Inventor
HORSKY THOMAS N
US45 patents
⚠️ This page may combine multiple inventors who share the name “HORSKY THOMAS N”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SEMEQUIP INC
21 patentsUS6452338B1Sep 17, 2002
Electron beam ion source with integral low-temperature vaporizer
SEMEQUIP INC151 citations99
US6686595B2Feb 3, 2004
Electron impact ion source
SEMEQUIP INC77 citations98
US6744214B2Jun 1, 2004
Electron beam ion source with integral low-temperature vaporizer
SEMEQUIP INC44 citations96
US7629590B2Dec 8, 2009
Method and apparatus for extending equipment uptime in ion implantation
SEMEQUIP INC41 citations95
US7609003B2Oct 27, 2009
Ion implantation system and control method
SEMEQUIP INC43 citations95
US7064491B2Jun 20, 2006
Ion implantation system and control method
SEMEQUIP INC40 citations95
US7838842B2Nov 23, 2010
Dual mode ion source for ion implantation
SEMEQUIP INC17 citations93
US7834554B2Nov 16, 2010
Dual mode ion source for ion implantation
SEMEQUIP INC20 citations93
US7023138B2Apr 4, 2006
Electron impact ion source
SEMEQUIP INC11 citations93
US7960709B2Jun 14, 2011
Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions
SEMEQUIP INC18 citations92
US7820981B2Oct 26, 2010
Method and apparatus for extending equipment uptime in ion implantation
SEMEQUIP INC30 citations92
US7723700B2May 25, 2010
Controlling the flow of vapors sublimated from solids
SEMEQUIP INC20 citations92
US7666771B2Feb 23, 2010
System and method for the manufacture of semiconductor devices by the implantation of carbon clusters
SEMEQUIP INC30 citations92
US7491953B2Feb 17, 2009
Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions
SEMEQUIP INC25 citations92
US7838850B2Nov 23, 2010
External cathode ion source
SEMEQUIP INC24 citations90
US7791047B2Sep 7, 2010
Method and apparatus for extracting ions from an ion source for use in ion implantation
SEMEQUIP INC17 citations90
US7919402B2Apr 5, 2011
Cluster ion implantation for defect engineering
SEMEQUIP INC25 citations89
US7928406B2Apr 19, 2011
Method and system for extracting ion beams composed of molecular ions (cluster ion beam extraction system)
SEMEQUIP INC8 citations84
US7394202B2Jul 1, 2008
Ion implantation system and control method
SEMEQUIP INC12 citations83
US8368309B2Feb 5, 2013
Method and apparatus for extracting ions from an ion source for use in ion implantation
SEMEQUIP INC6 citations82
US7528550B2May 5, 2009
Ion implantation system and control method
SEMEQUIP INC3 citations61
HORSKY THOMAS N
5 patentsUS8071958B2Dec 6, 2011
Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions
HORSKY THOMAS N11 citations92
US8618514B2Dec 31, 2013
Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions
HORSKY THOMAS N5 citations83
US8410459B2Apr 2, 2013
Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ions
HORSKY THOMAS N3 citations73
US8330118B2Dec 11, 2012
Multi mode ion source
HORSKY THOMAS N1 citations51
US8586459B2Nov 19, 2013
Ion implantation with molecular ions containing phosphorus and arsenic
HORSKY THOMAS N0 citations38
EATON CORP
4 patentsUS5497006AMar 5, 1996
Ion generating source for use in an ion implanter
EATON CORP167 citations97
US6107634AAug 22, 2000
Decaborane vaporizer
EATON CORP75 citations96
US5703372ADec 30, 1997
Endcap for indirectly heated cathode of ion source
EATON CORP60 citations94
US5763890AJun 9, 1998
Cathode mounting for ion source with indirectly heated cathode
EATON CORP46 citations91
AXCELIS TECH INC
4 patentsUS6288403B1Sep 11, 2001
Decaborane ionizer
AXCELIS TECH INC89 citations96
US6768121B2Jul 27, 2004
Ion source having replaceable and sputterable solid source material
AXCELIS TECH INC59 citations95
US6958481B2Oct 25, 2005
Decaborane ion source
AXCELIS TECH INC27 citations91
US6583544B1Jun 24, 2003
Ion source having replaceable and sputterable solid source material
AXCELIS TECH INC44 citations91
KRULL WADE A
2 patentsUS8097529B2Jan 17, 2012
System and method for the manufacture of semiconductor devices by the implantation of carbon clusters
KRULL WADE A103 citations97
US8530343B2Sep 10, 2013
System and method for the manufacture of semiconductor devices by the implantation of carbon clusters
KRULL WADE A4 citations72
OPTRON SYSTEMS INC
2 patentsGLAVISH HILTON F
2 patentsNISSIN ION EQUIPMENT CO LTD
2 patentsUS9865422B2Jan 9, 2018
Plasma generator with at least one non-metallic component
NISSIN ION EQUIPMENT CO LTD3 citations73
US8994272B2Mar 31, 2015
Ion source having at least one electron gun comprising a gas inlet and a plasma region defined by an anode and a ground element thereof
NISSIN ION EQUIPMENT CO LTD5 citations73