Inventor
TSUI REGAN S
US2 patents
Patents
2 patentsUS6716719B2Apr 6, 2004
Method of forming biasable isolation regions using epitaxially grown silicon between the isolation regions
MICRON TECHNOLOGY INC25 citations89
US6919612B2Jul 19, 2005
Biasable isolation regions using epitaxially grown silicon between the isolation regions
MICRON TECHNOLOGY INC3 citations60