Inventor
YOO MIN SOO
KR21 patents
⚠️ This page may combine multiple inventors who share the name “YOO MIN SOO”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.
SK HYNIX INC
14 patentsUS9356029B2May 31, 2016
Semiconductor device having buried gate, method of fabricating the same, and module and system having the same
SK HYNIX INC9 citations83
US9064956B2Jun 23, 2015
Semiconductor device having buried gate, method of fabricating the same, and module and system having the same
SK HYNIX INC8 citations83
US9455329B2Sep 27, 2016
Junctionless semiconductor device having buried gate, apparatus including the same, and method for manufacturing the semiconductor device
SK HYNIX INC5 citations81
US10964794B2Mar 30, 2021
Cryogenic semiconductor device having buried channel array transistor
SK HYNIX INC4 citations73
US9768176B2Sep 19, 2017
Semiconductor device and method for forming the same
SK HYNIX INC3 citations72
US9608106B2Mar 28, 2017
Semiconductor device and method for forming the same
SK HYNIX INC1 citations62
US9368399B2Jun 14, 2016
Semiconductor device and method for forming the same
SK HYNIX INC2 citations62
US9337308B2May 10, 2016
Semiconductor device and method for forming the same
SK HYNIX INC0 citations51
US9177958B2Nov 3, 2015
Vertical semiconductor device, module and system each including the same, and method for manufacturing the vertical semiconductor device
SK HYNIX INC1 citations51
US8878285B2Nov 4, 2014
Vertical semiconductor device, module and system each including the same, and method for manufacturing the vertical semiconductor device
SK HYNIX INC0 citations51
US8923035B2Dec 30, 2014
Junctionless semiconductor device having buried gate, apparatus including the same, and method for manufacturing the semiconductor device
SK HYNIX INC1 citations49
US11887656B2Jan 30, 2024
Memory for improving efficiency of error correction
SK HYNIX INC0 citations48
US9673107B2Jun 6, 2017
Semiconductor device with buried metal layer
SK HYNIX INC0 citations48
US9263448B2Feb 16, 2016
Semiconductor device with buried metal layer
SK HYNIX INC0 citations48
HYNIX SEMICONDUCTOR INC
4 patentsUS8004048B2Aug 23, 2011
Semiconductor device having a buried gate that can realize a reduction in gate-induced drain leakage (GIDL) and method for manufacturing the same
HYNIX SEMICONDUCTOR INC7 citations83
US7927962B2Apr 19, 2011
Semiconductor device having buried insulation films and method of manufacturing the same
HYNIX SEMICONDUCTOR INC10 citations83
US7102187B2Sep 5, 2006
Gate structure of a semiconductor device
HYNIX SEMICONDUCTOR INC12 citations83
US7378307B2May 27, 2008
Gate of a semiconductor device and method for forming the same
HYNIX SEMICONDUCTOR INC0 citations51