Inventor

WANG YU-REN

TW112 patents

⚠️ This page may combine multiple inventors who share the name “WANG YU-REN”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

WANG YU-REN

UNITED MICROELECTRONICS CORP

Method for filling gaps of semiconductor device and semiconductor device formed by the same

Semiconductor device and method for fabricating the same

FinFET device on silicon-on-insulator and method of forming the same

Field-effect transistor and method of making the same

Transistor with SiCN/SiOCN mulitlayer spacer

Nanowire and method of fabricating the same

Method of manufacturing metal-oxide-semiconductor transistor

Method for fabricating shallow trench isolation structure

Method of fabricating nitrogen-containing gate dielectric layer and semiconductor device

Method of manufacturing metal-oxide-semiconductor transistor

Method of removing a hard mask layer on a gate structure while forming a protective layer on the surface of a substrate

Semiconductor structure and manufacturing method thereof

Semiconductor device and method for fabricating the same

Method for filling gaps of semiconductor device and semiconductor device formed by the same

Manufacturing method of semiconductor structure

Semiconductor device and method for fabricating the same

Semiconductor device and method for fabricating the same

Method for manufacturing transistor with SiCN/SiOCN multilayer spacer

Method of manufacturing metal-oxide-semiconductor transistor

Semiconductor device with strain relaxed layer

Manufacturing method of semiconductor structure

Semiconductor device and manufacturing method thereof

Semiconductor device and fabrication method thereof

Method of forming semiconductor device having wick structure

Method for forming semiconductor device

Fabricating method of fin field effect transistor (FinFET)

Method of fabricating semiconductor structure using planarization process and cleaning process

Semiconductor device having the insulating layers cover a bottom portion of the fin shaped structure

Method of forming multilayer hard mask with treatment for removing impurities and forming dangling bonds

Method of forming patterned hard mask layer

Semiconductor process

Method of forming semiconductor device

Semiconductor device having epitaxial structure

Method for fabricating semiconductor device

High electron mobility transistor

Semiconductor structure

High electron mobility transistor and method of forming the same

Semiconductor device and method for fabricating the same

Semiconductor device with strain relaxed layer

Semiconductor device with strain relaxed layer

Semiconductor device with strain relaxed layer

Method for forming semiconductor device

Semiconductor device and fabrication method thereof

Semiconductor device and method for fabricating the same

High electron mobility transistor and fabrication method thereof

Wang shao-wei

Manufacturing method for metal gate using ion implantation

Method for fabricating silicon dioxide layer

LIN CHIEN-LIANG

Semiconductor process

LU TSUO-WEN

Method for fabricating MOS transistor

WANG YU-REN

Manufacturing method for semiconductor device having metal gate