Inventor
MAZZOLA MICHAEL S
US25 patents
⚠️ This page may combine multiple inventors who share the name “MAZZOLA MICHAEL S”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SEMISOUTH LAB INC
5 patentsUS7416929B2Aug 26, 2008
Monolithic vertical junction field effect transistor and schottky barrier diode fabricated from silicon carbide and method for fabricating the same
SEMISOUTH LAB INC42 citations91
US7907001B2Mar 15, 2011
Half-bridge circuits employing normally on switches and methods of preventing unintended current flow therein
SEMISOUTH LAB INC12 citations90
US7602228B2Oct 13, 2009
Half-bridge circuits employing normally on switches and methods of preventing unintended current flow therein
SEMISOUTH LAB INC20 citations86
US7638379B2Dec 29, 2009
Vertical-channel junction field-effect transistors having buried gates and methods of making
SEMISOUTH LAB INC16 citations84
US7821015B2Oct 26, 2010
Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy
SEMISOUTH LAB INC5 citations73
MAZZOLA MICHAEL S
5 patentsUS8455328B2Jun 4, 2013
Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
MAZZOLA MICHAEL S9 citations83
US8193537B2Jun 5, 2012
Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
MAZZOLA MICHAEL S6 citations83
US8456218B2Jun 4, 2013
Half-bridge circuits employing normally on switches and methods of preventing unintended current flow therein
MAZZOLA MICHAEL S5 citations81
US8592826B2Nov 26, 2013
Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy
MAZZOLA MICHAEL S1 citations62
US8183124B2May 22, 2012
Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy
MAZZOLA MICHAEL S2 citations62
UNIV MISSISSIPPI
3 patentsUS7499290B1Mar 3, 2009
Power conversion
UNIV MISSISSIPPI63 citations96
US7294860B2Nov 13, 2007
Monolithic vertical junction field effect transistor and Schottky barrier diode fabricated from silicon carbide and method for fabricating the same
UNIV MISSISSIPPI33 citations92
US6410396B1Jun 25, 2002
Silicon carbide: germanium (SiC:Ge) heterojunction bipolar transistor; a new semiconductor transistor for high-speed, high-power applications
UNIV MISSISSIPPI27 citations91
POWER INTEGRATIONS INC
3 patentsUS8853710B2Oct 7, 2014
Optically controlled silicon carbide and related wide-bandgap transistors and thyristors
POWER INTEGRATIONS INC5 citations84
US8384182B2Feb 26, 2013
Junction barrier schottky rectifiers having epitaxially grown P+-N methods of making
POWER INTEGRATIONS INC9 citations84
US8860494B2Oct 14, 2014
Half-bridge circuits employing normally on switches and methods of preventing unintended current flow therein
POWER INTEGRATIONS INC1 citations56
FEDEX CORP SERVICES INC
3 patentsUS10761538B2Sep 1, 2020
Systems and methods for enhanced collision avoidance on logistics ground support equipment using multi-sensor detection fusion
FEDEX CORP SERVICES INC15 citations77
US11747820B2Sep 5, 2023
Enhanced systems, apparatus, and method for improved automated and autonomous operation of logistics ground support equipment
FEDEX CORP SERVICES INC0 citations57
US11157011B2Oct 26, 2021
Enhanced systems, apparatus, and methods for improved automated and autonomous operation of logistics ground support equipment
FEDEX CORP SERVICES INC1 citations57
MISSISSIPPI STATE UNIVERSITY R
2 patentsUS6767783B2Jul 27, 2004
Self-aligned transistor and diode topologies in silicon carbide through the use of selective epitaxy or selective implantation
MISSISSIPPI STATE UNIVERSITY R89 citations93
US6503782B2Jan 7, 2003
Complementary accumulation-mode JFET integrated circuit topology using wide (>2eV) bandgap semiconductors
MISSISSIPPI STATE UNIVERSITY R55 citations91