patents

⚠️ This page may combine multiple inventors who share the name “KLOSTERMANN ULRICH”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

KLOSTERMANN ULRICH

QIMONDA AG

Electric device protection circuit and method for protecting an electric device

Integrated circuits; methods for manufacturing an integrated circuit and memory module

Integrated circuit, method of manufacturing an integrated circuit, and memory module

Integrated circuits; method for manufacturing an integrated circuit; method for decreasing the influence of magnetic fields; memory module

Integrated circuit having a magnetic tunnel junction device and method

Integrated circuit, memory cell array, memory module, and method of operating an integrated circuit

Integrated circuit, memory module, and method of manufacturing an integrated circuit

Magnetoresistive memory cell

Integrated circuit, cell arrangement, method of operating an integrated circuit, memory module

Magnetoresistive sensor with tunnel barrier and method

Integrated circuit, memory cell, memory module, method of operating an integrated circuit, and method of manufacturing a memory cell

Integrated circuits; methods for operating an integrating circuit; memory modules

Memory cell using spin induced switching effects

Magnetoresistive random access memory device with alternating liner magnetization orientation

Method and integrated circuit for determining the state of a resistivity changing memory cell

INFINEON TECHNOLOGIES AG

Memory structure and method of manufacture

System and method for controlling constant power dissipation

MRAM with vertical storage element in two layer-arrangement and field sensor

Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cell

Magnetoresistive sensor element for sensing a magnetic field

MRAM memory cell with a reference layer and method for fabricating

Adiabatic rotational switching memory element including a ferromagnetic decoupling layer

Method for homogeneously magnetizing an exchange-coupled layer system of a digital magnetic memory location device

MRAM structure using sacrificial layer for anti-ferromagnet and method of manufacture

MRAM memory cell having a weak intrinsic anisotropic storage layer and method of producing the same

ALTIS SEMICONDUCTOR SNC

MRAM with magnetic via for storage of information and field sensor

Memory having cap structure for magnetoresistive junction and method for structuring the same

Magnetic memory with static magnetic offset field

IBM

Magnetic tunnel junction cap structure and method for forming the same

Magnetic tunnel junctions for MRAM devices

INFINEON TECHNOLOGIES CORP

Field ramp down for pinned synthetic antiferromagnet

Techniques for reducing Neel coupling in toggle switching semiconductor devices

PARK HUMAN

Condensed memory cell structure using a FinFET

LEUSCHNER RAINER

MRAM device structure employing thermally-assisted write operations and thermally-unassisted self-referencing operations

ANDRES DIETER

Integrated circuit

SYNOPSYS INC

Inclusion of stochastic behavior in source mask optimization

KLOSTERMANN ULRICH

Integrated circuit including doped semiconductor line having conductive cladding